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BF10晶体管资料
BF108别名：BF108三极管、BF108晶体管、BF108晶体三极管
BF108生产厂家：DIT
BF108制作材料：Si-NPN
BF108性质：视频输出 （Vid）
BF108封装形式：直插封装
BF108极限工作电压：140V
BF108最大电流允许值：0.15A
BF108最大工作频率：180MHZ
BF108引脚数：3
BF108最大耗散功率：0.86W
BF108放大倍数：
BF108图片代号：C-40
BF108vtest：140
BF108htest：180000000
- BF108atest：.15
BF108wtest：.86
BF108代换 BF108用什么型号代替：BF257,BF258,BF259,BF336,BF657,BF658,BF659,2N5058,2N5059,3DG161C,
BF10价格
参考价格：￥0.3640
型号：BF1005R 品牌：SIEMENS 备注：这里有BF10多少钱，2024年最近7天走势，今日出价，今日竞价，BF10批发/采购报价，BF10行情走势销售排行榜，BF10报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedstabilizedbiasnetwork | SIEMENSSiemens Ltd 西门子德国西门子股份公司 |  |   | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedstabilizedbiasnetwork | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage9V •Integratedstabilizedbiasnetwork | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstagesupto1GHz •Operatingvoltage9V •Integratedbiasnetwork | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstageupto1GHz •Operatingvoltage9V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolled inputstageupto1GHz •Operatingvoltage9V •Integratedbiasingnetwork •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode Forlownoise,highgaincontrolled inputstagesupto1GHz Operatingvoltage9V Integratedbiasnetwork | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage12V •Integratedstabilizedbiasnetwork | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) SiliconN-ChannelMOSFETTetrode •Forlownoise,highgaincontrolledinputstagesupto1GHz •Operatingvoltage5V •Integratedstabilizedbiasnetwork | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) SILICONN-CHANNELMOSFETTETRODE •Forlow-noise,gain-controlledinputstagesupto1GHz •Operatingvoltage12V •IntegratedbiasNetwork | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
2.0mm Pitch Pin Header Dual Row, Surface Mount 文件：116.1 Kbytes Page：1 Pages | GCT GCT Semiconductor |  | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
2.00mm Pitch Socket,Dual Row,Surface Mount, 4.3mm or 4.6mm Profile, Dual Entry 文件：124.13 Kbytes Page：1 Pages | GCT GCT Semiconductor | | | |
Silicon N-Channel MOSFET Tetrode 文件：84.5 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode 文件：84.5 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode 文件：84.5 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode 文件：85.55 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode 文件：85.55 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-253-4，TO-253AA 包装：带 描述：MOSFET N-CH 8V 25MA SOT-143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-253-4，TO-253AA 包装：带 描述：MOSFET N-CH 8V 25MA SOT-143 分立半导体产品 晶体管 - FET，MOSFET - 射频 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode 文件：85.55 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Silicon N-Channel MOSFET Tetrode 文件：84.46 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BF10产品属性
- 类型
描述
- 型号
BF10
- 制造商
General Tools
- 功能描述
BF10 AC Circuit Breaker Finder
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
标准封装 |
13241 |
原厂渠道供应,大量现货,原型号开票。 |
|||
BYD |
2016+ |
SOT23-5 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON/英飞凌 |
24+ |
SOT-143 |
159794 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
24+ |
SOT143 |
45000 |
热卖优势现货 |
|||
BYD |
22+ |
SOT23-5 |
8550 |
只做原装正品假一赔十!正规渠道订货! |
|||
INFINEO |
21+ |
SOT143 |
12588 |
原装正品,自己库存 假一罚十 |
|||
INFINEON |
2022 |
SOT143 |
10768 |
原厂原装正品,价格超越代理 |
|||
INFINEON |
23+ |
SOT-143 |
7936 |
||||
ACX/璟德 |
23+ |
SMD |
9784 |
全新原装正品公司现货可免费送样可含税可追溯-可BOM配 |
|||
INFINEON |
03+ |
SOT143 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
BF10芯片相关品牌
BF10规格书下载地址
BF10参数引脚图相关
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BF10数据表相关新闻
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进口代理
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2021-11-10BF862215
JFET-25V射频结栅场效应晶体管(RFJFET)晶体管,SMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFET射频结栅场效应晶体管(RFJFET)晶体管,GaNSiCSMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFETN-Channel射频结栅场效应晶体管(RFJFET)晶体管,MESFET射
2020-8-5BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
ROHMSemiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC/DC转换器
2020-6-9
DdatasheetPDF页码索引
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