N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired.

N-ChannelEnhancementModeFieldEffectTransistor

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N-ChannelEnhancementModeFieldEffectTransistor

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T-1SubminiatureLamps

T-1¼SubminiatureLamps

634MSeriesD-SubConnectors|MachinedPins|HighDensityThreeContactRowswith0.350(8.89mm)FootprintRightAngleBend|Receptacle

Features HighDensityThreeContactRowswith.350(8.89mm)FootprintRightAngleBendwithMachinedContacts .090(2.29mm)ContactSpacing0.078(1.98mm)RowSpacing PlugandReceptaclein15,26,44or62ContactSizes PinandSocketContactMatingDesignwithP.C.TailTermination M

20VComplementaryEnhancementModeFieldEffectTransistor

Description TheACE634combinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. Features •N-Channel   VDS(V)=20V   ID=4A   RDS(ON)      

LowFrequencies

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DCaxialfans

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