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BC849C价格
参考价格：￥0.0635
型号：BC849C,215 品牌：NXP 备注：这里有BC849C多少钱，2024年最近7天走势，今日出价，今日竞价，BC849C批发/采购报价，BC849C行情走势销售排行榜，BC849C报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BC849C | NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
BC849C | NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain) NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP) | SIEMENS Siemens Ltd |  | |
BC849C | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 |  | |
BC849C | GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V | WEITRONWEITRON 威堂電子科技 |  | |
BC849C | NPNGENERALPURPOSETRANSISTORS FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPANJIT International Inc. 强茂強茂股份有限公司 |  | |
BC849C | NPNGeneralPurposeTransistors ■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●PNPcomplements:BC859andBC860. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
BC849C | NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | |
BC849C | NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
BC849C | SurfacemountSi-EpitaxialPlanarTransistors GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 |  | |
BC849C | SMDNPNTransistor GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | |
BC849C | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 |  | |
BC849C | SmallSignalTransistors(NPN) FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ♦Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ | GE GE Industrial Company |  | |
BC849C | NPNgeneralpurposetransistors FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC859andBC860. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
BC849C | NPNPlastic-EncapsulateTransistors 文件：546.55 Kbytes Page：4 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
BC849C | NPNgeneralpurposetransistors 文件：139.97 Kbytes Page：8 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BC849C | NPNTransistors 文件：1.33877 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | |
BC849C | NPNTransistors 文件：358.01 Kbytes Page：3 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
BC849C | SMDGeneralPurposeNPNTransistors 文件：144.84 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
BC849C | NPNSiliconAFTransistors 文件：183.85 Kbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BC849C | NPNPlastic-EncapsulateTransistors 文件：226.31 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
SOT23NPNSILICONPLANAR SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS | Zetex Zetex Semiconductors |  | | |
CASE318-08,STYLE6SOT-23(TO-236AB) GeneralPurposeTransistors NPNSilicon | MotorolaMotorola, Inc 摩托罗拉 |  | | |
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 |  | | |
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPNEpitaxialSiliconTransistor Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
NPNSiliconAFTransistors NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
NPNSiliconAFTransistors NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
NPNGENERALPURPOSETRANSISTORS FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
NPNTransistor FEATURES -Lowreversecurrent,highreliability -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | | |
NPNgeneralpurposetransistors FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 30V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 30V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | | | |
GeneralPurposeTransistors 文件：116.72 Kbytes Page：13 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors 文件：113.71 Kbytes Page：13 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors 文件：116.72 Kbytes Page：13 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
GeneralPurposeTransistors 文件：113.71 Kbytes Page：13 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPNEpitaxialSiliconTransistor 文件：142.4 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPNTransistor 文件：236.02 Kbytes Page：6 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | | |
SMDGeneralPurposeNPNTransistors 文件：130.039 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | | |
SMDGeneralPurposeNPNTransistors 文件：126.13 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | | |
NPNSiliconEpitaxialPlanarTransistor 文件：446.64 Kbytes Page：5 Pages | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 |  | | |
NPNSiliconAFTransistors 文件：183.85 Kbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage) 文件：272.32 Kbytes Page：8 Pages | SIEMENS Siemens Ltd | | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | | |
R.F.POWERAMPLIFIER,OSCILLATOR,A.F.POWERAMPLIFIER,ORMODULATOR 文件：936.79 Kbytes Page：4 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | |
BC849C产品属性
- 类型
描述
- 型号
BC849C
- 制造商
NXP Semiconductors
- 功能描述
Trans GP BJT NPN 30V 0.1A 3-Pin TO-236AB
- 制造商
NXP Semiconductors
- 功能描述
Trans GP BJT NPN 30V 0.1A 3-Pin TO-236AB Bulk
- 制造商
NXP Semiconductors
- 功能描述
TRANSISTOR NPN SOT-23
- 制造商
NXP Semiconductors
- 功能描述
TRANSISTOR, NPN, SOT-23
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP/恩智浦 |
20+ |
SOT-23 |
5000 |
支持实单/原盒/原包/原标/进口原装 |
|||
23+ |
N/A |
45880 |
正品授权货源可靠 |
||||
Taiwan Semiconductor Corporati |
23+ |
SC-70,SOT-323 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Nexperia安世 |
19+ |
SOT-23 |
90000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PHILIPS |
23+ |
SOT23 |
12300 |
||||
ON |
2020+ |
SOT-23 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NXP/恩智浦 |
1937+ |
SOT23 |
9852 |
只做进口原装正品现货!或订货假一赔十! |
|||
INFINEON |
2016+ |
SOT-23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON/英飞凌 |
SOT323 |
7906200 |
|||||
安世(Nexperia) |
23+ |
SOT-23 |
21060 |
进口原装假一赔十可开增值票 |
BC849C芯片相关品牌
BC849C规格书下载地址
BC849C参数引脚图相关
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- c3000
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- c1209
- c1008
- c1000
- bul128a
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- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- BC856A
- BC856_1
- BC856
- BC850W
- BC850T
- BC850CW
- BC850CT
- BC850CLT1G
- BC850CE6327HTSA1
- BC850CE6327
- BC850C,235
- BC850C,215
- BC850C
- BC850BWH6327XTSA1
- BC850BW,115
- BC850BW
- BC850BT
- BC850BLT1G
- BC850BE6327HTSA1
- BC850BE6327
- BC850B,235
- BC850B,215
- BC850B
- BC850AW
- BC850AMTF
- BC850A
- BC850
- BC84DG
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- BC849T
- BC849S
- BC849CWH6327XTSA1
- BC849CW.115
- BC849CW,115
- BC849CW
- BC849C-TP
- BC849CT
- BC849CLT1G
- BC849CE6327
- BC849C,215
- BC849BW,115
- BC849BW
- BC849B-TP
- BC849BT
- BC849BLT1G
- BC849BF
- BC849BE6327
- BC849B,235
- BC849B,215
- BC849B
- BC849AW
- BC849A
- BC849
- BC848W,115
- BC848W
- BC848UF
- BC848U
- BC848-T
- BC848T
- BC848S
- BC848F
- BC848CWT1G
- BC848CWH6327
- BC848CW-7-F
- BC848CW
- BC848C-TP
- BC848CT
- BC848CS
- BC848CQ
- BC848CPDW1T1G
- BC848CMTF
- BC848CLT1G
- BC848CF
- BC848CE6433HTMA1
- BC848CE6433
- BC848CE6327HTSA1
- BC848CE6327
- BC848CDW1T1G
- BC848C
- BC848BW
BC849C数据表相关新闻
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