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BCV晶体管资料
BCV26别名:BCV26三极管、BCV26晶体管、BCV26晶体三极管
BCV26生产厂家:德国西门子AG公司
BCV26制作材料:Si-P+Darl
BCV26性质:表面帖装型 (SMD)
BCV26封装形式:贴片封装
BCV26极限工作电压:40V
BCV26最大电流允许值:0.5A
BCV26最大工作频率:200MHZ
BCV26引脚数:3
BCV26最大耗散功率:0.36W
BCV26放大倍数:β>20000
BCV26图片代号:H-15
BCV26vtest:40
BCV26htest:200000000
- BCV26atest:.5
BCV26wtest:.36
BCV26代换 BCV26用什么型号代替:BCV46,
BCV价格
参考价格:¥0.1514
型号:BCV26 品牌:Fairchild 备注:这里有BCV多少钱,2024年最近7天走势,今日出价,今日竞价,BCV批发/采购报价,BCV行情走势销售排行榜,BCV报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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PNP Darlington transistors DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP SILICON PLANAR DARLINGTON TRANSISTORS FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPE-BCV26-BCV27 BCV46-BCV47 | Zetex Zetex Semiconductors | |||
PNP Silicon Darlington Transistors (For general AF applications High collector current) PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV27,BCV47(NPN) | SIEMENS Siemens Ltd | |||
PNP Darlington Transistor PNPDarlingtonTransistor Thisdeviceisdesignedforapplicationsrequiringextremelyhighcurrentgainatcurrentsto800mA.SourcedfromProcess61. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV27,BCV47(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
PNP Darlington transistors FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage.NPNcomplements:BCV27andBCV47. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPEBCV26-BCV27 BCV46-BCV47 PARTMARKINGDETAILSBCV26-ZFD BCV46-ZFE | DIODESDiodes Incorporated 达尔科技 | |||
PNP Darlington Transistors PNPDarlingtonTransistors forpreamplifierinputapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
PNP Darlington transistors DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN Darlington Transistors NPNDarlingtonTransistors forpreamplifierinputapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
NPN Darlington transistors DESCRIPTION NPNDarlingtontransistorinaSOT23plasticpackage. PNPcomplements:BCV26andBCV46. FEATURES •Mediumcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN SILICON PLANAR DARLINGTON TRANSISTORS FEATURES *HighVCEO *Lowsaturationvoltage | Zetex Zetex Semiconductors | |||
NPN Silicon Darlington Transistors (For general AF applications High collector current) NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV26,BCV46(PNP) | SIEMENS Siemens Ltd | |||
NPN Darlington Transistor NPNDarlingtonTransistor Thisdeviceisdesignedforapplicationsrequiringextremelyhighcurrentgainatcollectorcurrentsto1.0A.SourcedfromProcess05. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Surface mount Si-Epitaxial PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
TRANSISTOR (NPN) FEATURES ●HighCollectorCurrent ●HighCurrentGain | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
NPN Darlington Plastic Encapsulated Transistor FEATURES ●ForgeneralAFapplicationhighcollectorcurrent ●Highcurrentgain | SECOS SeCoS Halbleitertechnologie GmbH | |||
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV26,BCV46(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Darlington transistors DESCRIPTION NPNDarlingtontransistorinaSOT23plasticpackage. PNPcomplements:BCV26andBCV46. FEATURES •Mediumcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS FEATURES *HighVCEO *Lowsaturationvoltage | DIODESDiodes Incorporated 达尔科技 | |||
SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS FEATURES *HighVCEO *Lowsaturationvoltage | Zetex Zetex Semiconductors | |||
NPN Surface Mount Darlington Transistor Features •HighCollectorCurrent •HighCurrentGain •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •M | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●HighCurrentGain | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
NPN Darlington Transistors NPNDarlingtonTransistors forpreamplifierinputapplications | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
DARLINGTON TRANSISTOR (NPN) DARLINGTONTRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●HighCurrentGain | FS First Silicon Co., Ltd | |||
NPN Darlington Transistors NPNDarlingtonTransistors Features ●HighCollectorCurrent. ●HighCurrentGain. | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | |||
NPN Darlington Amplifier Transistor FEATURES ●ComplementarytoBCV26,BCV46. ●Highcollectorcurrent. ●Highcurrentgain. ●ForgeneralAFapplications. ●Complementarytypes:BCV26,BCV46 APPLICATIONS ●NPNsilicondarlingtontransistor. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURES HighCollectorCurrent HighCurrentGain | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
NPN Darlington transistor 1.Generaldescription NPNDarlingtontransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:BCV26 2.Featuresandbenefits •Mediumcurrentof500mA •Lowvoltageof30V •HighDCcurrentgainofminimum4000 •AEC-Q101qualified 3.App | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP Darlington transistors DESCRIPTION PNPDarlingtontransistorinaSOT89plasticpackage. NPNcomplements:BCV29andBCV49. FEATURES •VeryhighDCcurrentgain(min.10000) •Highcurrent(max.500mA) •Lowvoltage(max.60V). APPLICATIONS •Whereveryhighamplificationisrequired. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP SILICON DARLINGTON TRANSISTOR SOT89PNPSILICONDARLINGTONTRANSISTOR COMPLEMENTARYTYPE–BCV29 PARTMARKINGDETAIL–ED | Zetex Zetex Semiconductors | |||
PNP Silicon Darlington Transistors (For general AF applications High collector current) PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV29,BCV49(NPN) | SIEMENS Siemens Ltd | |||
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV29,BCV49(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNP Darlington transistors DESCRIPTION PNPDarlingtontransistorinaSOT89plasticpackage. NPNcomplements:BCV29andBCV49. FEATURES •VeryhighDCcurrentgain(min.10000) •Highcurrent(max.500mA) •Lowvoltage(max.60V). APPLICATIONS •Whereveryhighamplificationisrequired. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN Darlington transistors DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemountSOT89plasticpackage.PNPcomplements:BCV28andBCV48. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN SILICON PLANAR DARLINGTON TRANSISTOR SOT89NPNSILICONPLANARDARLINGTONTRANSISTOR COMPLEMENTARYTYPE–BCV28 PARTMARKINGDETAIL–EF | Zetex Zetex Semiconductors | |||
NPN Silicon Darlington Transistors (For general AF applications High collector current) NPNSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV28,BCV48(PNP) | SIEMENS Siemens Ltd | |||
NPN Darlington transistors DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemountSOT89plasticpackage.PNPcomplements:BCV28andBCV48. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
NPN Darlington transistors FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemountSOT89plasticpackage.PNPcomplements:BCV28andBCV48. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
NPN Darlington transistors FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemount SOT89plasticpackage.PNPcomplements:BCV28and BCV48. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV28,BCV48(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPN Darlington transistors FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. DESCRIPTION NPNsmall-signalDarlingtontransistorinasurfacemount SOT89plasticpackage.PNPcomplements:BCV28and BCV48. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNP Darlington transistors DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNP SILICON PLANAR DARLINGTON TRANSISTORS FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPE-BCV26-BCV27 BCV46-BCV47 | Zetex Zetex Semiconductors | |||
PNP Silicon Darlington Transistors (For general AF applications High collector current) PNPSiliconDarlingtonTransistors ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Complementarytypes:BCV27,BCV47(NPN) | SIEMENS Siemens Ltd | |||
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23(TO-236) •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
PNP Silicon Darlington Transistors PNPSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV27,BCV47(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PNP Darlington Transistors PNPDarlingtonTransistors forpreamplifierinputapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
PNP Darlington transistors DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage. NPNcomplements:BCV27andBCV47. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
PNP Darlington transistors FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.60V) •VeryhighDCcurrentgain(min.10000). APPLICATIONS •Whereveryhighamplificationisrequired. DESCRIPTION PNPDarlingtontransistorinaSOT23plasticpackage.NPNcomplements:BCV27andBCV47. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS FEATURES *Lowsaturationvoltage COMPLEMENTARYTYPEBCV26-BCV27 BCV46-BCV47 PARTMARKINGDETAILSBCV26-ZFD BCV46-ZFE | DIODESDiodes Incorporated 达尔科技 | |||
60V PNP DARLINGTON TRANSISTOR IN SOT23 Features •BVCEO>-60V •DarlingtonTransistorhFE>10k@100mAforhighgain •IC=-500mAHighContinuousCollectorCurrent •ComplementaryDarlingtonPNPType:BCV47 •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie | DIODESDiodes Incorporated 达尔科技 | |||
PNP Darlington transistor 1.Generaldescription PNPDarlingtontransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. NPNcomplement:BCV47-Q 2.Featuresandbenefits •Highcurrent •Highcurrentgain •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplicatio | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
60V PNP DARLINGTON TRANSISTOR IN SOT23 Features •BVCEO>-60V •DarlingtonTransistorhFE>10k@100mAforhighgain •IC=-500mAHighContinuousCollectorCurrent •ComplementaryDarlingtonPNPType:BCV47 •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie | DIODESDiodes Incorporated 达尔科技 | |||
60V PNP DARLINGTON TRANSISTOR IN SOT23 Features •BVCEO>-60V •DarlingtonTransistorhFE>10k@100mAforhighgain •IC=-500mAHighContinuousCollectorCurrent •ComplementaryDarlingtonPNPType:BCV47 •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie | DIODESDiodes Incorporated 达尔科技 | |||
NPN Darlington transistors DESCRIPTION NPNDarlingtontransistorinaSOT23plasticpackage. PNPcomplements:BCV26andBCV46. FEATURES •Mediumcurrent(max.500mA) •Lowvoltage(max.60V) •HighDCcurrentgain(min.20000). APPLICATIONS •Preamplifierinputapplications. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
NPN SILICON PLANAR DARLINGTON TRANSISTORS FEATURES *HighVCEO *Lowsaturationvoltage | Zetex Zetex Semiconductors | |||
NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBCV47isasiliconNPNDarlingtontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforapplicationsrequiringextremelyhighgain. MARKINGCODE:FG SERVICES •BondedInventory •CustomElectrical | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN Silicon Darlington Transistors NPNSiliconDarlingtonTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Complementarytypes:BCV26,BCV46(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |
BCV产品属性
- 类型
描述
- 型号
BCV
- 制造商
Schneider Electric
- 功能描述
BRKR CVR VERTL - SEALANT SUPPLIED SEPRT
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
infineon/nxp |
2015+ |
SOT-23 |
3640 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ON |
24+ |
SOT-23 (TO-236) |
25000 |
ON全系列可订货 |
|||
NXP/恩智浦 |
2021/2022+ |
NA |
6000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
FAIRCHLD |
2016+ |
SOT-23 |
6523 |
房间原装进口现货假一赔十 |
|||
FAIRCHILD |
20+/21+ |
SOT23 |
5600 |
全新原装现货 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
18457 |
原装进口特价供应 QQ 1304306553 更多详细咨询 库存 |
|||
NXP/恩智浦 |
21+ |
SOT23 |
12000 |
||||
INFINEON/英飞凌 |
21+23+ |
PG-TDSON-8 |
45000 |
16年电子元件供应商 |
|||
NXP/恩智浦 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
BCV规格书下载地址
BCV参数引脚图相关
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DdatasheetPDF页码索引
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