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DS1345AB价格
参考价格：￥115.7162
型号：DS1345ABP-70+ 品牌：Maxim 备注：这里有DS1345AB多少钱，2024年最近7天走势，今日出价，今日竞价，DS1345AB批发/采购报价，DS1345AB行情走势销售排行榜，DS1345AB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1345AB | 1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 |  |   |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit | Dallas Dallas Semiconductor Corp. |  | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNVSRAMsare1,048,576-bit,fullystatic,NVSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchaconditionoccurs,theli | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAMwithBatteryMonitor DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit | Dallas Dallas Semiconductor Corp. | | | |
封装/外壳：34-PowerCap™ 模块 包装：管件 描述：IC NVSRAM 1MBIT PAR 34PWRCAP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
封装/外壳：34-PowerCap™ 模块 包装：管件 描述：IC NVSRAM 1MBIT PAR 34PWRCAP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
1024kNonvolatileSRAMwithBatteryMonitor 文件：193.36 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAMwithBatteryMonitor 文件：193.36 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1345-TypeReceiverwithClockRecoveryandDataRetiming Description The1345-Typefiber-opticreceiverisdesignedforuseintransmissionsystemsormedium-tohighspeeddatacommunicationapplications.Usedinintermediate-andlong-reachapplications,thereceiveroperatesattheSONETOC-3orOC-12datarateaswellastheITU-Tsynchronousdig | agere 杰尔 |  | | |
1345-TypeReceiverwithClockRecoveryandDataRetiming Description The1345-Typefiber-opticreceiverisdesignedforuseintransmissionsystemsormedium-tohighspeeddatacommunicationapplications.Usedinintermediate-andlong-reachapplications,thereceiveroperatesattheSONETOC-3orOC-12datarateaswellastheITU-Tsynchronousdig | agere 杰尔 | | | |
1345-TypeReceiverwithClockRecoveryandDataRetiming Description The1345-Typefiber-opticreceiverisdesignedforuseintransmissionsystemsormedium-tohighspeeddatacommunicationapplications.Usedinintermediate-andlong-reachapplications,thereceiveroperatesattheSONETOC-3orOC-12datarateaswellastheITU-Tsynchronousdig | agere 杰尔 | | | |
1345-TypeReceiverwithClockRecoveryandDataRetiming Description The1345-Typefiber-opticreceiverisdesignedforuseintransmissionsystemsormedium-tohighspeeddatacommunicationapplications.Usedinintermediate-andlong-reachapplications,thereceiveroperatesattheSONETOC-3orOC-12datarateaswellastheITU-Tsynchronousdig | agere 杰尔 | | | |
3M??EMI/EMCElectronicMaterials 文件：4.87064 Mbytes Page：12 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |  | |
DS1345AB产品属性
- 类型
描述
- 型号
DS1345AB
- 制造商
MAXIM
- 制造商全称
Maxim Integrated Products
- 功能描述
1024k Nonvolatile SRAM with Battery Monitor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Maxim |
21+ |
34PowerCap Module |
13880 |
公司只售原装,支持实单 |
|||
DALLAS |
23+ |
34-PCM |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
MAXIM |
23+ |
PWRCP |
8888 |
专做原装正品,假一罚百! |
|||
DALLAS |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
DALLAS |
22+ |
34-PCM |
3200 |
绝对进口原装现货 |
|||
DALLAS |
22+ |
34-PCM |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
DALLAS |
02+ |
34/pwrcap |
217 |
原装现货海量库存欢迎咨询 |
|||
DALLAS |
23+ |
PWRCP |
65480 |
||||
DALLAS |
05+ |
34/pwrcap |
210 |
自己公司全新库存绝对有货 |
|||
DALLAS |
02+ |
34pwrcap |
217 |
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DS1345AB规格书下载地址
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