BUZ11价格

参考价格:¥2.3956

型号:BUZ11_NR4941 品牌:Fairchild 备注:这里有BUZ11多少钱,2024年最近7天走势,今日出价,今日竞价,BUZ11批发/采购报价,BUZ11行情走势销售排行榜,BUZ11报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BUZ11

N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET

■TYPICALRDS(on)=0.03Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATORS ■DC

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BUZ11

SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

SIEMENS

Siemens Ltd

SIEMENS
BUZ11

30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thist

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
BUZ11

30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thist

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BUZ11

High input impedance

DESCRIPTION •StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max) •SOAisPowerDissipationLimited •Highinputimpedance APPLICATIONS designedforapplicationssuchasswitchingregulators, switchingconverters,motordrivers,relaydriversand driversforhighpowerbip

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUZ11

N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET??MOSFET

N-CHANNEL50V-0.03Q-33ATO-220STripFET™MOSFET ■TYPICALRos(on)=0.03Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATORS ■DC-DC&

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BUZ11

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BUZ11

N-Channel Power MOSFET 50V, 30A, 40 m廓

文件:323.03 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

SIEMENS

Siemens Ltd

SIEMENS

SIPMOS짰 Power Transistor

SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01Ω ContinuousdraincurrentID80A Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SIPMOS짰 Power Transistor

SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01Ω ContinuousdraincurrentID80A Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SIPMOS짰 Power Transistor

SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01Ω ContinuousdraincurrentID80A Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •LogicLevel •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

SIEMENS

Siemens Ltd

SIEMENS

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175˚Coperatingtemperature

SIEMENS

Siemens Ltd

SIEMENS

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

SIEMENS

Siemens Ltd

SIEMENS

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

SIEMENS

Siemens Ltd

SIEMENS

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.008Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175˚Coperatingtemperature

SIEMENS

Siemens Ltd

SIEMENS

N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET

■TYPICALRDS(on)=0.045Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATORS ■DC-DC&DC-ACCONVERTERS ■MOTORCONTROL,AUDIOAMPLI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

SIEMENS

Siemens Ltd

SIEMENS

Avalanche rugged technology

DESCRIPTION •StaticDrain-SourceOn-Resistance :RDS(on)=0.045Ω(Max) •Avalancheruggedtechnology •Highcurrentcapability •175℃OperatingTemperature APPLICATIONS •Highcurrent,highspeedswitching •Solenoidandrelaydrivers •Regulators •DC-DC&DC-ACconverters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •LogicLevel

SIEMENS

Siemens Ltd

SIEMENS

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.055Ω(Max)@VGS=5.0V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

SIEMENS

Siemens Ltd

SIEMENS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

•VERYLOWON-LOSSES •LOWDRIVEENERGYFOREASYDRIVE •HIGHTRANSCONDUCTANCE/CrssRATIO INDUSTRIALAPPLICATIONS: •AUTOMATIVEPOWERACTUATORS

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

N-Channel Power MOSFET 50V, 30A, 40 m廓

文件:323.03 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

High input impedance

文件:66.14 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BUZ11产品属性

  • 类型

    描述

  • 型号

    BUZ11

  • 功能描述

    MOSFET TO-220 N-CH 50V 33A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-27 12:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
TO-220-3
25000
ON全系列可订货
Infineon
22+
TO263
2645
100%全新原装公司现货供应!随时可发货
ST
22+
TO-220
30000
原装正品
INFINEON
1822+
TO-220
9852
只做原装正品假一赔十为客户做到零风险!!
Fairchild/ON
21+
TO2203
13880
公司只售原装,支持实单
HARRIS
9727
10000
OA
23+
TO-220
52
23+
N/A
36100
正品授权货源可靠
POWER
2022+
原厂原封
57550
onsemi
23+
TO-220-3
30000
晶体管-分立半导体产品-原装正品

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