位置：首页 > IC中文资料第1535页 > BF120
BF120晶体管资料
BF120别名：BF120三极管、BF120晶体管、BF120晶体三极管
BF120生产厂家：德国椤茨标准电器公司
BF120制作材料：Si-NPN
BF120性质：电视 （TV）_行输出 （HA）_振荡级 （O）
BF120封装形式：直插封装
BF120极限工作电压：220V
BF120最大电流允许值：0.05A
BF120最大工作频率：<1MHZ或未知
BF120引脚数：3
BF120最大耗散功率：0.3W
BF120放大倍数：
BF120图片代号：D-8
BF120vtest：220
BF120htest：999900
- BF120atest：.05
BF120wtest：.3
BF120代换 BF120用什么型号代替：BF298,BF299,BF258,BF259,BF337,BF422,BF658,3DG170J,
BF120价格
参考价格：￥0.2860
型号：BF1201R 品牌：NXP/PHILIPS 备注：这里有BF120多少钱，2024年最近7天走势，今日出价，今日竞价，BF120批发/采购报价，BF120行情走势销售排行榜，BF120报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BF120 | 2.0mmPitchPinHeaderDualRow,SurfaceMount 文件：116.1 Kbytes Page：1 Pages | GCT GCT Semiconductor |  |   |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
N-channeldual-gatePoLoMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
N-channeldual-gatePoLoMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOS-FET DESCRIPTION TheBF1203isacombinationoftwodifferentdualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected. InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC. Integrateddiodesbetwe | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOS-FET DESCRIPTION TheBF1204isacombinationoftwoequaldualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC.Integrateddiodesbetweent | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOS-FET DESCRIPTION TheBF1205isacombinationoftwoequaldualgateMOS-FETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierb.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabil | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
DualN-channeldualgateMOS-FET Generaldescription TheBF1205CisacombinationoftwodualgateMOS-FETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierb. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCst | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
DualN-channeldual-gateMOS-FET DESCRIPTION TheBF1206isacombinationoftwodifferentdualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC.Integrateddiodesbetween | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOSFET Generaldescription TheBF1206FisacombinationoftwodifferentdualgateMOSFETamplifierswithsharedsourceandgate2leads. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDirectCurrent(DC)stabilizationandaverygoodcross-modulationperformanceduringAutom | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
DualN-channeldualgateMOSFET Generaldescription TheBF1207isacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leadsandanintegratedswitch. Features ■Twolownoisegaincontrolledamplifiersinasinglepackage.Onewithafullyintegratedbiasandonewithpartlyintegratedbias ■Intern | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOSFET Generaldescription TheBF1208isacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierB. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabil | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOSFET Generaldescription TheBF1208DisacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierB. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：127.23 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 |  | | |
N-channeldual-gatePoLoMOS-FETs 文件：127.23 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
封装/外壳：SOT-143R 包装：卷带（TR） 描述：MOSFET 2N-CH 10V 30MA SOT143R 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET 2N-CH 10V 30MA SOT343R 分立半导体产品 晶体管 - FET，MOSFET - 射频 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：189.86 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：189.86 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：189.86 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：129.289 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：129.289 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：189.86 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：189.86 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：189.86 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
N-channeldual-gatePoLoMOS-FETs 文件：189.86 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
DualN-channeldualgateMOS-FETs 文件：172.69 Kbytes Page：20 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
DualN-channeldualgateMOS-FETs 文件：172.69 Kbytes Page：20 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
DualN-channeldualgateMOS-FET 文件：172.69 Kbytes Page：20 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. |  | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DCBlowerFan120x120x32mm 文件：399.56 Kbytes Page：1 Pages | COOLCOXCoolCox Limited All rights reserved. COOLCOXCoolCox Limited All rights reserved. | | | |
DualN-channeldualgateMOS-FET 文件：116.52 Kbytes Page：12 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
DualN-channeldualgateMOS-FET 文件：116.52 Kbytes Page：12 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | | |
DualN-channeldualgateMOS-FET 文件：190.74 Kbytes Page：24 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | | |
BF120产品属性
- 类型
描述
- 型号
BF120
- 制造商
Siemens
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA |
05+ |
SOT143B |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEXPERIA |
2023+ |
SOT143B |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NXP/恩智浦 |
23+ |
SOT-343 |
33500 |
全新进口原装现货,假一罚十 |
|||
NXP/恩智浦 |
SC706 |
7906200 |
|||||
NXP/恩智浦 |
21+ |
SOT-363 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
NXP/恩智浦 |
2019+ |
SOT343 |
36000 |
原盒原包装 可BOM配套 |
|||
NXP(恩智浦) |
23+ |
标准封装 |
20727 |
全新原装正品/价格优惠/质量保障 |
|||
NXP/恩智浦 |
22+ |
SOT143 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
NXP/恩智浦 |
23+ |
SOT-363 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
一级代理 |
23+ |
N/A |
65700 |
一级代理放心采购 |
BF120芯片相关品牌
BF120规格书下载地址
BF120参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BF154
- BF153
- BF152
- BF140S
- BF140R
- BF140D
- BF140A
- BF140
- BF138
- BF137
- BF136
- BF134
- BF133
- BF132
- BF131
- BF130
- BF127
- BF125
- BF123
- BF1215
- BF1214
- BF1212R
- BF1212
- BF1211R
- BF1211
- BF1210
- BF121
- BF1208D
- BF1208
- BF1207
- BF1206F
- BF1206
- BF1205C
- BF1205
- BF1204
- BF1203
- BF1202R
- BF1202
- BF1201R
- BF1201
- BF119
- BF118
- BF117
- BF115
- BF114
- BF1118W
- BF1118R
- BF1118
- BF111
- BF1109R
- BF1109
- BF1108W
- BF1108R
- BF1108
- BF1107W
- BF1107
- BF1105R
- BF1105
- BF1102R
- BF1102
- BF1101R
- BF1101
- BF1100R
- BF1100
- BF110
- BF10S
- BF109
- BF108
- BF1
- BDY99
- BDY98
- BDY97
- BDY96
- BDY95
- BDY94
- BDY93
- BDY92
- BDY91
- BDY90
BF120数据表相关新闻
BD9F500QUZ-E2
进口代理
2024-4-18BE-A301
BE-A301
2022-3-15BF7612CM28，40k现货，批次21+
BF7612CM28，40k现货，批次21+
2021-11-18BF7612CM28，BYD，40K，21+
BF7612CM28，BYD，40K，21+
2021-11-10BF862215
JFET-25V射频结栅场效应晶体管(RFJFET)晶体管,SMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFET射频结栅场效应晶体管(RFJFET)晶体管,GaNSiCSMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFETN-Channel射频结栅场效应晶体管(RFJFET)晶体管,MESFET射
2020-8-5BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
ROHMSemiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC/DC转换器
2020-6-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
