| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU01N6A | N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  |   |
InductiveSensors BES517-398-NO-C-05 Basicfeatures Approval/ConformityCE UKCA cULus WEEE BasicstandardIEC60947-5-2 | BalluffBalluff Korea Ltd. 巴鲁夫巴鲁夫自动化（上海）有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.1A,RDS(ON)=12W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：85.87 Kbytes Page：4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
infineon |
2023+ |
TO-252 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VBSEMI |
19+ |
TO252-2 |
29600 |
绝对原装现货,价格优势! |
|||
VB |
2019 |
TO252-2 |
55000 |
绝对原装正品假一罚十! |
|||
CET/華瑞 |
2325+ |
TO-252 |
33000 |
无敌价格 主销品牌 正规渠道订货 免费送样!!! |
|||
CET/華瑞 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
CET/華瑞 |
2022+ |
TO-252 |
79999 |
||||
CET |
2020+ |
TO-252 |
51650 |
公司代理品牌,原装现货超低价清仓! |
|||
C |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
美格纳 |
23+ |
DPAK |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET |
2023+ |
TO-252 |
16800 |
芯为只有原装,公司现货 |
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CEU01N6A规格书下载地址
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DdatasheetPDF页码索引
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