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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BUK9506-55B | N-channelTrenchMOSTMlogiclevelFET [Philips] Generaldescription N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Log | ETC1List of Unclassifed Manufacturers 未分类制造商 | ||
BUK9506-55B | N-channelTrenchMOSFET Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■Lowconductionlossesd | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BUK9506-55B | N-channelTrenchMOSFET 1.1Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusing TrenchMOStechnology.Thisproducthasbeendesignedandqualifiedtotheappropriate AECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits Lowconduction | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | ||
BUK9506-55B | iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
TrenchMOS횚transistorLogiclevelFET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Features ■TrenchMOS™technology ■Q101compliant ■175°Crated ■Logiclevelcompatible. Applications ■Automotiveandgeneralpu | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
TrenchMOSlogiclevelFET 文件:115.2 Kbytes Page:16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
BUK9506-55B产品属性
- 类型
描述
- 型号
BUK9506-55B
- 功能描述
MOSFET HIGH PERF TRENCHMOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP/恩智浦 |
23+ |
NA/ |
31500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PHILIPS |
21+ |
35200 |
一级代理/放心采购 |
||||
NXP |
1932+ |
TO-220 |
1895 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
mcc |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NXP |
20+ |
TO-220 |
90000 |
全新原装正品/库存充足 |
|||
NXP/恩智浦 |
22+ |
TO-220AB |
91070 |
||||
NXP |
2023+ |
TO-220 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
PH |
08+(pbfree) |
SOT78TO-220AB |
8866 |
||||
NXP/恩智浦 |
TO-220AB |
265209 |
假一罚十原包原标签常备现货! |
||||
NXP-恩智浦 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
BUK9506-55B规格书下载地址
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2020-9-17
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