NPN 1 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT23package. APPLICATIONS •AwiderangeofRFapplicationssuchas: –MixersandoscillatorsinTVtuners –RFcommunicationsequipment.

Silicon NPN Planar RF Transistor

Features ●Highpowergain ●SMD-package Applications   Forbroadbandamplifiersupto1GHz.

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

NPN Transistors

■Features ●CollectorCurrentCapabilityIC=25mA ●CollectorEmitterVoltageVCEO=15V

NPN 3 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT23package. APPLICATIONS •ItisintendedforRFapplicationssuchasoscillatorsinTVtuners.

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Smallcollectorcapacitance •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications    Wideband,lownoise,smallsignalamplifiersuptoUHFfrquencies,highspeedlogicapplicationsandosci

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Smallcollectorcapacitance •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications    Wideband,lownoise,smallsignalamplifiersuptoUHFfrquencies,highspeedlogicapplicationsandosci

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Smallcollectorcapacitance •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications    Wideband,lownoise,smallsignalamplifiersuptoUHFfrquencies,highspeedlogicapplicationsandosci

NPN SILICON PLANAR RF TRANSISTORS

SOT23NPNSILICONPLANARRFTRANSISTORS PARTMARKINGDETAILS—BFS17L-E1L BFS17H-E1H

NPN Transistors

■Features ●CollectorCurrentCapabilityIC=25mA ●CollectorEmitterVoltageVCEO=15V ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish

NPN SILICON PLANAR RF TRANSISTORS

SOT23NPNSILICONPLANARRFTRANSISTORS PARTMARKINGDETAILS—BFS17L-E1L BFS17H-E1H

RF TRANSISTOR NPN SILICON

TheRFLineNPNsiliconHigh-FrequencyTransistor Designedprimarilyforuseinhigh–gain,low–noiseamplifier,oscillatorandmixerapplications.Packagedforthickorthinfilmcircuitsusingsurfacemountcomponents. •T1suffixindicatestapeandreelpackagingof3,000unitsperreel.

NPN RF TRANSISTOR IN SOT-23

Features •3.2GHzunitygainforRFswitchingapplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •PPAPcapable(Note4) Applications •RFswitch

NPN RF TRANSISTOR IN SOT-23

Features •3.2GHzunitygainforRFswitchingapplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability •PPAPcapable(Note4) Applications •RFswitch

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forbroadbandamplifiersupto1GHzat collectorcurrentsfrom1mAto20mA •Pb-free(RoHScompliant)package

NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forbroadbandamplifiersupto1GHzatcollector currentsfrom1mAto20mA •CECC-typeavailable:CECC50002/248.

Silicon NPN Planar RF Transistor

Features ●Highpowergain ●SMD-package Applications   Forbroadbandamplifiersupto1GHz.

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forbroadbandamplifiersupto1GHzatcollectorcurrentsfrom1mAto20mA •BFS17S:Fororientationinreelseepackageinformationbelow •Pb-free(RoHScompliant)package

NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forbroadbandamplifiersupto1GHzatcollectorcurrentsfrom1mAto20mA

NPN 1 GHz wideband transistor

DESCRIPTION SiliconNPNtransistorinaplasticSOT323(S-mini)package.TheBFS17WusesthesamecrystalastheSOT23version,BFS17. APPLICATIONS Primarilyintendedasamixer,oscillatorandIFamplifierinUHFandVHFtuners.

Silicon NPN Planar RF Transistor

Features ●Highpowergain ●SMD-package Applications   Forbroadbandamplifiersupto1GHz.

NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forbroadbandamplifiersupto1GHzatcollector currentsfrom1mAto20mA

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forbroadbandamplifiersupto1GHzat collectorcurrentsfrom1mAto20mA •Pb-free(RoHScompliant)package

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

npn silicon rf transistor

npn silicon rf transistor

NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage. FEATURES •Lowcurrent(max.30mA) •Lowvoltage(max.20V). APPLICATIONS •Mediumfrequencyapplicationsinthickandthin-filmcircuits.

npn silicon rf transistor

NPN Medium Frequency Transistor

Features ●Lowcurrent(max.30mA) ●LowVoltage(max.20V)

NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage. FEATURES •IC(max)=25mA •VCEO(max)=20V. APPLICATIONS •Mediumfrequencyapplicationsinthickandthin-filmcircuits.

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

NPN medium frequency transistor

FEATURES •IC(max)=25mA •VCEO(max)=20V. APPLICATIONS •Mediumfrequencyapplicationsinthickandthin-filmcircuits. DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage.

npn silicon rf transistor

NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage. FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.20V) •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFapplicationsinthickandthin-filmcircuits.

NPN SILICON PLANAR VHF TRANSISTOR

PARTMARKINGDETAIL-G1

NPN SILICON RF TRANSISTOR

NPNSiliconRFTransistor BFS20isanepitaxialNPNsiliconplanarRFtransistorinTO236plasticpackage(23A3DIN41869),intendedforuseinfilmcircuits. ThetransistorBFS20ismarkedNA.Itisalsoavailableuponrequestwithchangedterminalsequence(emitterandbaseterminalint

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION.

Surface mount Si-Epitaxial PlanarTransistors

•Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

NPN medium frequency transistor

FEATURES •IC(max)=25mA •VCEO(max)=20V •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFthickandthin-filmcircuitapplications. DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage.

NPN Medium Frequency Transistor

Features •Lowcurrent(max.25mA) •Lowvoltage(max.20V) •Verylowfeedbackcapacitance(typ.350fF).

NPN Silicon Epitaxial Planar Transistor

NPNSiliconEpitaxialPlanarTransistor HighfrequencytransistorforIFandVHFapplications

NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaSOT23plasticpackage. FEATURES •IC(max)=25mA •VCEO(max)=20V •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFthickandthin-filmcircuitapplications.

Plastic-Encapsulate Transistor

FEATURES HighFequencyApplication. VHFBandAmplifierapplication RoHSCompliantProduct Powerdissipation PCM:0.25W CollectorCurrent ICM:25mA Collector-basevoltage V(BR)CBO:30V Operating&storagejunctiontemperature

TRANSISTOR (NPN)

FEATURES •VeryLowFeedbackCapacitance •LowCurrent •LowVoltage APPLICATIONS •IFandVHFApplicationsinThickandThin-FilmCircuits

NPN SILICON RF TRANSISTOR

NPNSiliconRFTransistor BFS20isanepitaxialNPNsiliconplanarRFtransistorinTO236plasticpackage(23A3DIN41869),intendedforuseinfilmcircuits. ThetransistorBFS20ismarkedNA.Itisalsoavailableuponrequestwithchangedterminalsequence(emitterandbaseterminalint

NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaSOT323(SC-70)plasticpackage. FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.20V). •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFapplicationsinthickandthin-filmcircuits.

NPN medium frequency transistor

DESCRIPTION NPNmediumfrequencytransistorinaSOT323(SC-70)plasticpackage. FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.20V). •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFapplicationsinthickandthin-filmcircuits.

NPN medium frequency transistor

FEATURES •Lowcurrent(max.25mA) •Lowvoltage(max.20V). •Verylowfeedbackcapacitance(typ.350fF). APPLICATIONS •IFandVHFapplicationsinthickandthin-filmcircuits. DESCRIPTION NPNmediumfrequencytransistorinaSOT323(SC-70)plasticpackage.

NPN 5 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisdesignedforuseinRFamplifiersandoscillatorsinpagersandpocketphoneswithsignalfrequenciesupto2GHz. FEATURES •Lowcurrentconsumption •Lownoisefigure •Goldmetallizationensuresexcellentreliability •SOT323

NPN 5 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisdesignedforuseinRFamplifiersandoscillatorsinpagersandpocketphoneswithsignalfrequenciesupto2GHz. FEATURES •Lowcurrentconsumption •Lownoisefigure •Goldmetallizationensuresexcellentreliability •SOT323

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

NPN Silicon RF Transistor

NPNSiliconRFTransistor Preliminarydata •Highcurrentcapabilityandlowfigurefor widedynamicrangeapplication •Lowvoltageoperation •Idealforlowphasenoiseoscillatorsupto3.5GHz •Lownoisefigure:1.1dBat1.8GHz •Builtin2transistors(TR1,TR2:dieasBFR380L3)

NPN Silicon RF TWIN Transistor

NPNSiliconRFTWINTransistor •HighfTof22GHz •Forlowvoltage/lowcurrentapplications •IdealforVCOmodulesandlownoiseamplifiers •Lownoisefigure:1.1dBat1.8GHz •WorldssmallestSMD6-pinleadlesspackage •ExcellentESDperformance •Builtin2transistors(TR1,TR2:

NPN Silicon RF TWIN Transistor

NPNSiliconRFTWINTransistor* ​​​​​​​ •Lowvoltage/lowcurrentapplications •IdealforVCOmodulesandlownoiseamplifiers •WorldssmallestSMD6-pinleadlesspackage •Builtin2transitors(TR1:dieasBFR460L3, TR2:dieasBFR360L3) •Lownoisefi

NPN Silicon RF TWIN Transistor

NPNSiliconRFTWINTransistor* •Lowvoltage/lowcurrentapplications •IdealforVCOmodulesandlownoiseamplifiers •WorldssmallestSMD6-pinleadlesspackage •Builtin2transitors(TR1:dieasBFR460L3, TR2:dieasBFR949L3) •Lownoisefigure:TR1

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobilecommunicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA •fT=7GHz F=1.5dBat900MHz •Two(galvanic)internalisolatedTransistorsinonepackage

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,low-poweramplifiersinmobilecommunicationsystems(pager,cordlesstelephone)atcollectorcurrentsfrom0.2mAto8mA •fT=7GHz F=1.5dBat900MHz •Two(galvanic)internalisolatedTransistorsinonepackage

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifieratcollectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.4dBat900MHz •Two(galvanic)internalisolatedTransistorsinonepackage

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •Two(galvanic)internalisolatedTransistorsinonepackage •Fororientationinreelseepackageinformationbelow •Ea