N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,10A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,10A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

MicrophoneCable,1Conductor25AWG,TC

ProductDescription 25AWGstranded(7x33)compositecopperconductor,EPDMrubberinsulation,rayonbraid+TCbraidshield(80coverage),cottonserve,cottonserve, EPDMrubberjacket.

MALE/FEMALETHREADEDSTANDOFFS

[KEYSTONE] MALE/FEMALETHREADEDSTANDOFFS PC104MOUNTINGKITS NYLONSTANDOFFS

−2Vto70VWideInputVoltageRange,2.2MHzHighBandwidth,Current-SenseAmplifierwithPWMRejection

GENERALDESCRIPTION TheAD8410A1isahighvoltage,highbandwidthcurrent-sense amplifier.Thedevicefeaturesaninitialgainof20V/V,witha2.2 MHzbandwidthwithamaximum±0.13gainerrorovertheentire temperaturerange.Thebufferedoutputvoltagedirectlyinterfaces withanytypic

−2Vto70VWideInputVoltageRange,2.2MHzHighBandwidth,Current-SenseAmplifierwithPWMRejection

GENERALDESCRIPTION TheAD8410A1isahighvoltage,highbandwidthcurrent-sense amplifier.Thedevicefeaturesaninitialgainof20V/V,witha2.2 MHzbandwidthwithamaximum±0.13gainerrorovertheentire temperaturerange.Thebufferedoutputvoltagedirectlyinterfaces withanytypic

HighVoltage,HighBandwidthCurrentSenseAmplifier

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