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BUZ11价格
参考价格:¥2.3956
型号:BUZ11_NR4941 品牌:Fairchild 备注:这里有BUZ11多少钱,2024年最近7天走势,今日出价,今日竞价,BUZ11批发/采购报价,BUZ11行情走势销售排行榜,BUZ11报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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BUZ11 | N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET ■TYPICALRDS(on)=0.03Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATORS ■DC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
BUZ11 | SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated | SIEMENS Siemens Ltd | ||
BUZ11 | 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thist | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
BUZ11 | 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thist | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
BUZ11 | High input impedance DESCRIPTION •StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max) •SOAisPowerDissipationLimited •Highinputimpedance APPLICATIONS designedforapplicationssuchasswitchingregulators, switchingconverters,motordrivers,relaydriversand driversforhighpowerbip | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
BUZ11 | N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET??MOSFET N-CHANNEL50V-0.03Q-33ATO-220STripFET™MOSFET ■TYPICALRos(on)=0.03Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATORS ■DC-DC& | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
BUZ11 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
BUZ11 | N-Channel Power MOSFET 50V, 30A, 40 m廓 文件:323.03 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable | SIEMENS Siemens Ltd | |||
SIPMOS짰 Power Transistor SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01Ω ContinuousdraincurrentID80A Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SIPMOS짰 Power Transistor SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01Ω ContinuousdraincurrentID80A Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SIPMOS짰 Power Transistor SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01Ω ContinuousdraincurrentID80A Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •LogicLevel •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable | SIEMENS Siemens Ltd | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175˚Coperatingtemperature | SIEMENS Siemens Ltd | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable | SIEMENS Siemens Ltd | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable | SIEMENS Siemens Ltd | |||
SIPMOS Power Transistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.008Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SIPMOS Power Transistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SIPMOS Power Transistor Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated •175˚Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175˚Coperatingtemperature | SIEMENS Siemens Ltd | |||
N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET ■TYPICALRDS(on)=0.045Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SOLENOIDANDRELAYDRIVERS ■REGULATORS ■DC-DC&DC-ACCONVERTERS ■MOTORCONTROL,AUDIOAMPLI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated | SIEMENS Siemens Ltd | |||
Avalanche rugged technology DESCRIPTION •StaticDrain-SourceOn-Resistance :RDS(on)=0.045Ω(Max) •Avalancheruggedtechnology •Highcurrentcapability •175℃OperatingTemperature APPLICATIONS •Highcurrent,highspeedswitching •Solenoidandrelaydrivers •Regulators •DC-DC&DC-ACconverters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated •LogicLevel | SIEMENS Siemens Ltd | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.055Ω(Max)@VGS=5.0V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.04Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive, | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated | SIEMENS Siemens Ltd | |||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS •VERYLOWON-LOSSES •LOWDRIVEENERGYFOREASYDRIVE •HIGHTRANSCONDUCTANCE/CrssRATIO INDUSTRIALAPPLICATIONS: •AUTOMATIVEPOWERACTUATORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
N-Channel Power MOSFET 50V, 30A, 40 m廓 文件:323.03 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
High input impedance 文件:66.14 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
BUZ11产品属性
- 类型
描述
- 型号
BUZ11
- 功能描述
MOSFET TO-220 N-CH 50V 33A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
24+ |
TO-220-3 |
25000 |
ON全系列可订货 |
|||
Infineon |
22+ |
TO263 |
2645 |
100%全新原装公司现货供应!随时可发货 |
|||
ST |
22+ |
TO-220 |
30000 |
原装正品 |
|||
INFINEON |
1822+ |
TO-220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Fairchild/ON |
21+ |
TO2203 |
13880 |
公司只售原装,支持实单 |
|||
HARRIS |
9727 |
10000 |
|||||
OA |
23+ |
TO-220 |
52 |
||||
23+ |
N/A |
36100 |
正品授权货源可靠 |
||||
POWER |
2022+ |
原厂原封 |
57550 |
||||
onsemi |
23+ |
TO-220-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
BUZ11规格书下载地址
BUZ11参数引脚图相关
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- BUZ110S
- BUZ11_NR4941
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- BUZ10A
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- BUZ104
- BUZ103S
- BUZ103
- BUZ102S
- BUZ102
- BUZ101S
- BUZ101L
- BUZ101
- BUZ100S
- BUZ100L
- BUZ100
- BUZ10
- BUY92
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- BUXD87T4
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- BUX85G
- BUX48A
- BU-X15400-2
- BU-X15400-0
- BUW12A
- BUV48A
- BUV27G
- BUV26G
- BUV22G
- BUV21G
- BUTW92
- BUTT-12-5
- BUT-7F
- BUT70W
- BUT-5F
- BUT-4171-BULK
- BUT-3FHS-25
- BUT30V
BUZ11数据表相关新闻
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DdatasheetPDF页码索引
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