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BAS70-06价格
参考价格：￥0.1690
型号：BAS70-06 品牌：Taiwan Semi 备注：这里有BAS70-06多少钱，2024年最近7天走势，今日出价，今日竞价，BAS70-06批发/采购报价，BAS70-06行情走势销售排行榜，BAS70-06报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BAS70-06 | Schottkybarrierdoublediodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
BAS70-06 | SMALLSIGNALSCHOTTKYDIODES DESCRIPTION Lowturn-onandhighbreakdownvoltagediodesintendedforultrafastswitchingandUHFdetectorsinhybridmicrocircuits. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
BAS70-06 | SurfaceMountSchottkyBarrierDiodes Features •LowTurn–onVoltage •FastSwitching •PNJunctionGuardRingforTransientandESDProtection Applications •Fastswitchesinthickandthinfilmcircuits | VishayVishay Siliconix 威世科技 |  | |
BAS70-06 | SiliconSchottkyDiodes(General-purposediodesforhigh-speedswitchingCircuitprotectionVoltageclampingHigh-leveldetectingandmixing) Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •eesaqualified •ESA/SCCDetailSpec.No.:5512/020 | SIEMENS Siemens Ltd |  | |
BAS70-06 | SURFACEMOUNTSCHOTTKYBARRIERDIODE Description 70mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection. FeaturesandBenefits •LowTurn-OnVoltage •FastSwitching •PNJunctionGuardRingf | DIODESDiodes Incorporated 达尔科技 |  | |
BAS70-06 | SchottkyDiodes FEATURES ♦Thesediodesfeatureverylowturn-onvoltageandfastswitching. ♦ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. | GE GE Industrial Company |  | |
BAS70-06 | SurfacemountSchottky-BarrierSingle-/Double-Diodes •Powerdissipation310mW •Repetitivepeakreversevoltage70V •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 |  | |
BAS70-06 | SiliconSchottkyDiode SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
BAS70-06 | Surfacemountschottkybarrierdiode FEATURES •Lowturn-onvoltage.Pb •Fastswitching.Lead-free •PNJunctionguardringfortransientandESDprotection. •Ultra-smallsurfacemountpackage. •Alsoavailableinleadfreeversion. APPLICATIONS •Highspeedswitchingapplications. •Circuitprotecting. •Voltageclamping. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
BAS70-06 | SCHOTTKYDIODE FEATURES Powerdissipation PD:200mW(Tamb=25℃) Collectorcurrent IF:200mA Collector-basevoltage VR:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited |  | |
BAS70-06 | 200mWattsSurfaceMountSchottkyBarrierDiode FEATURES -Lowturn-onvoltage -Fastswitching -PNjunctionguardringfortransientandESDprotection | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | |
BAS70-06 | Schottkybarrier(double)diodes ■Features ●FastSwitchingSpeed ●Highbreakdownvoltage | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
BAS70-06 | General-purposeSchottkydiodes Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | |
BAS70-06 | SurfaceMountSchottkyBarrierDiodes SMALLSIGNALSCHOTTKYDIODES70mAMPERES70VOLTS Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentfor | WEITRONWEITRON 威堂電子科技 |  | |
BAS70-06 | SURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowTurn-onVoltage •FastSwitching •PNJunctionGuardringforTransientandESDProtection. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 |  | |
BAS70-06 | SurfaceMountSchottkyBarrierDiodes FEATURES •LowTurn-onVoltage •LowForwardVoltage-0.75V(Max)@IF=10mA •VeryLowCapacitance-LessThan2.0pF@0V •Forhighspeedswitchingapplication,circuitprotection | SECOS SeCoS Halbleitertechnologie GmbH |  | |
BAS70-06 | SurfaceMountSchottkyBarrierDiode200mWatt DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
BAS70-06 | SMALLSIGNALSCHOTTKYDIODE,SINGLE&DUAL PRV:70Volts Io:200mA FEATURES: *Thesediodesfeatureverylowturn-onvoltage *Fastswitching *ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges *Pb/RoHSFree | EIC EIC |  | |
BAS70-06 | SmallSignalSchottkyDiodes FEATURES •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercialgrade •BaseP/N-HE3-Ro | VishayVishay Siliconix 威世科技 | | |
BAS70-06 | SWITCHINGDIODE SWITCHINGDIODE FEATURES ●Lowturn-onvoltage ●Fastswitching ●Alsoavailableinleadfreeversion | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
BAS70-06 | SchottkyDiodes Features •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •RoHScompliantpackage | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 |  | |
BAS70-06 | SWITCHINGDIODE FEATURES •LowTurn-onvoltage •Fastswitching •Alsoavailableinleadfreeversion | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | |
BAS70-06 | 200mWSurfaceMountSchottkyBarrierDiode Features •Lowturn-onvoltage •Fastswitching •PNjunctionguardRingfortransient | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
BAS70-06 | SURFACEMOUNTSCHOTTKYBARRIERDIODES SMALLSIGNALSCHOTTKYDIODES0mAMPERES2070VOLTS DESCRIPTION Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhand | PACELEADERPACELEADER 霈峯霈峯實業有限公司 |  | |
BAS70-06 | Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. ●Ultra-smallsurfacemountpackage. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping. | DSK Diode Semiconductor Korea |  | |
BAS70-06 | Schottkyrectifier FEATURES: ●LowForwardVoltage ●FastSwitching ●Alsoavailableinleadfreeversion | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | |
BAS70-06 | SWITCHINGDIODE FEATURES ●LowTurn-onvoltage ●Fastswitching ●Alsoavailableinleadfreeversion | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |  | |
BAS70-06 | SurfaceMountSchottkyBarrierDiode 文件：241.89 Kbytes Page：3 Pages | BYTESONICBytesonic Electronics Co., Ltd. 百特森深圳市百特森电子有限公司 |  | |
BAS70-06 | SMDSmallSignalSchottkyDiodes 文件：184.13 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
BAS70-06 | Surfacemountschottkybarrierdiode 文件：533.18 Kbytes Page：3 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | |
BAS70-06 | SWITCHINGDIODE 文件：492.99 Kbytes Page：5 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 |  | |
BAS70-06 | 225mWSMDSwitchingDiode 文件：187.54 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
BAS70-06 | SMDSmallSignalSchottkyDiodes 文件：195.79 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
BAS70-06 | SOT23SILICONPLANARDUALSCHOTTKYBARRIERDIODES 文件：47.5 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | |
BAS70-06 | SchottkyDiodes 文件：743.57 Kbytes Page：2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | |
BAS70-06 | General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. 文件：224.44 Kbytes Page：20 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BAS70-06 | 70mASurfaceMountSmallSignalDiodes 文件：98.18 Kbytes Page：3 Pages |  | | |
BAS70-06 | SURFACEMOUNTSCHOTTKYDIODES 文件：135.81 Kbytes Page：3 Pages | CDIL CDIL |  | |
BAS70-06 | Surfacemountschottkybarrierdiode 文件：478.85 Kbytes Page：3 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | |
BAS70-06 | SiliconSchottkyDiode 文件：1.43572 Mbytes Page：24 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BAS70-06 | SurfaceMountSchottkyBarrierDiode200mWattTape&ReelEIAStandard481. 文件：294.39 Kbytes Page：4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | | |
BAS70-06 | SCHOTTKYDIODE 文件：124.37 Kbytes Page：2 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | |
BAS70-06 | SurfaceMountSchottkyBarrierDiodes 文件：2.10207 Mbytes Page：2 Pages | WEITRONWEITRON 威堂電子科技 | | |
BAS70-06 | 200mWattsSurfaceMountSchottkyBarrierDiode 文件：114.48 Kbytes Page：2 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
BAS70-06 | SiliconSchottkyDiode 文件：271.56 Kbytes Page：23 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BAS70-06 | SCHOTTKYarraySERIES 文件：131.31 Kbytes Page：2 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
BAS70-06 | General-purposeSchottkydiodes 文件：137.22 Kbytes Page：20 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | |
BAS70-06 | SURFACEMOUNTSCHOTTKYBARRIERDIODE 文件：278.84 Kbytes Page：3 Pages | DIODESDiodes Incorporated 达尔科技 | | |
SWITCHINGDIODE FEATURES Lowturn-onvoltage Fastswitching Alsoavailableinleadfreeversion -CARforautomotiveandotherapplicationsrequiringuniquesite andcontrolchangerequirements;AEC-Q101qualifiedandPPAP capable. | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 |  | | |
Lowcapacitance,lowseriesinductanceandresistanceSchottkydiodes Description TheBAS70seriesuses70VSchottkybarrierdiodespackagedinSOD-123,SOD-323,SOD-523,SOT-23,SOT-323,SOT-323-6LorSOT-666.ThesediodesarespeciallysuitedforsignaldetectionandtemperaturecompensationinRFapplications. Features ■Verylowconductionlosses ■Neg | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
SmallSignalSchottkyDiodes FEATURES •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualifiedavailable(partnumberonrequest) •BaseP/N-G3-green,commercialgrade • | VishayVishay Siliconix 威世科技 | | | |
SmallSignalSchottkyDiodes,SingleandDual FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade | VishayVishay Siliconix 威世科技 | | | |
SchottkyDiodes Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingLiLiPutpackage | VishayVishay Siliconix 威世科技 | | | |
SchottkyDiodes Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingLiLiPutpackage | VishayVishay Siliconix 威世科技 | | | |
General-purposedualSchottkydiode 1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andreco | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
SiliconSchottkyDiodeArray(General-purposediodeforhigh-speedswitchingCircuitprotectionVoltageclamping) SiliconSchottkyDiodeArray •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •AvailablewithCECCqualityassessment | SIEMENS Siemens Ltd | | | |
SCHOTTKYDIODE FEATURES •LowTurn-onvoltage •Fastswitching | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | | | |
SCHOTTKYBARRIERDIODE SCHOTTKYBARRIERDIODE FEATURES •LowTurn-onVoltage •FastSwitching | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | | |
SchottkyDiode Features •LowTurn-onvoltage •Fastswitching •Ultra-smallsurfacemountpackage •Alsoavailableinleadfreeversion | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
SchottkyBarrierRectifiers FEATURES •LowTurn-onvoltage •Fastswitching | SECOS SeCoS Halbleitertechnologie GmbH | | |
BAS70-06产品属性
- 类型
描述
- 型号
BAS70-06
- 功能描述
肖特基二极管与整流器 70 Volt 70mA Dual
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
23+ |
SOT-23 |
200000 |
有挂就有货,只做原装免费送样-可BOM配单 |
|||
NXP |
21+ |
SOT-23 |
15000 |
全新进口原装现货QQ：505546343手机17621633780曹小姐 |
|||
NEXPERIA/安世 |
23+ |
SMD |
3000 |
只做原装 深圳公司现货 十年信誉 |
|||
YANGJIE(扬杰) |
22+ |
SOT-23(TO-236) |
3000 |
原装现货、公平又符合市场标准 |
|||
NXP(恩智浦) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES |
2022+ |
SOT-23 |
9000 |
原厂授权代理 价格绝对优势 |
|||
VISHAY(威世) |
23+ |
SOT-23 |
15638 |
百分百原装正品,可原型号开票 |
|||
INFINEO |
21+ |
00+ |
12588 |
原装正品,自己库存 假一罚十 |
|||
Diodes Incorporated |
23+ |
TO-236-3,SC-59,SOT-23-3 |
30000 |
二极管-分立半导体产品-原装正品 |
|||
NXP |
2020+ |
SOT-23 |
7968 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
BAS70-06芯片相关品牌
BAS70-06规格书下载地址
BAS70-06参数引脚图相关
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- BAS45A
BAS70-06数据表相关新闻
BAS40-05WH6327
进口代理
2023-8-24BAT 165 E6327
进口代理
2023-3-30BAT165E6327HTSA1 全新原装正品 现货
BAT165E6327HTSA1全新原装正品现货
2022-7-7BAS40E6327
BAS40E6327 製造商:Infineon 產品類型:肖特基二極體及整流器 RoHS:詳細資料 產品:SchottkyDiodes 安裝風格:SMD/SMT 封裝/外殼:SOT-23-3 配置:Single 技術:Si If-順向電流:120mA Vf-順向電壓:1V Ifsm-順向浪湧電流:200mA Ir-反向電流:1uA 最低工作溫度:-55C 最高工
2021-6-24BAS40-07E6327
BAS40-07E6327
2021-3-23BAT-02LRH
BAT-02LRH，全新原装当天发货或门市自取0755-82732291，
2019-3-22
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