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CY14B104L价格
参考价格:¥209.0283
型号:CY14B104LA-BA25XI 品牌:CYPRESS 备注:这里有CY14B104L多少钱,2024年最近7天走势,今日出价,今日竞价,CY14B104L批发/采购报价,CY14B104L行情走势销售排行榜,CY14B104L报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
CY14B104L | 4-Mbit(512Kx8/256Kx16)nvSRAM 文件:415.19 Kbytes Page:21 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | ||
CY14B104L | 4-Mbit(512Kx8/256Kx16)nvSRAM 文件:664.19 Kbytes Page:22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | ||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM 文件:664.19 Kbytes Page:22 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4Mbit(512Kx8/256Kx16)nvSRAM 文件:797.79 Kbytes Page:25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件:961.93 Kbytes Page:25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:991.18 Kbytes Page:24 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件:961.93 Kbytes Page:25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:977.41 Kbytes Page:26 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:991.18 Kbytes Page:24 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件:961.93 Kbytes Page:25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:977.41 Kbytes Page:26 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:977.41 Kbytes Page:26 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:991.18 Kbytes Page:24 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件:961.93 Kbytes Page:25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路(IC) 存储器 | CYP Cypress Semiconductor Corp | |||
封装/外壳:48-TFBGA 包装:卷带(TR) 描述:IC NVSRAM 4MBIT PARALLEL 48FBGA 集成电路(IC) 存储器 | CYP Cypress Semiconductor Corp | |||
4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件:961.93 Kbytes Page:25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:991.18 Kbytes Page:24 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:977.41 Kbytes Page:26 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:977.41 Kbytes Page:26 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件:961.93 Kbytes Page:25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:991.18 Kbytes Page:24 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:991.18 Kbytes Page:24 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512K횞8/256K횞16)nvSRAM 文件:977.41 Kbytes Page:26 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 | |||
4-Mbit(512Kx8/256Kx16)nvSRAM20ns,25ns,and45nsaccesstimes 文件:961.93 Kbytes Page:25 Pages | CypressCypressSemiconductor 赛普拉斯赛普拉斯半导体公司 |
CY14B104L产品属性
- 类型
描述
- 型号
CY14B104L
- 制造商
CYPRESS
- 制造商全称
Cypress Semiconductor
- 功能描述
4-Mbit(512K x 8/256K x 16) nvSRAM
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CYPRESS/赛普拉斯 |
2122+ |
BGA |
9890 |
全新原装进口,优势渠道,价格美丽,可出样品来电咨询 |
|||
SPANSION(飞索) |
1921+ |
TSOPII-44 |
3575 |
向鸿仓库现货,优势绝对的原装! |
|||
CYPRRESS |
19+ |
TSOP44 |
13620 |
||||
CYPRESS/赛普拉斯 |
22+ |
TSOP |
12356 |
只做全新原装正品货 |
|||
CYPRESS/赛普拉斯 |
2022+ |
BGA |
57550 |
||||
CYPRESS/赛普拉斯 |
2019+ |
BGA |
7200 |
原装正品现货,可开13点税 |
|||
Cypress |
21+ |
44TSOP II |
13880 |
公司只售原装,支持实单 |
|||
CYPRESS/赛普拉斯 |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
CYPRESS |
22+23+ |
BGA |
20867 |
绝对原装正品全新进口深圳现货 |
|||
CYPRESS |
23+ |
TSOP2-44 |
20000 |
CY14B104L规格书下载地址
CY14B104L参数引脚图相关
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CY14B104L数据表相关新闻
CXB3590-0000-000N0YAD32Q
產品:WhiteCoBLEDs 安裝風格:SMD/SMT 封裝/外殼:COB-Chip-on-Board 照明色彩:WarmWhite 波長/色溫:3200K 發光強度:- 光通量/輻射通量:9000lm 顯色指數-CRI:93 視角:115deg If-順向電流:2.4A Vf-順向電壓:36V 額定功率:- 長度:34.85mm 寬度:34.85mm 高度:1.7
2020-12-21CY15B108QN-40LPXI
CY15B108QN-40LPXI
2020-11-30CY2071ASC-198 原装正品 贸泽微优势供应
CY2071ASC-198原装正品贸泽微优势供应
2020-11-3CY10C680J,CY10C6R2J,CY10C750J,CY10C820J,CY10C910J
CY10C680J,CY10C6R2J,CY10C750J,CY10C820J,CY10C910J
2020-4-1CXD2163BR
CXD2163BR,全新原装当天发货或门市自取0755-82732291.
2019-12-31CY14B108N-BA25XI进口原装,主营军工级IC
CY14B108N-BA25XIXILINX(赛灵思),ALTERA(阿尔特拉),军工级IC专业优势渠道
2019-10-18
DdatasheetPDF页码索引
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