BCV晶体管资料

  • BCV26别名:BCV26三极管、BCV26晶体管、BCV26晶体三极管

  • BCV26生产厂家:德国西门子AG公司

  • BCV26制作材料:Si-P+Darl

  • BCV26性质:表面帖装型 (SMD)

  • BCV26封装形式:贴片封装

  • BCV26极限工作电压:40V

  • BCV26最大电流允许值:0.5A

  • BCV26最大工作频率:200MHZ

  • BCV26引脚数:3

  • BCV26最大耗散功率:0.36W

  • BCV26放大倍数:β>20000

  • BCV26图片代号:H-15

  • BCV26vtest:40

  • BCV26htest:200000000

  • BCV26atest:.5

  • BCV26wtest:.36

  • BCV26代换 BCV26用什么型号代替:BCV46,

BCV价格

参考价格:¥0.1514

型号:BCV26 品牌:Fairchild 备注:这里有BCV多少钱,2024年最近7天走势,今日出价,今日竞价,BCV批发/采购报价,BCV行情走势销售排行榜,BCV报价。
型号 功能描述 生产厂家&企业 LOGO 操作

PNP Darlington transistors

DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPE-BCV26-BCV27 BCV46-BCV47

Zetex

Zetex Semiconductors

Zetex

PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV27,BCV47(NPN)

SIEMENS

Siemens Ltd

SIEMENS

PNP Darlington Transistor

PNPDarlingtonTransistor Thisdeviceisdesignedforapplicationsrequiringextremelyhighcurrentgainatcurrentsto800mA.SourcedfromProcess61.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PNP Silicon Darlington Transistors

PNPSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV27,BCV47(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

PNP Darlington transistors

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage.NPNcomplements:BCV27andBCV47.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPE–BCV26-BCV27 BCV46-BCV47 PARTMARKINGDETAILS–BCV26-ZFD BCV46-ZFE

DIODESDiodes Incorporated

达尔科技

DIODES

PNP Darlington Transistors

PNPDarlingtonTransistors forpreamplifierinputapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

PNP Darlington transistors

DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN Darlington Transistors

NPNDarlingtonTransistors forpreamplifierinputapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

NPN Darlington transistors

DESCRIPTION NPNDarlingtontransistorinaSOT23plasticpackage. PNPcomplements:BCV26andBCV46. FEATURES •Mediumcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *HighVCEO *Lowsaturationvoltage

Zetex

Zetex Semiconductors

Zetex

NPN Silicon Darlington Transistors (For general AF applications High collector current)

NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV26,BCV46(PNP)

SIEMENS

Siemens Ltd

SIEMENS

NPN Darlington Transistor

NPNDarlingtonTransistor Thisdeviceisdesignedforapplicationsrequiringextremelyhighcurrentgainatcollectorcurrentsto1.0A.SourcedfromProcess05.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Surface mount Si-Epitaxial PlanarTransistors

•Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

TRANSISTOR (NPN)

FEATURES ●HighCollectorCurrent ●HighCurrentGain

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

NPN Darlington Plastic Encapsulated Transistor

FEATURES ●ForgeneralAFapplicationhighcollectorcurrent ●Highcurrentgain

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPN Silicon Darlington Transistors

NPNSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV26,BCV46(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPN Darlington transistors

DESCRIPTION NPNDarlingtontransistorinaSOT23plasticpackage. PNPcomplements:BCV26andBCV46. FEATURES •Mediumcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *HighVCEO *Lowsaturationvoltage

DIODESDiodes Incorporated

达尔科技

DIODES

SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *HighVCEO *Lowsaturationvoltage

Zetex

Zetex Semiconductors

Zetex

NPN Surface Mount Darlington Transistor

Features •HighCollectorCurrent •HighCurrentGain •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •M

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●HighCurrentGain

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

NPN Darlington Transistors

NPNDarlingtonTransistors forpreamplifierinputapplications

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

DARLINGTON TRANSISTOR (NPN)

DARLINGTONTRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●HighCurrentGain

FS

First Silicon Co., Ltd

FS

NPN Darlington Transistors

NPNDarlingtonTransistors Features ●HighCollectorCurrent. ●HighCurrentGain.

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI

NPN Darlington Amplifier Transistor

FEATURES ●ComplementarytoBCV26,BCV46. ●Highcollectorcurrent. ●Highcurrentgain. ●ForgeneralAFapplications. ●Complementarytypes:BCV26,BCV46 APPLICATIONS ●NPNsilicondarlingtontransistor.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SOT-23 Plastic-Encapsulate Transistors

FEATURES HighCollectorCurrent HighCurrentGain

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPN Darlington transistor

1.Generaldescription NPNDarlingtontransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:BCV26 2.Featuresandbenefits •Mediumcurrentof500mA •Lowvoltageof30V •HighDCcurrentgainofminimum4000 •AEC-Q101qualified 3.App

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

PNP Darlington transistors

DESCRIPTION PNPDarlingtontransistorinaSOT89plasticpackage. NPNcomplements:BCV29andBCV49. FEATURES •VeryhighDCcurrentgain(min.10000) •Highcurrent(max.500mA) •Lowvoltage(max.60V). APPLICATIONS •Whereveryhighamplificationisrequired.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP SILICON DARLINGTON TRANSISTOR

SOT89PNPSILICONDARLINGTONTRANSISTOR COMPLEMENTARYTYPE–BCV29 PARTMARKINGDETAIL–ED

Zetex

Zetex Semiconductors

Zetex

PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV29,BCV49(NPN)

SIEMENS

Siemens Ltd

SIEMENS

PNP Silicon Darlington Transistors

PNPSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV29,BCV49(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

PNP Darlington transistors

DESCRIPTION PNPDarlingtontransistorinaSOT89plasticpackage. NPNcomplements:BCV29andBCV49. FEATURES •VeryhighDCcurrentgain(min.10000) •Highcurrent(max.500mA) •Lowvoltage(max.60V). APPLICATIONS •Whereveryhighamplificationisrequired.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN Darlington transistors

DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemountSOT89plasticpackage.PNPcomplements:BCV28andBCV48. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN SILICON PLANAR DARLINGTON TRANSISTOR

SOT89NPNSILICONPLANARDARLINGTONTRANSISTOR COMPLEMENTARYTYPE–BCV28 PARTMARKINGDETAIL–EF

Zetex

Zetex Semiconductors

Zetex

NPN Silicon Darlington Transistors (For general AF applications High collector current)

NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV28,BCV48(PNP)

SIEMENS

Siemens Ltd

SIEMENS

NPN Darlington transistors

DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemountSOT89plasticpackage.PNPcomplements:BCV28andBCV48. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

NPN Darlington transistors

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemountSOT89plasticpackage.PNPcomplements:BCV28andBCV48.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN Darlington transistors

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemount SOT89plasticpackage.PNPcomplements:BCV28and BCV48.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

NPN Silicon Darlington Transistors

NPNSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV28,BCV48(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPN Darlington transistors

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemount SOT89plasticpackage.PNPcomplements:BCV28and BCV48.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

PNP Darlington transistors

DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPE-BCV26-BCV27 BCV46-BCV47

Zetex

Zetex Semiconductors

Zetex

PNP Silicon Darlington Transistors (For general AF applications High collector current)

PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV27,BCV47(NPN)

SIEMENS

Siemens Ltd

SIEMENS

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

PNP Silicon Darlington Transistors

PNPSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV27,BCV47(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

PNP Darlington Transistors

PNPDarlingtonTransistors forpreamplifierinputapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

PNP Darlington transistors

DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

PNP Darlington transistors

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage.NPNcomplements:BCV27andBCV47.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPE–BCV26-BCV27 BCV46-BCV47 PARTMARKINGDETAILS–BCV26-ZFD BCV46-ZFE

DIODESDiodes Incorporated

达尔科技

DIODES

60V PNP DARLINGTON TRANSISTOR IN SOT23

Features •BVCEO>-60V •DarlingtonTransistorhFE>10k@100mAforhighgain •IC=-500mAHighContinuousCollectorCurrent •ComplementaryDarlingtonPNPType:BCV47 •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

DIODESDiodes Incorporated

达尔科技

DIODES

PNP Darlington transistor

1.Generaldescription PNPDarlingtontransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:BCV47-Q 2.Featuresandbenefits •Highcurrent •Highcurrentgain •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplicatio

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

60V PNP DARLINGTON TRANSISTOR IN SOT23

Features •BVCEO>-60V •DarlingtonTransistorhFE>10k@100mAforhighgain •IC=-500mAHighContinuousCollectorCurrent •ComplementaryDarlingtonPNPType:BCV47 •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

DIODESDiodes Incorporated

达尔科技

DIODES

60V PNP DARLINGTON TRANSISTOR IN SOT23

Features •BVCEO>-60V •DarlingtonTransistorhFE>10k@100mAforhighgain •IC=-500mAHighContinuousCollectorCurrent •ComplementaryDarlingtonPNPType:BCV47 •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie

DIODESDiodes Incorporated

达尔科技

DIODES

NPN Darlington transistors

DESCRIPTION NPNDarlingtontransistorinaSOT23plasticpackage. PNPcomplements:BCV26andBCV46. FEATURES •Mediumcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

NPN SILICON PLANAR DARLINGTON TRANSISTORS

FEATURES *HighVCEO *Lowsaturationvoltage

Zetex

Zetex Semiconductors

Zetex

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBCV47isasiliconNPNDarlingtontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforapplicationsrequiringextremelyhighgain. MARKINGCODE:FG SERVICES •BondedInventory •CustomElectrical

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPN Silicon Darlington Transistors

NPNSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV26,BCV46(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

BCV产品属性

  • 类型

    描述

  • 型号

    BCV

  • 制造商

    Schneider Electric

  • 功能描述

    BRKR CVR VERTL - SEALANT SUPPLIED SEPRT

更新时间:2024-5-15 20:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
infineon/nxp
2015+
SOT-23
3640
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
ON
24+
SOT-23 (TO-236)
25000
ON全系列可订货
NXP/恩智浦
2021/2022+
NA
6000
原厂原装现货订货价格优势终端BOM表可配单提供样品
FAIRCHLD
2016+
SOT-23
6523
房间原装进口现货假一赔十
FAIRCHILD
20+/21+
SOT23
5600
全新原装现货
FSC/ON
23+
原包装原封 □□
18457
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
NXP/恩智浦
21+
SOT23
12000
INFINEON/英飞凌
21+23+
PG-TDSON-8
45000
16年电子元件供应商
NXP/恩智浦
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!

BCV芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
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  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

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