位置：首页 > IC中文资料 > CEU07N65SA
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU07N65SA | N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,6.2A,RDS(ON)=0.65W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  |   |
MOSFET650V,7AN-CHANNEL FEATURE •RoHSCompliant •RDS(ON),typ.=1.2Ω@VGS=10V •LowGateChargeMinimizeSwitchingLoss •FastRecoveryBodyDiode DESCRIPTION TheAM07N65isavailableinTO220FPackage. APPLICATION •Adaptor •Charger •SMPSStandbyPower | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.17868 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
TO-252 |
8000 |
正品原装--自家现货-实单可谈 |
||||
CET/華瑞 |
2048+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
CET |
1822+ |
TO-252 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
WESTERN DIGITAL |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
CET |
21+ |
TO-252 |
65200 |
一级代理/放心采购 |
|||
CET/華瑞 |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
|||
CET |
21+ |
TO-252 |
21300 |
原装现货假一赔十 |
|||
C |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET |
24+ |
TO-252 |
90000 |
进口原装现货假一罚十价格合理 |
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DdatasheetPDF页码索引
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