BD237晶体管资料

  • BD237(-6...-16)别名:BD237(-6...-16)三极管、BD237(-6...-16)晶体管、BD237(-6...-16)晶体三极管

  • BD237(-6...-16)生产厂家:德国AEG公司_德国椤茨标准电器公司_美国摩托罗拉半

  • BD237(-6...-16)制作材料:Si-NPN

  • BD237(-6...-16)性质:低频或音频放大 (LF)_功率放大 (L)

  • BD237(-6...-16)封装形式:直插封装

  • BD237(-6...-16)极限工作电压:100V

  • BD237(-6...-16)最大电流允许值:2A

  • BD237(-6...-16)最大工作频率:<1MHZ或未知

  • BD237(-6...-16)引脚数:3

  • BD237(-6...-16)最大耗散功率:25W

  • BD237(-6...-16)放大倍数

  • BD237(-6...-16)图片代号:B-21

  • BD237(-6...-16)vtest:100

  • BD237(-6...-16)htest:999900

  • BD237(-6...-16)atest:2

  • BD237(-6...-16)wtest:25

  • BD237(-6...-16)代换 BD237(-6...-16)用什么型号代替:BD179,BD379,BD441,3DD61D,

BD237价格

参考价格:¥0.5997

型号:BD237 品牌:STMicroelectronics 备注:这里有BD237多少钱,2024年最近7天走势,今日出价,今日竞价,BD237批发/采购报价,BD237行情走势销售排行榜,BD237报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BD237

PlasticMediumPowerSiliconNPNTransistor

PlasticMediumPowerSiliconNPNTransistor ...designedforusein5.0to10Wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=40(Min)@IC=0.15Adc

MotorolaMotorola, Inc

摩托罗拉

Motorola
BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD237

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
BD237

TO-126Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
BD237

NPNEpitaxialPlanarTransistors

NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
BD237

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD237

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD237

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
BD237

LowvoltageNPNpowertransistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD237

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
BD237

NPNpowertransistors

Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypesareBD236andBD238respectively. Features ■NPNtransistors Applications ■Audio,

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD237

TO-126Plastic-EncapsulateTransistors

FEATURES ComplementtoBD234/BD236/BD238respectively

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
BD237

80V,NPNTRANSISTORS

DESCRIPTION TheUTCBD237isanNPNtransistor.itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollector-emitterbreakdownvoltage,etc. FEATURES *ComplementtoUTCBD238respectively *Highcollector-emitterbreakdownvoltage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BD237

EPITAXIALSILICONPOWERTRANSISTORS

EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications

CDIL

CDIL

CDIL
BD237

NPNPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •PowerDissipation:PCM=1.25W,Ta=25°C •CollectorCurrent:IC=2A •ComplementtoBD234/236/238respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Epoxy

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BD237

TRANSISTOR(NPN)

FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
BD237

iscSiliconNPNPowerTransistor

DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD237

SiliconNPNtransistorinaTO-126PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features ComplementarypairwithBD238. Applications Mediumpowerlinearandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
BD237

SiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
BD237

GERMANIOVETRANZISTORY

文件:1.9422 Mbytes Page:14 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
BD237

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BD237

SiliconNPNPowerTransistors

文件:102.42 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
BD237

COMPLEMENTARYSILICONPOWERTRANSISTORS

文件:265.99 Kbytes Page:5 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD237

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 2A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DESCRIPTION TheUTCBD2378isacomplementaryNPN/PNPsmallsignalsurfacemounttransistor.It’ssuitableforlowpoweramplificationandswitch. FEATURES *EpitaxialPlanarDieConstruction *Extremely-SmallSurfaceMountPackage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DESCRIPTION TheUTCBD2378isacomplementaryNPN/PNPsmallsignalsurfacemounttransistor.It’ssuitableforlowpoweramplificationandswitch. FEATURES *EpitaxialPlanarDieConstruction *Extremely-SmallSurfaceMountPackage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DESCRIPTION TheUTCBD2378isacomplementaryNPN/PNPsmallsignalsurfacemounttransistor.It’ssuitableforlowpoweramplificationandswitch. FEATURES *EpitaxialPlanarDieConstruction *Extremely-SmallSurfaceMountPackage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedformediumpowerlinearandswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PlasticMediumPowerBipolarTransistors

PlasticMediumPowerBipolarTransistors Designedforusein5.0to10Waudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. Features •DCCurrentGain−hFE=40(Min)@IC=0.15Adc •EpoxyMeetsUL94V0@0.125in •ESDRatings:HumanBodyModel,3B;>

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

80V,NPNTRANSISTORS

DESCRIPTION TheUTCBD237isanNPNtransistor.itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollector-emitterbreakdownvoltage,etc. FEATURES *ComplementtoUTCBD238respectively *Highcollector-emitterbreakdownvoltage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

80V,NPNTRANSISTORS

DESCRIPTION TheUTCBD237isanNPNtransistor.itusesUTC’sadvancedtechnologytoprovidecustomerswithhighcollector-emitterbreakdownvoltage,etc. FEATURES *ComplementtoUTCBD238respectively *Highcollector-emitterbreakdownvoltage

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

EPITAXIALSILICONPOWERTRANSISTORS

EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications

CDIL

CDIL

CDIL

NPNEPITAXIALSILICONPOWERTRANSISTOR

NPNEPITAXIALSILICONPOWERTRANSISTOR IntendedforuseinMediumPowerLinearSwitchingApplications TO126PlasticPackage

CDIL

CDIL

CDIL

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

TO-126Plastic-EncapsulateTransistors

FEATURES ComplementtoBD234/BD236/BD238respectively

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

80V,NPNTRANSISTORS

文件:122.7 Kbytes Page:3 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACE

文件:105.6 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

COMPLEMENTARYNPN/PNPSMALLSIGNALSURFACE

文件:105.6 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS NPN 80V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

5VPoweredCMOSRS-232Drivers/Receivers

GENERALDESCRIPTION TheADM2xxfamilyoflinedrivers/receiversisintendedforallEIA-232-EandV.28communicationsinterfaces,especiallyinapplicationswhere±12Visnotavailable.TheADM223,ADM230L,ADM235L,ADM236LandADM241Lfeaturealowpowershutdownmodethatreducespowerdissipa

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

5VPoweredCMOSRS-232Drivers/Receivers

GENERALDESCRIPTION TheADM2xxfamilyoflinedrivers/receiversisintendedforallEIA-232-EandV.28communicationsinterfaces,especiallyinapplicationswhere±12Visnotavailable.TheADM223,ADM230L,ADM235L,ADM236LandADM241Lfeaturealowpowershutdownmodethatreducespowerdissipa

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

5VPoweredCMOSRS-232Drivers/Receivers

文件:363.69 Kbytes Page:11 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

5V-PoweredCMOSRS-232Drivers/Receivers

文件:304.17 Kbytes Page:20 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

5V-PoweredCMOSRS-232Drivers/Receivers

文件:281.33 Kbytes Page:20 Pages

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

BD237产品属性

  • 类型

    描述

  • 型号

    BD237

  • 功能描述

    两极晶体管 - BJT NPN General Purpose

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-27 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
长电
2022+
7600
原厂原装,假一罚十
ST/意法
22+
TO126
128038
郑重承诺只做原装进口现货
ON
1305+
TO-225
12000
公司特价原装现货
ST/意法半导体
SOT-32-3
6000
ON/安森美
22+
NA
3000
可订货,请确认
ST/意法半导体
SOT-32-3
6000
PTIF
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
22+
TO126
100000
代理渠道/只做原装/可含税
ST/意法半导体
21+
SOT-32-3
8800
公司只做原装正品
ON
2021/27
1000

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