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位置：首页 > IC中文资料第3246页 > BUK7

BUK7价格

参考价格：￥13.5268

型号：BUK7105-40AIE,118 品牌：NXP 备注：这里有BUK7多少钱，2024年最近7天走势，今日出价，今日竞价，BUK7批发/采购报价，BUK7行情走势销售排行榜，BUK7报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BUK7105-40AIE

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.ThedevicesincludeTrenchPLUScurrentsensing anddiodesforElectroStaticDischarge(ESD)protection.Thisproducthasbeendesigned andqualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7105-40ATE

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.ThedevicesincludeTrenchPLUSdiodesfor temperaturesensingandElectroStaticDischarge(ESD)protection.Thisproducthasbeen designedandqualif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7107-40ATC

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.ThedevicesincludeTrenchPLUSdiodesfor clampingandtemperaturesensing.Thisproducthasbeendesignedandqualifiedtothe appropriateAECstand

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7107-55AIE

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.ThedevicesincludeTrenchPLUScurrentsensing anddiodesforElectroStaticDischarge(ESD)protection.Thisproducthasbeendesigned andqualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7107-55ATE

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.ThedevicesincludeTrenchPLUSdiodesfor ElectroStaticDischarge(ESD)protectionandtemperaturesensing.Thisproducthasbeen designedandqualif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7108-40AIE

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.ThedevicesincludeTrenchPLUScurrentsensing anddiodesforElectroStaticDischarge(ESD)protection.Thisproducthasbeendesigned andqualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7109-75AIE

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.ThedevicesincludeTrenchPLUScurrentsensing anddiodesforElectroStaticDischarge(ESD)protection.Thisproducthasbeendesigned andqualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7109-75ATE

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.ThedevicesincludeTrenchPLUSdiodesfor ElectroStaticDischarge(ESD)protectionandtemperaturesensing.Thisproducthasbeen designedandqualif

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK714R1-40BT

N-channel TrenchPLUS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingNXPHigh-PerformanceAutomotive(HPA)TrenchMOStechnology.The devicesincludeTrenchPLUSdiodesfortemperaturesensing.Thisproducthasbeen designedandqualifiedto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7207-30B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=30V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7207-30B

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7208-40B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=40V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7208-40B

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7210-55B

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingNexperiaHigh-PerformanceAutomotive(HPA)TrenchMOStechnology. ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuse inautomotivecritica

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7212-55B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7212-55B

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7213-40A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=40V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7214-75B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=75V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7214-75B

N-channel TrenchMOS standard level FET

1.Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK72150-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK72150-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7215-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7215-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7219-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7222-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7222-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7225-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7225-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7226-75A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=75V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7226-75A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingNexperiaGeneralPurposeAutomotive(GPA)TrenchMOS technology.ThisproducthasbeendesignedandqualifiedtotheappropriateAEC standardforuseinautomotivecritical

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7227-100B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposesw

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7227-100B

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7230-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7230-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7237-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7237-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7240-100A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposesw

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7240-100A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK725R0-40C

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelgatedriveN-channelenhancementmodeField-EffectTransistor(FET)ina plasticpackageusingadvancedTrenchMOStechnology.Thisproducthasbeendesigned andqualifiedtotheappropriateAECstandardforuseinhighperformanceautomotive applications.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7275-100A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7277-55A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7277-55A

N-channel TrenchMOS standard level FET

1.Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7504-40A

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology,featuringverylowon-stateresistance. Productavailability: BUK7504-40AinSOT78(TO-220AB);BUK7604-40AinSOT404(D2-PAK); BUK7E04-40AinSOT226(I2-PAK). Feature

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BUK7504-40A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=40V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7504-40A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7505-30A

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technologywhichfeaturesverylowon-stateresistance.Itisintendedforuseinautomotiveandgeneralpurposeswitchingapplications.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BUK7505-30A

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=30V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7506-30

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinautomotiveandgen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BUK7506-55A

TrenchMOS standard level FET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■AECQ101

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BUK7506-55A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7506-55B

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7506-55BinSOT78(TO-220AB) BUK7606-55BinSOT404(D2-PAK). Features ■Verylowon-stateresistan

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BUK7506-55B

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7506-75B

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotiveTrenchMOS™technology. Productavailability: BUK7506-75BinSOT78(TO-220AB) BUK7606-75BinSOT404(D2-PAK). Features ■Verylowon-stateresistance. ■

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BUK7506-75B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=75V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7506-75B

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7507-30B

TrenchMOS standard level FET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtotheappropriateAECstandardforuseinautomotivecriticalapplications. Featuresandbenefits ■AECQ101

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BUK7507-30B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=30V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BUK7507-30B

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
BUK7507-55B

TrenchMOS standard level FET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingPhilipsHigh-PerformanceAutomotive(HPA)TrenchMOS™technology. Productavailability: BUK7507-55BinSOT78(TO-220AB) BUK7607-55BinSOT404(D2-PAK). Features ■Verylow

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BUK7507-55B

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainSourceVoltage :VDSS=55V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

BUK7产品属性

  • 类型

    描述

  • 型号

    BUK7

  • 制造商

    NXP Semiconductors

  • 功能描述

    Cut Tape

  • 制造商

    NXP Semiconductors

  • 功能描述

    Trans MOSFET N-CH 40V 155A 5-Pin(4+Tab) D2PAK

BUK7供应商更多...

更新时间：2024-5-22 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯世纪电子有限公司
BUK7105-40AIE
NXP/恩智浦
22+
SOT-263
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
BUK7105-40AIE
NXP/恩智浦
23+
NA/
3622
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市博浩通科技有限公司
BUK7105-40AIE
PH
23+
STO426T
8600
全新原装现货
询价
深圳市维尔达电子有限公司
BUK7105-40AIE
PHILIPS
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市跃创芯科技有限公司
BUK7105-40AIE
NXP/恩智浦
2022+
TO-263
30000
进口原装现货供应,绝对原装 假一罚十
询价
深圳市一线半导体有限公司
BUK7105-40AIE
PH
08+(pbfree)
SOT426TO-263D2PAK
8866
询价
深圳市威雅利发展有限公司
BUK7105-40AIE
NXP/恩智浦
0549+
TO-263
3622
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市汇莱威科技有限公司
BUK7105-40AIE
NXP/恩智浦
TO-263
265209
假一罚十原包原标签常备现货!
询价
深圳市惊羽科技有限公司
BUK7105-40AIE
NXP-恩智浦
24+25+/26+27+
车规-晶体管
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳和润天下电子科技有限公司
BUK7105-40AIE
NXP/恩智浦
22+
D2PAK
16224
询价

BUK7芯片相关品牌

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  • Hitachi
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  • LUGUANG
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  • NEC
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  • SILABS
  • SUPERWORLD

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