位置：首页 > IC中文资料第10414页 > CED02N6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CED02N6 | N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●600V,1.9A,RDS(ON)=5Ω@VGS=10V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,1.2A,RDS(ON)=10.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,1.3A,RDS(ON)=8.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.3A,RDS(ON)=8Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 600V,2A,RDS(ON)=5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■600V,2A,RDS(ON)=5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-CHANNELLOGICLEVELENHANCEMENTMODEFIELDEFFECTTRANSISTOR FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263&TO-262package&TO-220Ffull-pakforthroughhole. Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor 文件：132.65 Kbytes Page：4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
CED02N6产品属性
- 类型
描述
- 型号
CED02N6
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
2020+ |
TO-251 |
50940 |
公司代理品牌,原装现货超低价清仓! |
|||
CET/华瑞 |
23+24 |
TO-251 |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
CET/華瑞 |
22+ |
TO-251 |
34137 |
只做原装进口现货 |
|||
CET |
2023+ |
TO251 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
CET |
23+ |
TO251 |
8000 |
全新原装现货,欢迎来电咨询 |
|||
C |
23+ |
TO-251 |
6000 |
原装正品，支持实单 |
|||
CET |
23+ |
TO251 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
23+ |
N/A |
65210 |
正品授权货源可靠 |
||||
VB |
2019 |
TO-251 |
55000 |
绝对原装正品假一罚十! |
|||
CET/華瑞 |
21+ROHS |
TO251 |
38888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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深圳市大唐盛世半导体有限公司手机：17727572380。电话：0755-83226739QQ:626839837。微信号：15096137729
2019-11-25
DdatasheetPDF页码索引
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