BC848B价格
参考价格:¥0.0394
型号:BC848B,215 品牌:NXP 备注:这里有BC848B多少钱,2024年最近7天走势,今日出价,今日竞价,BC848B批发/采购报价,BC848B行情走势销售排行榜,BC848B报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
BC848B | NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
BC848B | NPNGeneralPurposeTransistor Features 1)BVCEOminimumis30V(IC=1mA) 2)ComplementstheBC858B/BC858BW. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ||
BC848B | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •EpitaxialDieConstruction •IdeallySuitedforAutomaticInsertion •310mWPowerDissipation •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications | TRSYS Transys Electronics | ||
BC848B | GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZOWIE 智威智威科技股份有限公司 | ||
BC848B | NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain) NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP) | SIEMENS Siemens Ltd | ||
BC848B | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH | DIODESDiodes Incorporated 达尔科技 | ||
BC848B | NPNSmallSignalTransistor310mW Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:0.225W(Tamb=25°C)(Note1) •CollectorCurrent:0.1A •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC848B | NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BC848B | SurfacemountSi-EpitaxialPlanarTransistors GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | ||
BC848B | GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V | WEITRONWEITRON 威堂電子科技 | ||
BC848B | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | ETL E-Tech Electronics LTD | ||
BC848B | 0.2WattsNPNPlastic-EncapsulateTransistors Features ♦Epitaxialplanardieconstruction ♦Surfacedevicetypemounting ♦Moisturesensitivitylevel1 ♦MatteTin(Sn)leadfinishwithNickel(Ni)underplate ♦PbfreeversionandRoHScompliant ♦Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondat | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
BC848B | NPNGENERALPURPOSETRANSISTORS FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | ||
BC848B | SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications | TAITRON TAITRON | ||
BC848B | NPNgeneralpurposeTransistor FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
BC848B | NPNGeneralPurposeTransistor ■Features ●Ideallysuitedforautomaticinsertion ●ForswitchingandAFamplifierapplications | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BC848B | BC846A FEATURES •Collectcurrent:0.1A •GeneralPurposeTransistorNPNType •RoHScompliantproduct •OperatingTemp.:-55OC~+150OC | SECOS SeCoS Halbleitertechnologie GmbH | ||
BC848B | 30V,100mANPNgeneral-purposetransistors Generaldescription NPNgeneral-purposetransistorsinSurfaceMountedDevice(SMD)plasticpackages. Features ■General-purposetransistors ■SMDplasticpackages Applications ■General-purposeswitchingandamplification | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | ||
BC848B | NPNgeneralpurposeTransistor FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification. | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 | ||
BC848B | TRANSISTOR(NPN) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
BC848B | SmallSignalTransistors(NPN) FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ♦Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ | GE GE Industrial Company | ||
BC848B | SMDNPNTransistor GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | ||
BC848B | Plastic-EncapsulateTransistors FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage | OLITECH Olitech Electronics Co.Ltd | ||
BC848B | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | ||
BC848B | NPNSURFACEMOUNTSMALLSIGNALTRANSISTORINSOT23 Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable •ForswitchingandAFAmplifier •RoHScompliantpackage | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | ||
BC848B | EpoxymeetsUL-94V-0flammabilityrating NPNSiliconEpitaxialTransistor forswitchingandamplifierapplications | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
BC848B | NPNSILICONPLANAREPITAXIALTRANSISTORS ForuseinDriverStagesofAudioAmplifierinThickandThin-filmHybridCircuits | CDIL CDIL | ||
BC848B | Plastic-EncapsulateTransistors FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | ||
BC848B | TRANSISTOR(NPN) FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications | UMWUMW 友台友台半导体 | ||
BC848B | Ideallysuitedforautomaticinsertion FEATURE Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | ||
BC848B | NPNSmallSignalTransistor 文件:218.99 Kbytes Page:5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | ||
BC848B | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
BC848B | Ideallysuitedforautomaticinsertion 文件:450.11 Kbytes Page:6 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | ||
BC848B | SMDGeneralPurposeNPNTransistors 文件:144.84 Kbytes Page:2 Pages | DiotecDIOTEC 德欧泰克 | ||
BC848B | NPNgeneralpurposeTransistor 文件:2.06563 Mbytes Page:4 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
BC848B | NPNPlastic-EncapsulateTransistors 文件:1.35798 Mbytes Page:5 Pages | JINGHENG Jinan Jing Heng Electronics Co., Ltd. | ||
BC848B | SURFACEMOUNTNPNSILICONTRANSISTOR 文件:345.56 Kbytes Page:2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | ||
BC848B | SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) 文件:454.06 Kbytes Page:2 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | ||
BC848B | NPNSiliconAFTransistors 文件:183.85 Kbytes Page:19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
BC848B | NPNPlastic-EncapsulateTransistors 文件:226.31 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
BC848B | NPNTransistors 文件:1.66599 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | ||
BC848B | NPNTransistors 文件:704.82 Kbytes Page:4 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
BC848B | NPNgeneralpurposeTransistor 文件:220 Kbytes Page:6 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | ||
SOT23NPNSILICONPLANAR SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS | Zetex Zetex Semiconductors | |||
SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH | DIODESDiodes Incorporated 达尔科技 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | |||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. | ETL E-Tech Electronics LTD | |||
NPNSiliconAFTransistors NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC857...-BC860...(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
SmallSignalTransistor Features -PowerdissipationPCM:0.20W(@TA=25°C) -CollectorcurrentICM:0.1A -Collector-basevoltageVCBO:BC846=80VBC847=50VBC848=30V -Operatingandstoragejunctiontemperaturerange:TJ,TSTG=-65to+150°C | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
GENERALPURPOSETRANSISTORSNPNSILICON DESCRIPTION The BC846AL/BLA847848AL/CLare availableinSOT23package. FEATURES ⚫Highcurrentgain ⚫ExcellenthFElinearity ⚫Lownoisebetween30Hzand15kHz ⚫ForAFinputstagesanddriverapplications ⚫AvailableinSOT23package APPLICATIONS ⚫Ge | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | |||
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | |||
CASE318-08,STYLE6SOT-23(TO-236AB) GeneralPurposeTransistors NPNSilicon | MotorolaMotorola, Inc 摩托罗拉 | |||
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |
BC848B产品属性
- 类型
描述
- 型号
BC848B
- 功能描述
两极晶体管 - BJT Transistor 200mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP/恩智浦 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NEXPERIA |
ROHS环保 |
SOT23 |
15800 |
原装正品,支持实单 |
|||
ON/安森美 |
21+ |
SOT-23 |
600000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
Nexperia/安世 |
21+ |
SOT-23 |
352980 |
十年信誉,只做原装,有挂就有现货! |
|||
ON |
22+ |
7500 |
只做原装正品假一赔十!正规渠道订货! |
||||
DIODES达尔 |
23+ |
SOT23 |
918000 |
明嘉莱只做原装正品现货 |
|||
Nexperia安世 |
23+ |
SOT-23 |
137316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
23+ |
SOT-323(SC-70) |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
21+ |
SOT23 |
50000 |
只做原装,支持实单! |
|||
NEXPERIA |
22+ |
SOT-23 |
10000 |
只做原装现货 假一赔万 |
BC848B规格书下载地址
BC848B参数引脚图相关
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- BC849A
- BC849
- BC848W
- BC848UF
- BC848U
- BC848T
- BC848S
- BC848F
- BC848CW
- BC848CT
- BC848CS
- BC848CQ
- BC848CF
- BC848CDW1T1G
- BC848C-7-F
- BC848C
- BC848BWT1G
- BC848BWT106
- BC848BWH6327XTSA1
- BC848BWH6327
- BC848BW-7-F
- BC848BW
- BC848B-TP
- BC848BT116
- BC848BT
- BC848BS
- BC848BQ
- BC848BP
- BC848BMTF
- BC848BLT3G
- BC848BLT3
- BC848BLT1G
- BC848BF
- BC848BE6433
- BC848BE6327HTSA1
- BC848BE6327
- BC848B-7-F
- BC848B,235
- BC848B,215
- BC848AW
- BC848A-TP
- BC848AT
- BC848AS
- BC848AQ
- BC848ALT1G
- BC848AF
- BC848A-7-F-CUTTAPE
- BC848A-7-F
- BC848A
- BC848
- BC847W,115
- BC847W
- BC847UF
- BC847U
- BC847T,115
- BC847-T
- BC847T
- BC847SH6433
- BC847SH6327XTSA1
- BC847SH6327
- BC847S
- BC847RA
- BC847QAPNZ
- BC847PNH6727XTSA1
- BC847PNH6327XTSA1
- BC847PNH6327
- BC847PNE6327
- BC847PN-7-F-CUTTAPE
- BC847PN-7-F
- BC847PN
- BC847N3
- BC847M
- BC847F
- BC847E
- BC847DS,115
- BC847DS
- BC847DG
- BC847CW-TP
BC848B数据表相关新闻
BC856B,215
BC856B,215
2024-4-22BC856BLT1G双极晶体管 - 双极结型晶体管(BJT)
BC807-25LT1GMM3Z12VST1GBC856BLT1G1N4148TA
2023-5-30BC847G-SOT523R-B-TG_UTC代理商
BC847G-SOT523R-B-TG_UTC代理商
2023-2-8BC857BW NXP/恩智浦
www.hfxcom.com
2022-1-12BC847CWT1G原装正品ON安森美
焕盛达竭诚为您提供一站式配套服务。当天下单,当天发货;
2020-10-4BC847PN-7-F公司全新原装现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-3-28
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80