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Silicon Diffused Power Transistor(GENERAL DESCRIPTION)

GENERALDESCRIPTION Highvoltage,high-speedswitchingnpntransistorsinaplasticenvelopewithintegratedefficiencydiode,primarilyforuseinhorizontaldeflectioncircuitesofcolourtelevisionreceivers

60V/3A Low-Frequency Power Amplifier Applications

60V/3ALow-FrequencyPowerAmplifierApplications Applications •Generalpoweramplifier. Features •WideASO(AdoptionofMBITprocess). •Lowsaturationvoltage. •Highreliability. •Highbreakdownvoltage. •Micalesspackagefacilitatingmounting.

Power Transistor (-80V, -4A)

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

High-current gain Power Transistor (-60V, -3A)

2SB1639(-60V,-3A) 2SD2318,2SD1944(60V,3A) HighDCcurrentgain.

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The2SD1950isdesignedforgeneral-purposeapplicationsrequiringHighDCCurrentGain. Thisissuitableforallkindofdrivingormuting. FEATURES ●HighDCCurrentGainandGoodhFElinearity. hFE=800to3200(VCE=5.0V,IC=1.0A) ●LowCollectorSaturationVoltage.

HIGH RELIABILITY FOR LOW COST

FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR

HIGH RELIABILITY FOR LOW COST

FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR

HIGH RELIABILITY FOR LOW COST

FEATURES -HIGHRELIABILITYFORLOWCOST -WIDEFREQUENCYRANGE -EXCELLENTATTENUATIONBEHAVIOUR

Fast Hard Drive Diode

FastHardDriveDiode

High DC blocking stability

KeyParameters   VRRM4500V   IFAVM1830A(TC=85°C)   IFSM3570A(T40000AC=55°C)   VT01,25V   rT0,5mΩ   RthJC7,5K/kW   ClampingForce36…52kN   Max.Diameter121mm   ContactDiameter86mm   Height26mm Features •Fullblockingcapability50/60Hzoverawide

Silicon NPN triple diffusion planar type(For power amplification)

Forpoweramplification Complementaryto2SB1393and2SB1393A ■Features ●HighforwardcurrenttransferratiohFEwhichhassatisfactorylinearity ●LowcollectortoemittersaturationvoltageVCE(sat) ●Full-packpackagewhichcanbeinstalledtotheheatsinkwithonescrew

SERIAL I/O CALENDAR & CLOCK CMOS LSI

SERIALI/OCALENDAR&CLOCKCMOSLSI TheμPD1990ACisaCMOSintegratedcircuithavingaclockfunction,whichhasbeendesignedwiththeintentofconnectingtomicrocomputer.

Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)

Forlow-frequencypoweramplificationanddriveramplification Complementaryto2SB1322A ■Features •LowcollectortoemittersaturationvoltageVCE(sat) •Outputof2Wto3Wisobtainedwithacomplementarypairwith2SB1322A •Allowingsupplywiththeradialtaping

Power Transistor (160V , 1.5A)

文件：149.66 Kbytes Page：3 Pages

Control/Communicators

文件：45.7 Kbytes Page：8 Pages

Control/Communicators

文件：45.7 Kbytes Page：8 Pages

Silicon NPN Power Transistors

文件：114 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：205.12 Kbytes Page：4 Pages

包装：散装 描述：SHELF VENTED TOOL-LESS 盒子，外壳，机架 机架组件

Directional Coupler 50廓 1420 to 1660 MHz

文件：271.19 Kbytes Page：1 Pages

Directional Coupler

文件：283.95 Kbytes Page：3 Pages

Directional Coupler

文件：283.95 Kbytes Page：3 Pages