High-currentGainMediumPowerTransistor(20V,0.5A)

Features 1)HighDCcurrentgain. hFE=1200(Typ.) 2)Highemitter-basevoltage. VEBO=12V(Min.) 3)LowVCE(sat). VCE(sat)=0.18V(Typ.) (IC/IB=500mA/20mA)

CustomerSpecifications

Construction 1)Conductor a)MaterialTinnedCopper,perASTMB-33andCID-A-A-59551 b)StrandingSolid c)Diameter0.0063 2)BraidData a)NominalID3/8 b)AWGofEnds34 c)NumberofCarriers24 d)NominalPercentCoverage90 e)TotalNumberofEnds192 f)Approx.Equiv.AWG11 g)Ap

MOSFETN-CHANNELENHANCEMENTMODE

DESCRIPTION AM2144 isavailableinaTO-220package. FEATURES 40V/120A, R DS(ON)ON)=1.9mΩ(max.)@VGS=10V 100UIS+RgTested ReliableandRugged LowerRDS(ON)toMinimizeConductionLosses AvailableinaTO-220package APPLICATION SMPSSynchronousRectificatio

FlexCableforRaspberryPiCamera-2meters

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iscN-ChannelMOSFETTransistor

文件：297.16 Kbytes Page：2 Pages

IscN-ChannelMOSFETTransistor

文件：321.24 Kbytes Page：2 Pages