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BFQ晶体管资料
BFQ别名:BFQ三极管、BFQ晶体管、BFQ晶体三极管
BFQ生产厂家:
BFQ制作材料:Si-PNP
BFQ性质:低频或音频放大 (LF)_功率放大 (L)
BFQ封装形式:贴片封装
BFQ极限工作电压:20V
BFQ最大电流允许值:3A
BFQ最大工作频率:<1MHZ或未知
BFQ引脚数:3
BFQ最大耗散功率:2W
BFQ放大倍数:
BFQ图片代号:H-100
BFQvtest:20
BFQhtest:999900
- BFQatest:3
BFQwtest:2
BFQ代换 BFQ用什么型号代替:2SB1308,
BFQ价格
参考价格:¥2.4998
型号:BFQ149,115 品牌:NXP 备注:这里有BFQ多少钱,2024年最近7天走势,今日出价,今日竞价,BFQ批发/采购报价,BFQ行情走势销售排行榜,BFQ报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
NPN video transistor DESCRIPTION NPNsilicontransistorina3-leadplasticSOT54package. FEATURES •Lowoutputcapacitance •Highdissipation •Highgainbandwidthproduct. APPLICATIONS •Bufferstageincolourmonitorsbetweenthevideoamplifierandtheinputofthevideomodule •Pre-s | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 6.5 GHz wideband transistor DESCRIPTION NPNwidebandtransistorina4-leaddual-emitterSOT172A2packagewithaceramiccap.Allleadsareisolatedfromthemountingbase. FEATURES •Optimumtemperatureprofileandexcellentreliabilitypropertiesensuredbyemitter-ballastingresistorsandapplicationofgoldsandwichm | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinafour-leaddual-emitterSOT122Aenvelopewithaceramiccap.Allleadsareisolatedfromthestud.Diffusedemitter-ballastingresistorsandtheapplicationofgoldsandwich metallizationensureanoptimumtemperatureprofileandexcellentreliabilitypropertie | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP 5 GHz wideband transistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalyzers,etc.,usingSMDtechnology. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP 5 GHz wideband transistor DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalysers,etc.,usingSMDtechnology. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
PNP video transistor DESCRIPTION PNPvideotransistorinaSOT54plasticpackage. FEATURES •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverbetweenvideoamplifierandvideomodule. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT54(TO-92)plasticpackage. FEATURES •Lowoutputcapacitance •Highgainbandwidth •Highcurrentapplicability •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverinhighresolutioncolour | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT32(TO-126)package. FEATURES •Lowoutputcapacitance •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverinhigh-resolutioncolourgraphicsmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT223plasticpackage. FEATURES •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Highcurrentapplicability •Surfacemounting. APPLICATIONS •Videoamplifiercascodedriver | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 1 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorhasextremelygoodintermodulationpropertiesandahighpowergain. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinaplasticSOT89envelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforMATVpurposes. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinaplasticSOT89envelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforMATVpurposes. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN 5 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforuseinUHFandmicrowaveamplifierssuchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzersetc. Thetransistorfeaturesverylowi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 5 GHz wideband transistor DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforuseinUHFandmicrowaveamplifierssuchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzersetc. Thetransistorfeaturesverylowi | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=7.5GHz F=1.3dBat900MHz | SIEMENS Siemens Ltd | |||
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259 | SIEMENS Siemens Ltd | |||
NPN Silicon RF Transistor NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationssystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN video transistor DESCRIPTION NPNsilicontransistorencapsulatedina3-leadplasticSOT54package. APPLICATIONS •Primarilyintendedforbufferstagesinhighresolutioncolourmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistor DESCRIPTION NPNsilicontransistorencapsulatedina3-leadplasticSOT32package. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistor NPNvideotransistor DESCRIPTION NPNsilicontransistorencapsulatedina3-leadplasticSOT128Bpackage. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistor DESCRIPTION NPNsilicontransistorencapsulatedina4-leadplasticSOT223package. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
TO-72 PNPSiliconTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
NPN video transistors DESCRIPTION NPNvideotransistorinaSOT54(TO-92)plasticpackage. PNPcomplements:BFQ251andBFQ251A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. AP | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistors DESCRIPTION NPNvideotransistorinaSOT54(TO-92)plasticpackage. PNPcomplements:BFQ251andBFQ251A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. AP | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistors DESCRIPTION NPNvideotransistorinaSOT32(TO-126)plasticpackage. PNPcomplements:BFQ252andBFQ252A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Buffer/d | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistors DESCRIPTION NPNvideotransistorinaSOT32(TO-126)plasticpackage. PNPcomplements:BFQ252andBFQ252A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Buffer/d | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT128B(TO-202)plasticpackage. PNPcomplement:BFQ255A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •CRTamplifierbuf | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistor DESCRIPTION NPNvideotransistorinaSOT128B(TO-202)plasticpackage. PNPcomplement:BFQ255A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •CRTamplifierbuf | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistors DESCRIPTION NPNvideotransistorinaSOT223plasticpackage.PNPcomplements:BFQ256andBFQ256A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Surfacemounting. APPLICATIONS | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistors DESCRIPTION NPNvideotransistorinaSOT223plasticpackage.PNPcomplements:BFQ256andBFQ256A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Surfacemounting. APPLICATIONS | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistor DESCRIPTION PNPsilicontransistorencapsulatedina3-leadplasticSOT54package. APPLICATIONS •Primarilyintendedforbufferstagesinhighresolutioncolourmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistor DESCRIPTION PNPsilicontransistorencapsulatedina3-leadplasticSOT32package. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistor DESCRIPTION PNPsilicontransistorencapsulatedina3-leadplasticSOT128Bpackage. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistor DESCRIPTION PNPsilicontransistorencapsulatedina4-leadplasticSOT223package. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistor DESCRIPTION PNPvideotransistorinaSOT54(TO-92)plasticpackage. NPNcomplement:BFQ231. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Buffer/driverinhigh | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistors DESCRIPTION PNPvideotransistorinaSOT32(TO-126)plasticpackage.NPNcomplements:BFQ232andBFQ232A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Optimumtemperatureprofile •Excellentreliabilityproperties. APPLICATIONS •Buffer/driverinhigh- | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistors DESCRIPTION PNPvideotransistorinaSOT32(TO-126)plasticpackage.NPNcomplements:BFQ232andBFQ232A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Optimumtemperatureprofile •Excellentreliabilityproperties. APPLICATIONS •Buffer/driverinhigh- | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistors DESCRIPTION PNPvideotransistorinaSOT128B(TO-202)plasticpackage. NPNcomplements:BFQ235andBFQ235A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistors DESCRIPTION PNPvideotransistorinaSOT128B(TO-202)plasticpackage. NPNcomplements:BFQ235andBFQ235A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistors DESCRIPTION PNPvideotransistorinaSOT223plasticpackage. NPNcomplements:BFQ236andBFQ236A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Surfacemounting. APPLICATION | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP video transistors DESCRIPTION PNPvideotransistorinaSOT223plasticpackage. NPNcomplements:BFQ236andBFQ236A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Surfacemounting. APPLICATION | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistors NPNvideotransistors DESCRIPTION NPNvideotransistorinaSOT32(TO-126)plasticpackage. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Optimumtemperatureprofile •Goodthermalstability •Excellentreliabilityproperties. APPLICATIONS •Buff | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN video transistors NPNvideotransistors DESCRIPTION NPNvideotransistorinaSOT32(TO-126)plasticpackage. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Optimumtemperatureprofile •Goodthermalstability •Excellentreliabilityproperties. APPLICATIONS •Buff | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 6 GHz wideband transistor DESCRIPTION SiliconNPNtransistormountedina4-leaddual-emitterSOT172A1.envelopewithaceramiccap.Allleadsareisolatedfromthemountingbase. ItisprimarilyintendedforuseinMATVandCATVamplifiers. FEATURES •Highpowergain •Emitter-ballastingresistorsforgoodthermalst | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz LowNoiseNPNSiliconMicrowaveTransistorupto4GHz | SIEMENS Siemens Ltd | |||
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) ●Forlow-noiseIFandbroadbandamplifiersupto1GHzatcollectorcurrentsfrom1mAto20mA. ●CECC-typeavailable:CECC50002/258. | SIEMENS Siemens Ltd | |||
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) ●Forlow-noiseIFandbroadbandamplifiersupto1GHzatcollectorcurrentsfrom1mAto20mA. ●CECC-typeavailable:CECC50002/258. | SIEMENS Siemens Ltd | |||
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION. | KECKEC CORPORATION KEC株式会社 | |||
NPN SILICON PLANAR VHF/UHF TRANSISTOR PARTMARKINGDETAILS BFQ31A–S4 BFQ31AR–S5 | Zetex Zetex Semiconductors | |||
NPN SILICON PLANAR VHF/UHF TRANSISTOR PARTMARKINGDETAILS BFQ31A–S4 BFQ31AR–S5 | Zetex Zetex Semiconductors | |||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorencapsulatedina4leadSOT122Aenvelopewithaceramiccap.Allleadsareisolatedfromthestud.ItisprimarilyintendedfordriverandfinalstagesinMATVsystemamplifiers.Itisalsosuitableforusein lowpowerbandIVandVequipment.Diffusedemitter-ba | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN 4 GHz wideband transistor DESCRIPTION NPNtransistorinaplasticSOT37 envelops,intendedforwideband amplificationapplications.The devicefeatureshighoutputvoltage capabilities. ASOTS5(TO-39)version (ref:ON4497)Isavailableon request. | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPN wideband dual transistor DESCRIPTION NPNwidebandtransistorinaSOT89 plasticpackage. FEATURES •Highgain •Highoutputvoltage •Lownoise •Goldmetallizationensuresexcellentreliability •Lowthermalresistance. APPLICATIONS •VHF,UHFandCATVamplifiers. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN wideband transistor DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES •Highgain •Highoutputvoltage •Lownoise •Goldmetallizationensuresexcellentreliability •Lowthermalresistance. APPLICATIONS •VHF,UHFandCATVamplifiers. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
isc Silicon NPN RF Transistor DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Silicon NPN RF Transistor DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |
BFQ产品属性
- 类型
描述
- 型号
BFQ
- 功能描述
两极晶体管 - BJT NPN Silicon RF TRANSISTOR
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
23+ |
NA/ |
3269 |
原装现货,当天可交货,原型号开票 |
|||
PHILIPS |
22+ |
高频管 |
350 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
PHILIPS/飞利浦 |
23+ |
345 |
现货供应 |
||||
NXP |
97+ |
N/A |
120 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PHILIPS/飞利浦 |
21+ |
SOT |
6000 |
全新原装 现货 价优 |
|||
PHILIPS/飞利浦 |
2022 |
TO-55 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
PHILIPS/飞利浦 |
22+ |
NA |
1120 |
中国航天工业部战略合作伙伴行业领导者 |
|||
PHI |
21+ |
SOT122A |
2 |
原装现货假一赔十 |
|||
- |
23+ |
90000 |
只做原厂渠道价格优势可提供技术支持 |
||||
NXP |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
BFQ规格书下载地址
BFQ参数引脚图相关
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- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- BFQ231A
- BFQ231
- BFQ22S
- BFQ226
- BFQ225
- BFQ222
- BFQ221
- BFQ22(S)
- BFQ19S
- BFQ194
- BFQ193
- BFQ19(P,S)
- BFQ19
- BFQ18A
- BFQ182
- BFQ181
- BFQ18(A)
- BFQ17(P)
- BFQ17
- BFQ166
- BFQ163
- BFQ162
- BFQ161
- BFQ151
- BFQ149
- BFQ136
- BFQ135
- BFQ134
- BFQ131
- BFPCTRL
- BFP96
- BFP93AW
- BFP93A
- BFP93
- BFP92AW
- BFP92A
- BFP92
- BFP91A
- BFP91(A)
- BFP90A
- BFP90(A)
- BFP843F
- BFP843
- BFP81
- BFP780
- BFP760
- BFP750
- BFP740F
- BFP740
- BFP722
- BFP721
- BFP720F
- BFP720
- BFP719
- BFP67W
- BFP67R
- BFP67
- BFP621
- BFP620
- BFP619
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