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BLF8价格
参考价格：￥629.8406
型号：BLF861A 品牌：ASI 备注：这里有BLF8多少钱，2024年最近7天走势，今日出价，今日竞价，BLF8批发/采购报价，BLF8行情走势销售排行榜，BLF8报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BLF8 | Axial Lead and Cartridge Fuses - Midget 文件：78.82 Kbytes Page：1 Pages | LittelfuseLittelfuse Inc. 力特力特公司 |  |   |
surface Mountable RFI Filters TycoElectronicsintroducesanewlineofsurfacemountableRFIfiltersspecificallydesignedtoeliminatenoiseonthesignalline.Theseboardlevelfiltersattenuatenoiseonthesignallineatthefrequencyrangeof10MHzto1000MHzwithmaximumattenuationat40MHzto400MHz. BLFSerie | MACOM Tyco Electronics |  | | |
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinanSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •SourceonundersideeliminatesDCisolator | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinaSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •Designedtowithstandabruptloadmismatch | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
UHF POWER LDMOS TRANSISTOR DESCRIPTION: TheASIBLF861AiaaSiliconN-channelenhancementmodelateralD-MOSpush-pulltransistor. FEATURES: •Internalinput-outputmatching •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc |  | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
UHF power LDMOS transistor DESCRIPTION SiliconN-channelenhancementmodelateralD-MOSpush-pulltransistorinaSOT540Apackagewithceramiccap.Thecommonsourceisconnectedtothemountingflange. FEATURES •Highpowergain •Easypowercontrol •Excellentruggedness •Designedtowithstandabruptloadmismatch | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
UHF power LDMOS transistor Features ■2-toneperformanceat860MHz,adrain-sourcevoltageVDSof40VandaquiescentdraincurrentIDq=0.5A: ♦Peakenvelopepowerloadpower=100W ♦Powergain=21dB ♦Drainefficiency=47 ♦Thirdorderintermodulationdistortion=−35dBc ■DVBperformanceat8 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A300WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorcandeliver250WbroadbandoverthefullUHFbandfrom470MHzto860MHz.Theexcellentruggednessandbroadbandperformanceofthisdevicemakesitidealfor | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A300WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorcandeliver300WbroadbandoverthefullUHFbandfrom470MHzto860MHz.Theexcellentruggednessandbroadbandperformanceofthisdevicemakesitidealfor | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A140WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorcandeliver140WfromHFto1GHz.Theexcellentruggednessandbroadbandperformanceofthisdevicemakesitidealfordigitaltransmitterapplications. Feat | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A140WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Thetransistorcandeliver140WfromHFto1GHz.Theexcellent ruggednessandbroadbandperformanceofthisdevicemakesitidealfordigital transmitterapplications. F | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 |  | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A140WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorcandeliver140WfromHFto1GHz.Theexcellentruggednessandbroadbandperformanceofthisdevicemakesitidealfordigitaltransmitterapplications. Feat | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A140WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Thetransistorcandeliver140WfromHFto1GHz.Theexcellent ruggednessandbroadbandperformanceofthisdevicemakesitidealfordigital transmitterapplications. F | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A200WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Thetransistorcandeliver200WinbroadbandapplicationsfromHFto 860MHz.Theexcellentruggednessandbroadbandperformanceofthisdevicemakesit idealfordigital | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A200WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Thetransistorcandeliver200WinbroadbandapplicationsfromHFto 860MHz.Theexcellentruggednessandbroadbandperformanceofthisdevicemakesit idealfordigital | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A350WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits Excellentruggedness Optimumthe | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A350WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness Optimumthermalbeh | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A350WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits Excellentruggedness Optimumthe | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A350WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness Optimumthermalbeh | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A500WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Thetransistorisoptimizedfordigitalapplicationsandcandeliver110WaverageDVB-TbroadbandoverthefullUHFbandfrom470MHzto860MHz.Theexcellentruggednessof | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1through | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrialapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits ■Excellentruggedness(VSWR≥40:1througha | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness(VSWR40:1through | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A650WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness Optimumthermalbeh | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
UHF power LDMOS transistor Generaldescription A650WLDMOSRFpowertransistorforbroadcasttransmitterapplicationsandindustrial applications.Theexcellentruggednessofthisdevicemakesitidealfordigitalandanalog transmitterapplications. Featuresandbenefits Excellentruggedness Optimumthermalbeh | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorforbroadcastDohertytransmitterapplications.The excellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitter applications. Featuresandbenefits Highefficiency Highpowergain Excellentruggedness(VSW | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A600WLDMOSRFpowertransistorforbroadcastDohertytransmitterapplications.The excellentruggednessofthisdevicemakesitidealfordigitalandanalogtransmitter applications. Featuresandbenefits Highefficiency Highpowergain Excellentruggedness(VSW | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A750WLDMOSRFpowertransistorforasymmetricalbroadcastDohertytransmitter applicationswhichoperatesat150WDVB-Taveragepower.Theexcellentruggednessof thisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits Design | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A750WLDMOSRFpowertransistorforasymmetricalbroadcastDohertytransmitter applicationswhichoperatesat150WDVB-Taveragepower.Theexcellentruggednessof thisdevicemakesitidealfordigitalandanalogtransmitterapplications. Featuresandbenefits Design | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A900WLDMOSRFpowertransistorforbroadcastDoherty,classABtransmitterand ISMapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitaland analogtransmitterapplications. Featuresandbenefits DesignedforsymmetricandasymmetricDoherty | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
UHF power LDMOS transistor Generaldescription A900WLDMOSRFpowertransistorforbroadcastDoherty,classABtransmitterand ISMapplications.Theexcellentruggednessofthisdevicemakesitidealfordigitaland analogtransmitterapplications. Featuresandbenefits DesignedforsymmetricandasymmetricDoherty | AmpleonAmpleon USA Inc. 安谱隆安谱隆半导体（合肥）有限公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
Power LDMOS transistor Featuresandbenefits Excellentruggedness Highefficiency LowRthprovidingexcellentthermalstability Designedforbroadbandoperation(820MHzto960MHz) LoweroutputcapacitanceforimprovedperformanceinDohertyapplications Designedforlowmemoryeffectsprovidingexcel | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BLF8产品属性
- 类型
描述
- 型号
BLF8
- 制造商
LITTELFUSE
- 制造商全称
Littelfuse
- 功能描述
Axial Lead and Cartridge Fuses - Midget
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMPLEON |
22+ |
N/A |
8007 |
只做原装挂了就有货 |
|||
NXP(恩智浦) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Ampleon |
23/22+ |
SOT467C |
100 |
代理渠道.实单必成 |
|||
PHILIPS |
21+ |
SMD |
10000 |
勤思达只做原装 现货库存 支持支持实单 |
|||
NXP |
540010 |
自己库存,有更多量 |
|||||
NXP/恩智浦 |
18+ |
25 |
现货正品专供军研究院 |
||||
Philips |
23+ |
提供BOM配单服务 |
7300 |
专注配单,只做原装进口现货 |
|||
PHILIPS |
23+ |
SOT540A |
9960 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
|||
PHILIPS/飞利浦 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
PHILIPS |
1922+ |
TO-62 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
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2021-8-23BLF6G22LS-130 BLF6G22LS-130全新原装现货
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2020-12-4BLF6G38LS-100
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2019-9-23
DdatasheetPDF页码索引
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