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BFR18晶体管资料
BFR18别名：BFR18三极管、BFR18晶体管、BFR18晶体三极管
BFR18生产厂家：德国电子元件股份公司
BFR18制作材料：Si-NPN
BFR18性质：低频或音频放大 （LF）_TR
BFR18封装形式：直插封装
BFR18极限工作电压：85V
BFR18最大电流允许值：0.5A
BFR18最大工作频率：90MHZ
BFR18引脚数：3
BFR18最大耗散功率：0.5W
BFR18放大倍数：
BFR18图片代号：D-8
BFR18vtest：85
BFR18htest：90000000
- BFR18atest：.5
BFR18wtest：.5
BFR18代换 BFR18用什么型号代替：BC141,BC489,BC538,BC639,BCX24,BSW63,BSW64,2N3700,2N3701,2SD667,3DG170G,
BFR18价格
参考价格：￥1057.5021
型号：BFR1811P1 品牌： 备注：这里有BFR18多少钱，2024年最近7天走势，今日出价，今日竞价，BFR18批发/采购报价，BFR18行情走势销售排行榜，BFR18报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BFR18 | Medium Power Amplifiers and Switches 文件：146.76 Kbytes Page：1 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  |   |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) NPNSiliconRFTransistor •Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA •fT=7GHz F=2.1dBat900MHz | SIEMENS Siemens Ltd |  | | |
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA •fT=7GHz F=2.1dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) NPNSiliconRFTransistor •Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA •fT=7GHz F=2.1dBat900MHz | SIEMENS Siemens Ltd | | | |
NPN Silicon RF Transistor NPNSiliconRFTransistor •Forlow-poweramplifiersinmobile communicationsystems(pager)atcollector currentsfrom0.2mAto2.5mA •fT=7GHz F=2.1dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz | SIEMENS Siemens Ltd | | | |
NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA. | VishayVishay Siliconix 威世科技 |  | | |
NPN Silicon RF Transistor NPNSiliconRFTransistor Preliminarydata •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon NPN Planar RF Transistor Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT-490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditionto | VishayVishay Siliconix 威世科技 | | | |
Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA. | VishayVishay Siliconix 威世科技 | | | |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz | SIEMENS Siemens Ltd | | | |
NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA •fT=8GHz,NFmin=0.9dBat900MHz •EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads •Qualificationreport | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz | SIEMENS Siemens Ltd | | | |
NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. | VishayVishay Siliconix 威世科技 | | | |
Silicon NPN Planar RF Transistor Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos | VishayVishay Siliconix 威世科技 | | | |
Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. | VishayVishay Siliconix 威世科技 | | | |
isc Silicon NPN RF Transistor DESCRIPTION ·Forlownoiseandhighgainbroadbandamplifiers atcollectorcurrentsfrom1mAto20mA. ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Lownoisefigure ·Highpowergain | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHzF=1.2dBat900MHz | SIEMENS Siemens Ltd | | | |
NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz | SIEMENS Siemens Ltd | | | |
NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor NPNSiliconRFTransistor* •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz,F=0.9dBat900MHz *Shorttermdescription | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. | VishayVishay Siliconix 威世科技 | | | |
NPN Silicon RF Transistor Preliminarydata •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon NPN Planar RF Transistor Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos | VishayVishay Siliconix 威世科技 | | | |
Silicon NPN Planar RF Transistor Features •Lownoisefigure •Highpowergain Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. | VishayVishay Siliconix 威世科技 | | | |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz | SIEMENS Siemens Ltd | | | |
NPN Silicon RF Transistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：133.44 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：619.16 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：133.44 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：619.16 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：672.64 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：510.37 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：510.37 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：672.64 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：133.04 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：618.78 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：133.04 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：618.78 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：70.17 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon NPN Planar RF Transistor 文件：203.07 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | | |
Silicon NPN Planar RF Transistor 文件：203.07 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | | |
Silicon NPN Planar RF Transistor 文件：203.07 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | | |
NPN Silicon RF Transistor 文件：517.63 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：672.28 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：517.63 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：672.28 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 12V 8GHZ SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 射频 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：78.48 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：618.94 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
isc Silicon NPN RF Transistor 文件：286.19 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
NPN Silicon RF Transistor 文件：78.48 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：618.94 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPN Silicon RF Transistor 文件：140.84 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Low Noise Silicon Bipolar RF Transistor 文件：672.73 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
isc Silicon NPN RF Transistor 文件：287.01 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
NPN Silicon RF Transistor 文件：140.84 Kbytes Page：7 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BFR18产品属性
- 类型
描述
- 型号
BFR18
- 功能描述
Medium Power Amplifiers and Switches
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
02+ |
SOT23 |
1225 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
23+ |
SOT-23 |
45000 |
热卖优势现货 |
|||
INFINEON/英飞凌 |
24+ |
SOT23 |
159708 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
21+ |
SOT-23 |
600000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
Infineon(英飞凌) |
23+ |
SOT-323 |
104316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Infineon/英飞凌 |
22+ |
20000 |
全新、原装、现货 |
||||
Infineon(英飞凌) |
23+ |
SOT-23 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON/英飞凌 |
21+ |
NA |
79170 |
只做原装,假一罚十 |
|||
NXP/恩智浦 |
23+ |
SOT-523 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
INF |
21+ |
SOT-23 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
BFR18芯片相关品牌
BFR18规格书下载地址
BFR18参数引脚图相关
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BFR18数据表相关新闻
BFR181WH6327XTSA1
BFR181WH6327XTSA1
2024-1-3BFU520A
BFU520A
2023-5-19BFP640H6327XTSA1
RF晶体管NPN4.5V50mA40GHz200mW表面贴装型PG-SOT343-3D
2022-11-10BFP840FESD H6327 INFINEON/英飞凌
www.hfxcom.com
2021-12-30BFQ19SH6327
公司是一家大型电子元器件代理商、分销商。与国内外超过20多家大品牌生产商和代理商建立了长期合作关系。专门经营各类存储、单片机、逻辑、运放等IC芯片，MOS管，二三极管。主要经营品牌有ADI、TI、ON、NXP、ST、NS、ATMEL
2021-11-30BFR181WH6327 晶体管
BFR181WH6327晶体管
2021-3-23
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