BFY18晶体三极管数据表ic资料批发采购价格-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

芯片资料
库存查询
行业新闻
生产厂家
替换型号
晶体管

BFY18晶体管资料

BFY18别名：BFY18三极管、BFY18晶体管、BFY18晶体三极管
BFY18生产厂家：德国椤茨标准电器公司
BFY18制作材料：Si-NPN
BFY18性质：射频/高频放大（HF）_开关管（S）
BFY18封装形式：直插封装
BFY18极限工作电压：40V
BFY18最大电流允许值：0.1A
BFY18最大工作频率：145MHZ
BFY18引脚数：3
BFY18最大耗散功率：0.3W
BFY18放大倍数：
BFY18图片代号：D-8
BFY18vtest：40
BFY18htest：145000000
BFY18atest：.1
BFY18wtest：.3

BFY18代换 BFY18用什么型号代替：BC107,BC171,BC183,BC237,BSW41,BSY63,2N2221,2N2222,3DG120C,

型号	功能描述	生产厂家&企业
BFY18	Small Signal Transistors 文件：33.47 Kbytes Page：1 Pages	CentralCentral Semiconductor Corp 美国中央半导体
BFY180	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0.2to2.5mA •Hermeticallysealedmicrowavepackage •fT=6.5GHz,F=2.6dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENS Siemens Ltd
BFY180	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY180ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY180H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY180P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY180S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlowpoweramplifiersatcollectorcurrentsfrom0,2mAto2,5mA. •Hermeticallysealedmicrowavepackage •fT=6,5GHzF=2.6dBat2GHz •eesaSpaceQualifiedESA/SCCDetailSpec.No.:5611/006TypeVariant	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.2dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENS Siemens Ltd
BFY181	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.2dBat2GHz •eesaSpaceQualified ESA/SCCDetailS	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.4dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENS Siemens Ltd
BFY182	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. •Hermeticallysealedmicrowavepackage •fT=8GHz F=2.4dBat2GHz •eesaSpaceQualified ESA/SCCDetailSpec.	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.3dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006	SIEMENS Siemens Ltd
BFY183ES	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183H	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183P	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183S	HiRel NPN Silicon RF Transistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181	HiRel NPN Silicon RF Transistor 文件：148.75 Kbytes Page：4 Pages	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY181_11	HiRel NPN Silicon RF Transistor 文件：148.75 Kbytes Page：4 Pages	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182	HiRel NPN Silicon RF Transistor 文件：148.58 Kbytes Page：4 Pages	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY182_11	HiRel NPN Silicon RF Transistor 文件：148.58 Kbytes Page：4 Pages	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183	HiRel NPN Silicon RF Transistor 文件：149.46 Kbytes Page：4 Pages	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
BFY183_11	HiRel NPN Silicon RF Transistor 文件：149.46 Kbytes Page：4 Pages	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司

BFY18产品属性

类型
描述
型号
BFY18
制造商
CENTRAL
制造商全称
Central Semiconductor Corp
功能描述
Small Signal Transistors

BFY18供应商更多...

更新时间：2024-4-26 20:23:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	BFY18	MOT/PHI	专业铁帽	CAN3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市永贝尔科技有限公司	BFY18	CENTRAL	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市豪迈兴电子有限公司	BFY18	MOT/ST/PH	2339+	CAN3	13523	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市特顺芯科技有限公司	BFY18	MOT		CAN3	450000		询价
深圳市昊创电子有限公司	BFY18	MOT/PHI	专业铁帽	CAN3	19500	原装铁帽专营,代理渠道量大可订货	询价
深圳市安富世纪电子有限公司	BFY183SAMZZZA1	INFINEON	23+	CG-UX-4	8000	只做原装现货	询价
深圳市大联智电子有限公司	BFY18	MOT/PH/ST/SS	2022+	CAN3	3000	只售进口原装公司现货!	询价
深圳市河锋鑫科技有限公司	BFY182ESZZZA1	INFINEON	22+	CG-UX-4	8000	终端可免费供样,支持BOM配单	询价
深圳市亿智腾科技有限公司	BFY18		2021+	CAN	6430	原装现货/欢迎来电咨询	询价
深圳市弘为电子有限公司	BFY18	MOT/PHI	16+	CAN3	19500	原装现货假一罚十	询价

BFY18芯片相关品牌

BFY18规格书下载地址

BFY18参数引脚图相关

BFY18数据表相关新闻

B-G474E-DPOW1
优势渠道
2023-6-29
B-G431B-ESC1
优势渠道
2023-6-29
BFU520A
BFU520A
2023-5-19
BG95M6LA-64-SGNS
www.58chip.com
2022-5-20
BFU730F115
双极功率RF双极晶体管，RF双极小信号RF双极晶体管，双极RF双极晶体管，Si双极NPN30RF双极晶体管，双极NPNAEC-Q101RF双极晶体管，单SMD/SMTNPNRF双极晶体管
2020-8-3
BFU768F
BFU768F
2019-10-31

您好,欢迎来到114ic资料网！

BFY18晶体管资料

BFY18产品属性

BFY18供应商更多...

BFY18芯片相关品牌

BFY18规格书下载地址

BFY18参数引脚图相关

BFY18数据表相关新闻

B-G474E-DPOW1

B-G431B-ESC1

BFU520A

BG95M6LA-64-SGNS

BFU730F115

BFU768F

DdatasheetPDF页码索引