N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■60V,80A,RDS(ON)=9.0mΩ@VGS=10V. RDS(ON)=12.0mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ■60V,80A,RDS(ON)=9.0mΩ@VGS=10V. RDS(ON)=12.0mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package.

AlternateActionandMomentaryPushbuttonSwitches

Features/Benefits •Longtravel •AvailablewithLED •Longlifecontactdesign •Epoxyterminalseal compatabilewithbottomwashcleaning •RoHScompliantmodels available TypicalApplications •Instrumentation •Computersandperipherals •Telecommunicationsand networkingequipme

LowDropTypeNegativeOutput.4VRegulatorwithResetPin

■Overview TheAN8060andtheAN8060Sarethelowdroptyperegulatorshavingthefunctionofresettingoutputvoltage.Withacomparatortosencereducedvoltagebuiltingitissuitableforbatteriesoperation. ■Features •Withresetfunction:biascurrentatresetting–5µA •Smallinput-ou

AlternateActionandMomentaryPushbuttonSwitches

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AlternateActionandMomentaryPushbuttonSwitches

文件：726.93 Kbytes Page：10 Pages

True-rmsMultimeter

文件：5.63044 Mbytes Page：140 Pages