BC848B价格

参考价格:¥0.0394

型号:BC848B,215 品牌:NXP 备注:这里有BC848B多少钱,2024年最近7天走势,今日出价,今日竞价,BC848B批发/采购报价,BC848B行情走势销售排行榜,BC848B报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BC848B

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BC848B

NPNGeneralPurposeTransistor

Features 1)BVCEOminimumis30V(IC=1mA) 2)ComplementstheBC858B/BC858BW.

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM
BC848B

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •EpitaxialDieConstruction •IdeallySuitedforAutomaticInsertion •310mWPowerDissipation •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications

TRSYS

Transys Electronics

TRSYS
BC848B

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

ZOWIEZOWIE

智威智威科技股份有限公司

ZOWIE
BC848B

NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain)

NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP)

SIEMENS

Siemens Ltd

SIEMENS
BC848B

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH

DIODESDiodes Incorporated

达尔科技

DIODES
BC848B

NPNSmallSignalTransistor310mW

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:0.225W(Tamb=25°C)(Note1) •CollectorCurrent:0.1A •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BC848B

NPNSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC848B

SurfacemountSi-EpitaxialPlanarTransistors

GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec
BC848B

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V

WEITRONWEITRON

威堂電子科技

WEITRON
BC848B

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

ETL

E-Tech Electronics LTD

ETL
BC848B

0.2WattsNPNPlastic-EncapsulateTransistors

Features ♦Epitaxialplanardieconstruction ♦Surfacedevicetypemounting ♦Moisturesensitivitylevel1 ♦MatteTin(Sn)leadfinishwithNickel(Ni)underplate ♦PbfreeversionandRoHScompliant ♦Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondat

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BC848B

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BC848B

SMDGeneralPurposeTransistor(NPN)

Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications

TAITRON

TAITRON

TAITRON
BC848B

NPNgeneralpurposeTransistor

FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BC848B

NPNGeneralPurposeTransistor

■Features ●Ideallysuitedforautomaticinsertion ●ForswitchingandAFamplifierapplications

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC848B

BC846A

FEATURES •Collectcurrent:0.1A •GeneralPurposeTransistorNPNType •RoHScompliantproduct •OperatingTemp.:-55OC~+150OC

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BC848B

30V,100mANPNgeneral-purposetransistors

Generaldescription NPNgeneral-purposetransistorsinSurfaceMountedDevice(SMD)plasticpackages. Features ■General-purposetransistors ■SMDplasticpackages Applications ■General-purposeswitchingandamplification

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BC848B

NPNgeneralpurposeTransistor

FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification.

PFSShenzhen Ping Sheng Electronics Co., Ltd.

平盛电子深圳市平盛电子有限公司

PFS
BC848B

TRANSISTOR(NPN)

FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
BC848B

SmallSignalTransistors(NPN)

FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ♦Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ

GE

GE Industrial Company

GE
BC848B

SMDNPNTransistor

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor

FORMOSAFormosa MS

美丽微半导体美丽微半导体股份有限公司

FORMOSA
BC848B

Plastic-EncapsulateTransistors

FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage

OLITECH

Olitech Electronics Co.Ltd

OLITECH
BC848B

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN
BC848B

NPNSURFACEMOUNTSMALLSIGNALTRANSISTORINSOT23

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable •ForswitchingandAFAmplifier •RoHScompliantpackage

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BWTECH
BC848B

EpoxymeetsUL-94V-0flammabilityrating

NPNSiliconEpitaxialTransistor forswitchingandamplifierapplications

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
BC848B

NPNSILICONPLANAREPITAXIALTRANSISTORS

ForuseinDriverStagesofAudioAmplifierinThickandThin-filmHybridCircuits

CDIL

CDIL

CDIL
BC848B

Plastic-EncapsulateTransistors

FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
BC848B

TRANSISTOR(NPN)

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications

UMWUMW

友台友台半导体

UMW
BC848B

Ideallysuitedforautomaticinsertion

FEATURE Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
BC848B

NPNSmallSignalTransistor

文件:218.99 Kbytes Page:5 Pages

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC
BC848B

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
BC848B

Ideallysuitedforautomaticinsertion

文件:450.11 Kbytes Page:6 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON
BC848B

SMDGeneralPurposeNPNTransistors

文件:144.84 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BC848B

NPNgeneralpurposeTransistor

文件:2.06563 Mbytes Page:4 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BC848B

NPNPlastic-EncapsulateTransistors

文件:1.35798 Mbytes Page:5 Pages

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG
BC848B

SURFACEMOUNTNPNSILICONTRANSISTOR

文件:345.56 Kbytes Page:2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
BC848B

SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN)

文件:454.06 Kbytes Page:2 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON
BC848B

NPNSiliconAFTransistors

文件:183.85 Kbytes Page:19 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BC848B

NPNPlastic-EncapsulateTransistors

文件:226.31 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BC848B

NPNTransistors

文件:1.66599 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BC848B

NPNTransistors

文件:704.82 Kbytes Page:4 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
BC848B

NPNgeneralpurposeTransistor

文件:220 Kbytes Page:6 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SOT23NPNSILICONPLANAR

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

Zetex

Zetex Semiconductors

Zetex

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

SOT23NPNSILICONPLANARGENERALPURPOSETRANSISTORS

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH

DIODESDiodes Incorporated

达尔科技

DIODES

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN

DualGeneralPurposeTransistors

DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications.

ETL

E-Tech Electronics LTD

ETL

NPNSiliconAFTransistors

NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC857...-BC860...(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

SmallSignalTransistor

Features -PowerdissipationPCM:0.20W(@TA=25°C) -CollectorcurrentICM:0.1A -Collector-basevoltageVCBO:BC846=80VBC847=50VBC848=30V -Operatingandstoragejunctiontemperaturerange:TJ,TSTG=-65to+150°C

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

GENERALPURPOSETRANSISTORSNPNSILICON

DESCRIPTION The BC846AL/BLA847848AL/CLare availableinSOT23package. FEATURES ⚫Highcurrentgain ⚫ExcellenthFElinearity ⚫Lownoisebetween30Hzand15kHz ⚫ForAFinputstagesanddriverapplications ⚫AvailableinSOT23package APPLICATIONS ⚫Ge

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

CASE318-08,STYLE6SOT-23(TO-236AB)

GeneralPurposeTransistors NPNSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors(NPNSilicon)

GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating−HumanBodyModel:>4000V ESDRating−MachineModel:>400V •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

BC848B产品属性

  • 类型

    描述

  • 型号

    BC848B

  • 功能描述

    两极晶体管 - BJT Transistor 200mW

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-28 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NXP/恩智浦
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
NEXPERIA
ROHS环保
SOT23
15800
原装正品,支持实单
ON/安森美
21+
SOT-23
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
Nexperia/安世
21+
SOT-23
352980
十年信誉,只做原装,有挂就有现货!
ON
22+
7500
只做原装正品假一赔十!正规渠道订货!
DIODES达尔
23+
SOT23
918000
明嘉莱只做原装正品现货
Nexperia安世
23+
SOT-23
137316
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi(安森美)
23+
SOT-323(SC-70)
3022
原厂订货渠道,支持BOM配单一站式服务
ON/安森美
21+
SOT23
50000
只做原装,支持实单!
NEXPERIA
22+
SOT-23
10000
只做原装现货 假一赔万

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BC848B数据表相关新闻