您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第1178页 > CED1

CED1价格

参考价格：￥0.0000

型号：CED1KB15RH 品牌：Russell 备注：这里有CED1多少钱，2024年最近7天走势，今日出价，今日竞价，CED1批发/采购报价，CED1行情走势销售排行榜，CED1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CED1010AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=14mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1010L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=13mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1012

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED1012L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■120V,10A,RDS(ON)=120mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED10P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-8A,RDS(ON)=350mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED110P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-92A,RDS(ON)=6.0mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.0mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1185

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V,3.4A,RDS(ON)=2.9W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1188SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 800V,6.8A,RDS(ON)=0.72W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED11N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V,8A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED11P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-7A,RDS(ON)=270mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED11P20

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -200V,-10.5A,RDS(ON)=0.36W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. ComparabletoAEC-Q101.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1210

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,62A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1210A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,53A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED12N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED12N10

N-Channel 100 V (D-S) MOSFET

FEATURES •DT-TrenchPowerMOSFET •175°CJunctionTemperature •100RgTested APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CED12N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,11A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED12N10L

N-Channel 100 V (D-S) MOSFET

FEATURES •DT-TrenchPowerMOSFET •175°CJunctionTemperature •100RgTested APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
CED12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-9A,RDS(ON)=315mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED12P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-9A,RDS(ON)=315mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED12P15

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V,-12A,RDS(ON)=0.24W@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1310S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,74A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1310SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,76A,RDS(ON)=8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=11.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED13N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED14G04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,125A,RDS(ON)=3.8mΩ@VGS=10V. RDS(ON)=6.8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED14N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,12A,RDS(ON)=100mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=140mW@VGS=6V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1588S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 850V@TJmax,11A,RDS(ON)=0.42W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED15N60LN

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V,13.6A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED15N60SA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V@TJmax,13.4A,RDS(ON)=0.28W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1610LA

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,36A,RDS(ON)=16.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=24mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED16N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED16N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED16N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED16N10SL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,12A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CET-MOS
CED1710

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,17A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED1Z

8-/6-/4-Channel DAS with 16-Bit,Bipolar Input,Simultaneous Sampling ADC

GENERALDESCRIPTION TheAD76061/AD7606-6/AD7606-4are16-bit,simultaneoussampling,analog-to-digitaldataacquisitionsystems(DAS)witheight,six,andfourchannels,respectively.Eachpartcontainsanaloginputclampprotection,asecond-orderantialiasingfilter,atrack-and-holdamplifier,

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
CED1Z

8-Channel DAS with 14-Bit, Bipolar Input, Simultaneous Sampling ADC

GENERALDESCRIPTION TheAD76071isa14-bit,simultaneoussampling,analog-to-digitaldataacquisitionsystem(DAS).Thepartcontainsanaloginputclampprotection;asecond-orderantialiasingfilter;atrackand-holdamplifier;a14-bitchargeredistribution,successiveapproximationanalog-to-

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
CED1185

N-Channel Enhancement Mode Field Effect Transistor

文件：651.5 Kbytes Page：4 Pages

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED12N10

N-Channel MOSFET uses advanced trench technology

文件：1.30558 Mbytes Page：4 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
CED12N10_08

N-Channel Enhancement Mode Field Effect Transistor

文件：416.48 Kbytes Page：4 Pages

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED12P10_08

P-Channel Enhancement Mode Field Effect Transistor

文件：263.94 Kbytes Page：4 Pages

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED13N07

N-Channel Enhancement Mode Field Effect Transistor

文件：173.2 Kbytes Page：4 Pages

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
CED16N10L

N-Channel MOSFET uses advanced trench technology

文件：1.33831 Mbytes Page：5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
CED1A151MCB6358

封装/外壳：径向，Can - SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ALUMINUM ELECTROLYTIC CAPACITORS 电容器 铝电解电容器

ELITE

Elite Enterprises (H.K.) Co., Ltd.

ELITE
CED1A221MCB6377

封装/外壳：径向，Can - SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ALUMINUM ELECTROLYTIC CAPACITORS 电容器 铝电解电容器

ELITE

Elite Enterprises (H.K.) Co., Ltd.

ELITE
CED1Z

8-Channel DAS with 18-Bit, Bipolar, Simultaneous Sampling ADC

文件：725.06 Kbytes Page：33 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
CED1Z

8-Channel Differential DAS

文件：878.55 Kbytes Page：37 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
CED1Z

8-Channel Differential DAS with 18-Bit

文件：799.95 Kbytes Page：36 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

CED1产品属性

  • 类型

    描述

  • 型号

    CED1

  • 制造商

    Arlington Industries

  • 功能描述

    Decora Insert White Reversable Cable Pass Through Wallplate

  • 制造商

    ARLINGTON INDUSTRIES

  • 功能描述

    CABLE PASS THROUGH WALLPLATE DECORA INSERT WHITE REVERSABLE

CED1供应商更多...

更新时间：2024-5-11 19:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市威雅利发展有限公司
CED1012
CET
07+
SOT-223
6560
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
瀚佳科技(深圳)有限公司
CED1012
CET
2020+
TO-251
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
易创佳业科技（深圳）有限公司
CED1012
C
23+
TO-251
6000
原装正品，支持实单
询价
深圳市科恒伟业电子有限公司
CED1012
CET/華瑞
21+
SOT-223
9852
只做原装正品现货!或订货假一赔十!
询价
深圳市维尔达电子有限公司
CED1012
CET
2023+
SOT-223
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市特顺芯科技有限公司
CED1057
02+
3
询价
深圳市凯斯宇科技有限公司
CED1057-20
2022
34
原厂原装正品,价格超越代理
询价
深圳市惊羽科技有限公司
CED1012L
CET
24+25+/26+27+
TO-251-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
贸泽芯城（深圳）电子科技有限公司
CED1012/CEU1012
CET/華瑞
21+ROHS
TO-251 TO-252
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市创新迹电子有限公司
CED1012
CET
23+
TO-251
7300
专注配单,只做原装进口现货
询价

CED1芯片相关品牌

  • CAMDENBOSS
  • HOLTIC
  • ISSI
  • JAE
  • Micrel
  • PEAK
  • pulse
  • SEMITECH
  • SEMTECH_ELEC
  • SPSEMI
  • UTC
  • YEASHIN

CED1规格书下载地址

CED1参数引脚图相关

CED1数据表相关新闻

  • CDT3345

    CDT3345

    2023-5-10

  • CE6232

    CE6232，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.

    2021-8-17

  • CEM-1212C

    CEM-1212C

    2021-8-3

  • CEM-1205C

    CEM-1205C KBS-13DB-4P-2 PKM17EPPH4001-BO 7BB-27-4C PKM17EWH4000 7BB-20-3CL0 7BB-27-3R5 7BB-35-3CL0 7BB-50M-1 PKM24SP-3805 1.30.078.001/0100 1.30.249.002/0000 MSS300R AST1240MLQ MSE14LSU2 PK-27A35WQ PK-27N36WQ PT-1540PQ PT-4175WQ SC250M SW360308-1 SW380408-1 SW230704-1 SW390608

    2021-4-27

  • CEM9435

    CEM9435，全新原装当天发货或门市自取0755-82732291.

    2019-12-2

  • CE01系列CE01-22BS-DS原装现货

    深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729

    2019-11-25

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示