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BFY19晶体管资料
BFY19别名：BFY19三极管、BFY19晶体管、BFY19晶体三极管
BFY19生产厂家：德国椤茨标准电器公司
BFY19制作材料：Si-NPN
BFY19性质：射频/高频放大 （HF）_开关管 （S）
BFY19封装形式：直插封装
BFY19极限工作电压：30V
BFY19最大电流允许值：0.1A
BFY19最大工作频率：400MHZ
BFY19引脚数：3
BFY19最大耗散功率：0.3W
BFY19放大倍数：
BFY19图片代号：D-8
BFY19vtest：30
BFY19htest：400000000
- BFY19atest：.1
BFY19wtest：.3
BFY19代换 BFY19用什么型号代替：BC108,BC172,BC183,BC238,BSW41,BSY63,2N2221,2N2222,3DG122A,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.3dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006 | SIEMENS Siemens Ltd |  |   | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6.5GHz,F=3dBat2GHz •ESAQualificationpending | SIEMENS Siemens Ltd | | | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainamplifiersupto2GHz. •Forlinearbroadbandamplifiers •Hermeticallysealedmicrowavepackage •fT=6,5GHz F=3dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.No.:5 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor 文件：149.81 Kbytes Page：4 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor 文件：149.81 Kbytes Page：4 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：MICRO-X1 包装：卷带（TR） 描述：RF TRANS NPN 12V 7.5GHZ MICRO X1 分立半导体产品 晶体管 - 双极（BJT）- 射频 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor 文件：149.38 Kbytes Page：4 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
HiRel NPN Silicon RF Transistor 文件：149.38 Kbytes Page：4 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BFY19产品属性
- 类型
描述
- 型号
BFY19
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
HiRel NPN Silicon RF Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2019 |
MICRO-X1 |
55000 |
原装进口假一罚十 |
|||
INFINEON |
23+ |
CG-UX-4 |
8000 |
只做原装现货 |
|||
MOT/ST/PH |
2339+ |
CAN6 |
13523 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
INFINEON |
22+ |
CG-UX-4 |
8000 |
终端可免费供样,支持BOM配单 |
|||
MOT/PHI |
16+ |
CAN3 |
9500 |
原装现货假一罚十 |
|||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
23+ |
N/A |
12850 |
正品授权货源可靠 |
||||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
|||
INFINEON |
23+ |
-- |
14253 |
原包装原标现货,假一罚十, |
|||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
BFY19芯片相关品牌
BFY19规格书下载地址
BFY19参数引脚图相关
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BFY19数据表相关新闻
B-G474E-DPOW1
优势渠道
2023-6-29B-G431B-ESC1
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2023-6-29BFU520A
BFU520A
2023-5-19BG95M6LA-64-SGNS
www.58chip.com
2022-5-20BFU730F115
双极功率RF双极晶体管，RF双极小信号RF双极晶体管，双极RF双极晶体管，Si双极NPN30RF双极晶体管，双极NPNAEC-Q101RF双极晶体管，单SMD/SMTNPNRF双极晶体管
2020-8-3BFU768F
BFU768F
2019-10-31
DdatasheetPDF页码索引
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