位置：首页 > IC中文资料第7613页 > CEU02N7G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU02N7G | N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   |
CEU02N7G | N-ChannelEnhancementModeFieldEffectTransistor FEATURES 700V,1.6A,RDS(ON)=6.75W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | |
CEU02N7G | N-ChannelMOSFETusesadvancedtrenchtechnology 文件：892.2 Kbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■720V,1.6A,RDS(ON)=6.75Ω@VGS=10V. 750V@Tc=150°C ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 720V,1.6A,RDS(ON)=6.75W@VGS=10V. 750V@Tc=150C SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■700V,1.6A,RDS(ON)=6.6Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■700V,1.6A,RDS(ON)=6.75Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
CEU02N7G产品属性
- 类型
描述
- 型号
CEU02N7G
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
07+ |
TO-251 |
27000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
23+24 |
TO-252 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
CET |
21+ |
TO-251 |
27000 |
原装现货假一赔十 |
|||
utc |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
CET |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
CET/華瑞 |
TO-251 |
265209 |
假一罚十原包原标签常备现货! |
||||
CET |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
CET |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
|||
CET |
2020+ |
TO-252 |
50720 |
公司代理品牌,原装现货超低价清仓! |
|||
CET/華瑞 |
23+ |
NA/ |
30250 |
原装现货,当天可交货,原型号开票 |
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CEU02N7G规格书下载地址
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DdatasheetPDF页码索引
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