3-PHASEHALF-BRIDGEGATEDRIVERINSO28

Features •ThreeFloatingHigh-SideDriversinBootstrapOperationto100V •200mASource/350mASinkOutputCurrentCapability •OutputsToleranttoNegativeTransients,dV/dtImmune •LogicInput3.3VCapability •InternalDeadtimeof290nstoProtectMOSFETsandIGBTs •MatchedPropDela

3-PHASEHALF-BRIDGEGATEDRIVERINSO28

Features •ThreeFloatingHigh-SideDriversinBootstrapOperationto100V •200mASource/350mASinkOutputCurrentCapability •OutputsToleranttoNegativeTransients,dV/dtImmune •LogicInput3.3VCapability •InternalDeadtimeof290nstoProtectMOSFETsandIGBTs •MatchedPropDela

包装：管件 描述：IC GATE DRVR HALF-BRIDGE 28SOIC 集成电路（IC） 栅极驱动器

封装/外壳：28-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 28SO 集成电路（IC） 栅极驱动器

SchottkyBarrierDiode(TwinType쨌CathodeCommon)160V,5ARectifier

160V,5ARectifier Features •Tj=150°C. •Lowforwardvoltage(VFmax=0.80V). •Shortreverserecoverytime. •Lowswitchingnoise. •Highreliabilityduetoplanarstructure. •AttachmentworkabilityisgoodbyMica-lesspackage. Applications •Highfrequencyrectification(switchingreg

CascadableSiliconBipolarMMICAmplifiers

[HP] Description TheMSA-0635isahighperformancesiliconbipolarMonolithicMicrowaveIntegratedCircuit(MMIC)housedinacosteffective,microstrippackage.ThisMMICisdesignedforuseasageneralpurpose50Ωgainblock.TypicalapplicationsincludenarrowandbroadbandIFandRFampl

ForLEADTYPE

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Sensor

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