BFQ晶体管资料

  • BFQ别名:BFQ三极管、BFQ晶体管、BFQ晶体三极管

  • BFQ生产厂家

  • BFQ制作材料:Si-PNP

  • BFQ性质:低频或音频放大 (LF)_功率放大 (L)

  • BFQ封装形式:贴片封装

  • BFQ极限工作电压:20V

  • BFQ最大电流允许值:3A

  • BFQ最大工作频率:<1MHZ或未知

  • BFQ引脚数:3

  • BFQ最大耗散功率:2W

  • BFQ放大倍数

  • BFQ图片代号:H-100

  • BFQvtest:20

  • BFQhtest:999900

  • BFQatest:3

  • BFQwtest:2

  • BFQ代换 BFQ用什么型号代替:2SB1308,

BFQ价格

参考价格:¥2.4998

型号:BFQ149,115 品牌:NXP 备注:这里有BFQ多少钱,2024年最近7天走势,今日出价,今日竞价,BFQ批发/采购报价,BFQ行情走势销售排行榜,BFQ报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPN video transistor

DESCRIPTION NPNsilicontransistorina3-leadplasticSOT54package. FEATURES •Lowoutputcapacitance •Highdissipation •Highgainbandwidthproduct. APPLICATIONS •Bufferstageincolourmonitorsbetweenthevideoamplifierandtheinputofthevideomodule •Pre-s

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 6.5 GHz wideband transistor

DESCRIPTION NPNwidebandtransistorina4-leaddual-emitterSOT172A2packagewithaceramiccap.Allleadsareisolatedfromthemountingbase. FEATURES •Optimumtemperatureprofileandexcellentreliabilitypropertiesensuredbyemitter-ballastingresistorsandapplicationofgoldsandwichm

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 4 GHz wideband transistor

DESCRIPTION NPNtransistorinafour-leaddual-emitterSOT122Aenvelopewithaceramiccap.Allleadsareisolatedfromthestud.Diffusedemitter-ballastingresistorsandtheapplicationofgoldsandwich metallizationensureanoptimumtemperatureprofileandexcellentreliabilitypropertie

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP 5 GHz wideband transistor

DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalyzers,etc.,usingSMDtechnology.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP 5 GHz wideband transistor

DESCRIPTION PNPtransistorinaSOT89envelope.ItisintendedforuseinUHFapplicationssuchasbroadbandaerialamplifiers(30to860MHz)andinmicrowaveamplifierssuchasradarsystems,spectrumanalysers,etc.,usingSMDtechnology.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

PNP video transistor

DESCRIPTION PNPvideotransistorinaSOT54plasticpackage. FEATURES •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverbetweenvideoamplifierandvideomodule.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistor

DESCRIPTION NPNvideotransistorinaSOT54(TO-92)plasticpackage. FEATURES •Lowoutputcapacitance •Highgainbandwidth •Highcurrentapplicability •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverinhighresolutioncolour

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistor

DESCRIPTION NPNvideotransistorinaSOT32(TO-126)package. FEATURES •Lowoutputcapacitance •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Pre-stagedriverinhigh-resolutioncolourgraphicsmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistor

DESCRIPTION NPNvideotransistorinaSOT223plasticpackage. FEATURES •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Highcurrentapplicability •Surfacemounting. APPLICATIONS •Videoamplifiercascodedriver

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 1 GHz wideband transistor

DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorhasextremelygoodintermodulationpropertiesandahighpowergain.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 4 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT89envelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforMATVpurposes.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 4 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT89envelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforMATVpurposes.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN 5 GHz wideband transistor

DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforuseinUHFandmicrowaveamplifierssuchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzersetc. Thetransistorfeaturesverylowi

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 5 GHz wideband transistor

DESCRIPTION NPNtransistorinaSOT89plasticenvelopeintendedforapplicationinthickandthin-filmcircuits.ItisprimarilyintendedforuseinUHFandmicrowaveamplifierssuchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzersetc. Thetransistorfeaturesverylowi

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPNSiliconRFTransistor •Forlownoise,high-gainamplifiersupto2GHz •Forlinearbroadbandamplifiers •fT=7.5GHz F=1.3dBat900MHz

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and)

NPNSiliconRFTransistor •Forlownoise,lowdistortionbroadbandamplifiersinantennaandtelecommunicationssystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA •CECC-typeavailable:CECC50002/259

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon RF Transistor

NPNSiliconRFTransistor* •Forlownoise,lowdistortionbroadband amplifiersinantennaand telecommunicationssystemsupto1.5GHz atcollectorcurrentsfrom10mAto70mA •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPN video transistor

DESCRIPTION NPNsilicontransistorencapsulatedina3-leadplasticSOT54package. APPLICATIONS •Primarilyintendedforbufferstagesinhighresolutioncolourmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistor

DESCRIPTION NPNsilicontransistorencapsulatedina3-leadplasticSOT32package. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistor

NPNvideotransistor DESCRIPTION NPNsilicontransistorencapsulatedina3-leadplasticSOT128Bpackage. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistor

DESCRIPTION NPNsilicontransistorencapsulatedina4-leadplasticSOT223package. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

TO-72

PNPSiliconTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPN video transistors

DESCRIPTION NPNvideotransistorinaSOT54(TO-92)plasticpackage. PNPcomplements:BFQ251andBFQ251A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. AP

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistors

DESCRIPTION NPNvideotransistorinaSOT54(TO-92)plasticpackage. PNPcomplements:BFQ251andBFQ251A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. AP

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistors

DESCRIPTION NPNvideotransistorinaSOT32(TO-126)plasticpackage. PNPcomplements:BFQ252andBFQ252A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Buffer/d

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistors

DESCRIPTION NPNvideotransistorinaSOT32(TO-126)plasticpackage. PNPcomplements:BFQ252andBFQ252A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Buffer/d

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistor

DESCRIPTION NPNvideotransistorinaSOT128B(TO-202)plasticpackage. PNPcomplement:BFQ255A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •CRTamplifierbuf

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistor

DESCRIPTION NPNvideotransistorinaSOT128B(TO-202)plasticpackage. PNPcomplement:BFQ255A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •CRTamplifierbuf

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistors

DESCRIPTION NPNvideotransistorinaSOT223plasticpackage.PNPcomplements:BFQ256andBFQ256A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Surfacemounting. APPLICATIONS

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistors

DESCRIPTION NPNvideotransistorinaSOT223plasticpackage.PNPcomplements:BFQ256andBFQ256A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Surfacemounting. APPLICATIONS

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistor

DESCRIPTION PNPsilicontransistorencapsulatedina3-leadplasticSOT54package. APPLICATIONS •Primarilyintendedforbufferstagesinhighresolutioncolourmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistor

DESCRIPTION PNPsilicontransistorencapsulatedina3-leadplasticSOT32package. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistor

DESCRIPTION PNPsilicontransistorencapsulatedina3-leadplasticSOT128Bpackage. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistor

DESCRIPTION PNPsilicontransistorencapsulatedina4-leadplasticSOT223package. APPLICATIONS •Primarilyintendedforcascodeoutputandbufferstagesinhighresolutioncolourmonitors.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistor

DESCRIPTION PNPvideotransistorinaSOT54(TO-92)plasticpackage. NPNcomplement:BFQ231. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Buffer/driverinhigh

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistors

DESCRIPTION PNPvideotransistorinaSOT32(TO-126)plasticpackage.NPNcomplements:BFQ232andBFQ232A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Optimumtemperatureprofile •Excellentreliabilityproperties. APPLICATIONS •Buffer/driverinhigh-

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistors

DESCRIPTION PNPvideotransistorinaSOT32(TO-126)plasticpackage.NPNcomplements:BFQ232andBFQ232A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Optimumtemperatureprofile •Excellentreliabilityproperties. APPLICATIONS •Buffer/driverinhigh-

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistors

DESCRIPTION PNPvideotransistorinaSOT128B(TO-202)plasticpackage. NPNcomplements:BFQ235andBFQ235A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistors

DESCRIPTION PNPvideotransistorinaSOT128B(TO-202)plasticpackage. NPNcomplements:BFQ235andBFQ235A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistors

DESCRIPTION PNPvideotransistorinaSOT223plasticpackage. NPNcomplements:BFQ236andBFQ236A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Surfacemounting. APPLICATION

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP video transistors

DESCRIPTION PNPvideotransistorinaSOT223plasticpackage. NPNcomplements:BFQ236andBFQ236A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability •Surfacemounting. APPLICATION

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistors

NPNvideotransistors DESCRIPTION NPNvideotransistorinaSOT32(TO-126)plasticpackage. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Optimumtemperatureprofile •Goodthermalstability •Excellentreliabilityproperties. APPLICATIONS •Buff

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN video transistors

NPNvideotransistors DESCRIPTION NPNvideotransistorinaSOT32(TO-126)plasticpackage. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Optimumtemperatureprofile •Goodthermalstability •Excellentreliabilityproperties. APPLICATIONS •Buff

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 6 GHz wideband transistor

DESCRIPTION SiliconNPNtransistormountedina4-leaddual-emitterSOT172A1.envelopewithaceramiccap.Allleadsareisolatedfromthemountingbase. ItisprimarilyintendedforuseinMATVandCATVamplifiers. FEATURES •Highpowergain •Emitter-ballastingresistorsforgoodthermalst

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz

LowNoiseNPNSiliconMicrowaveTransistorupto4GHz

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

●Forlow-noiseIFandbroadbandamplifiersupto1GHzatcollectorcurrentsfrom1mAto20mA. ●CECC-typeavailable:CECC50002/258.

SIEMENS

Siemens Ltd

SIEMENS

NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

●Forlow-noiseIFandbroadbandamplifiersupto1GHzatcollectorcurrentsfrom1mAto20mA. ●CECC-typeavailable:CECC50002/258.

SIEMENS

Siemens Ltd

SIEMENS

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION.

KECKEC CORPORATION

KEC株式会社

KEC

NPN SILICON PLANAR VHF/UHF TRANSISTOR

PARTMARKINGDETAILS BFQ31A–S4 BFQ31AR–S5

Zetex

Zetex Semiconductors

Zetex

NPN SILICON PLANAR VHF/UHF TRANSISTOR

PARTMARKINGDETAILS BFQ31A–S4 BFQ31AR–S5

Zetex

Zetex Semiconductors

Zetex

NPN 4 GHz wideband transistor

DESCRIPTION NPNtransistorencapsulatedina4leadSOT122Aenvelopewithaceramiccap.Allleadsareisolatedfromthestud.ItisprimarilyintendedfordriverandfinalstagesinMATVsystemamplifiers.Itisalsosuitableforusein lowpowerbandIVandVequipment.Diffusedemitter-ba

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN 4 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT37 envelops,intendedforwideband amplificationapplications.The devicefeatureshighoutputvoltage capabilities. ASOTS5(TO-39)version (ref:ON4497)Isavailableon request.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPN wideband dual transistor

DESCRIPTION NPNwidebandtransistorinaSOT89 plasticpackage. FEATURES •Highgain •Highoutputvoltage •Lownoise •Goldmetallizationensuresexcellentreliability •Lowthermalresistance. APPLICATIONS •VHF,UHFandCATVamplifiers.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN wideband transistor

DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES •Highgain •Highoutputvoltage •Lownoise •Goldmetallizationensuresexcellentreliability •Lowthermalresistance. APPLICATIONS •VHF,UHFandCATVamplifiers.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

isc Silicon NPN RF Transistor

DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Silicon NPN RF Transistor

DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

BFQ产品属性

  • 类型

    描述

  • 型号

    BFQ

  • 功能描述

    两极晶体管 - BJT NPN Silicon RF TRANSISTOR

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-5-21 18:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHILIPS/飞利浦
23+
NA/
3269
原装现货,当天可交货,原型号开票
PHILIPS
22+
高频管
350
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
PHILIPS/飞利浦
23+
345
现货供应
NXP
97+
N/A
120
一级代理,专注军工、汽车、医疗、工业、新能源、电力
PHILIPS/飞利浦
21+
SOT
6000
全新原装 现货 价优
PHILIPS/飞利浦
2022
TO-55
80000
原装现货,OEM渠道,欢迎咨询
PHILIPS/飞利浦
22+
NA
1120
中国航天工业部战略合作伙伴行业领导者
PHI
21+
SOT122A
2
原装现货假一赔十
-
23+
90000
只做原厂渠道价格优势可提供技术支持
NXP
589220
16余年资质 绝对原盒原盘 更多数量

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  • RECOM
  • SIEMENS
  • WILLOW

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