型号 功能描述 生产厂家&企业 LOGO 操作
CEU04N6

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■600V,3.4A,RDS(ON)=2.4Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CEU04N6

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,3.4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CEU04N6

N-ChannelMOSFETusesadvancedtrenchtechnology

文件:1.5619 Mbytes Page:5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 650V,3.2A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■650V,3.2A,RDS(ON)=2.8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 700V@TJmax,3.1A,RDS(ON)=2.8W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

N-ChannelMOSFETusesadvancedtrenchtechnology

文件:1.28974 Mbytes Page:5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES 600V,2.5A,RDS(ON)=2.5Ω@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandlingcapability. TO-220Ffull-pakforthroughhole

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 600V,3.4A,RDS(ON)=2.4W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES 600V,2.5A,RDS(ON)=2.5Ω@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandlingcapability. TO-220Ffull-pakforthroughhole

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

文件:827.09 Kbytes Page:4 Pages

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
更新时间:2024-5-28 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
21+
TO-252
35200
一级代理/放心采购
CET/華瑞
21+ROHS
TO-252
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET
23+
TO-252
5000
专注配单,只做原装进口现货
CET/華瑞
2048+
SOT-252
9852
只做原装正品现货!或订货假一赔十!
CET/华瑞
2020+
TO-252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
CET/華瑞
23+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票
CET
15+
TO-252
20000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET
15+PBF
TO-252
20000
现货
CET
22+
TO-252
32350
原装正品 假一罚十 公司现货
C
23+
TO252-2
6000
原装正品,支持实单

CEU04N6芯片相关品牌

  • ANAREN
  • CDE
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  • COPAL
  • Cypress
  • freescale
  • ILSI
  • NKK
  • OPTOWAY
  • Philips
  • WALSIN
  • WURTH

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