| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1200VN-ChannelSiliconCarbidePowerMOSFET Features ⚫Highblockingvoltage ⚫Highspeedswitchingwithlowcapacitance ⚫Highoperatingjunctiontemperaturecapability ⚫Veryfastandrobustintrinsicbodydiode Applications ⚫Solarinverters ⚫UPS ⚫HighvoltageDC/DCconverters ⚫Switchmodepowersupplies | DINTEK DinTek Semiconductor Co,.Ltd |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
PolarHiPerFETPowerMOSFET Polar™HiPerFET™PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicDiode ●LowQG ●LowRDS(on) ●LowDrain-to-TabCapacitance ●LowPackageInductance Advant | IXYS IXYS Integrated Circuits Division |  | | |
HighVoltageHiPerFETPowerMOSFET HighVoltageHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandto | IXYS IXYS Integrated Circuits Division | | | |
PowerMOSFET 文件：185.65 Kbytes Page：6 Pages | IXYS IXYS Integrated Circuits Division | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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1923+ |
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8900 |
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