BAS40-价格

参考价格:¥0.2740

型号:BAS40-00-E3-08 品牌:Vishay 备注:这里有BAS40-多少钱,2024年最近7天走势,今日出价,今日竞价,BAS40-批发/采购报价,BAS40-行情走势销售排行榜,BAS40-报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BAS40-

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

SIEMENS

Siemens Ltd

SIEMENS

Small Signal Schottky Diodes, Single and Dual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •BaseP/N-E3-RoHS-compliant,commercialgrade •BaseP/N-HE3-

VishayVishay Siliconix

威世科技

Vishay

Small Signal Schottky Diodes, Single and Dual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade

VishayVishay Siliconix

威世科技

Vishay

Small Signal Schottky Diodes, Single and Dual

FEATURES •Thesediodesfeatureverylowturn-onvoltage andfastswitching •ThesedevicesareprotectedbyaPNjunction guardringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable (partnumberonrequest) •BaseP/N-G3-green,commercialgrade

VishayVishay Siliconix

威世科技

Vishay

Small Signal Schottky Diodes, Single & Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技

Vishay

Small Signal Schottky Diodes, Single & Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技

Vishay

Small Signal Schottky Diodes, Single & Dual

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •AEC-Q101qualified •ComplianttoRoHSdirective2002/95/ECandinaccordancetoWEEE2002/96/EC

VishayVishay Siliconix

威世科技

Vishay

Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

General-purpose diode for high-speed switching

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Schottky Diode in SOD-523

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingSOD-523package •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/

VishayVishay Siliconix

威世科技

Vishay

Small Signal Schottky Diode

FEATURES •Thisdiodefeaturesverylowturn-onvoltageand fastswitching •ThisdeviceisprotectedbyaPNjunctionguard ringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •SpacesavingSOD-523package •BaseP/N-G3-RoHS-compliant,commer

VishayVishay Siliconix

威世科技

Vishay

Small Signal Schottky Diode

FEATURES •Thisdiodefeaturesverylowturn-onvoltageand fastswitching •ThisdeviceisprotectedbyaPNjunctionguard ringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable •SpacesavingSOD-523package •BaseP/N-G3-RoHS-compliant,commer

VishayVishay Siliconix

威世科技

Vishay

Schottky Diode in SOD-523

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingSOD-523package •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/

VishayVishay Siliconix

威世科技

Vishay

Schottky Diode in SOD-523

Features •Thesediodesfeatureverylowturn-onvoltageandfastswitching. •ThesedevicesareprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges. •SpacesavingSOD-523package •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/

VishayVishay Siliconix

威世科技

Vishay

Small Signal Schottky Diode

FEATURES •Thisdiodefeaturesverylowturn-onvoltageandfastswitching •ThisdeviceisprotectedbyaPNjunctionguardringagainstexcessivevoltage,suchaselectrostaticdischarges •SpacesavingSOD-523package •Materialcategorization:fordefinitionsofcompliancepleaseseewww.v

VishayVishay Siliconix

威世科技

Vishay

Surface Mount Schottky Barrier Diodes

Description: Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimite

WEITRONWEITRON

威堂電子科技

WEITRON

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

达尔科技

DIODES

Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending

SIEMENS

Siemens Ltd

SIEMENS

SCHOTTKY DIODE

FEATURES ●LowForwardVoltage ●FastSwitching

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

Surface Mount Schottky Barrier Diode 200 mWatt

DESCRIPTION VariousconfigurationsofSchottkybarrier’sdiodesinSOT-23packageareprovidedforgeneral-purposeuseinhigh-speedswitching,mixersanddetectorapplications.Theymayalsobeusedforsignalintegrityandcounteractthetransmission-lineeffectswith(PC)boardtrancesbycla

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Surface mount schottky barrier diode

FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

DSK

Diode Semiconductor Korea

DSK

General-purpose diode for high-speed switching

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SURFACE MOUNT SCHOTTKY BARRIER DIODES

SMALLSIGNALSCHOTTKYDIODES0mAMPERES2040VOLTS DESCRIPTION Theseschottkybarrierdiodesaredesignedforhighspeedswitchingapplicationscircuitprotection,andvoltageclamping,Extremelylowforwardvoltagereducesconductionloss,Miniaturesurfacemountpackageisexcellentforhand

PACELEADERPACELEADER

霈峯霈峯實業有限公司

PACELEADER

SCHOTTKY BARRIER DIODES

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Schottky barrier double diodes

DESCRIPTION PlanarSchottkybarrierdiodeswithanintegratedguardringforstressprotection.Singlediodesanddoublediodeswithdifferentpinningareavailable.ThediodesBAS40,BAS40-04,BAS40-05andBAS40-06areencapsulatedinaSOT23smallplasticSMDpackage.TheBAS40-07isencapsulat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

Surface Mount Schottky Barrier Diodes

Features ●LowTurn–onVoltage ●FastSwitching ●PNJunctionGuardRingforTransientandESD   Protection Applications   Fastswitchesinthickandthinfilmcircuits

VishayVishay Siliconix

威世科技

Vishay

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

DIODESDiodes Incorporated

达尔科技

DIODES

Schottky Diodes

FEATURES ♦Thesediodesfeatureverylowturn-on voltageandfastswitching. ♦ThesedevicesareprotectedbyaPN junctionguardringagainstexcessive voltage,suchaselectrostaticdischarges.

GE

GE Industrial Company

GE

Surface mount Schottky-Barrier Single-/ Double-Diodes

Features Veryhighswitchingspeed Lowjunctioncapacitance Lowleakagecurrent ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Signalprocessing,High-speed switching,Polarityprotection Commercialgrade1) MechanicalData1) Tapedandre

DiotecDIOTEC

德欧泰克

Diotec

Silicon Schottky Diode

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Surface Mount Schottky Diode

Voltage:40VoltsPower:200mW Features LowTurn-onVoltage LowForwardVoltage-0.5V(Max)@IF=30mA VeryLowCapacitance-LessThan5.0pF@1V Forhighspeedswitchingapplication,circuitprotection

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

SCHOTTKY DIODE

FEATURES Powerdissipation PD:200mW(Tamb=25℃) ForwardCurrent IF:200mA ReverseVoltage VR:40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

Surface mount schottky barrier diode

Surfacemountschottkybarrierdiode FEATURES ●Lowturn-onvoltage. ●Fastswitching. ●PNJunctionguardringfortransientand ESDprotection. APPLICATIONS ●Highspeedswitchingapplications. ●Circuitprotecting. ●Voltageclamping.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

General-purpose Schottky diodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE-40VoltsCURRENT-0.2Ampere FEATURES *Forgeneralpurposeapplications *Lowforwardvoltagedrop. *Fastswitchingtime. *ProtectedbyaPNjunctionguardringagainstexcessive voltage,suchaselectrostaticdischarge(ESD).

DCCOMDc Components

直流元件直流元件有限公司

DCCOM

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •Lowforwardvoltage •Fastswitching

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

200mW, Low VF, SMD Schottky Barrier Diode

FEATURES -Metal-on-siliconschottkybarrier -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PackingcodewithsuffixGmeans greencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

Schottky Diodes

■Features ●LowForwardVoltage ●FastSwitching

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

Surface Mount Schottky Barrier Diode

Features ◇Lowturn-onvoltage ◇Fastswitching ◇PNjunctionguardRingfortransient

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

Plastic-Encapsulate Diodes

Plastic-EncapsulateDiodes FEATURES •LowForwardVoltage •FastSwitching

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

Low Forward Voltage Drop, Fast Switching

FEATURES ●LowForwardVoltageDrop. ●FastSwitching. ●PNJunctionGuardRingforTransientand ESDProtection.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

SCHOTTKY BARRIER DIODE

SOT-23Plastic-EncapsulateDiodes FEATURES ●LowForwardVoltage ●FastSwitching

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

200mA Surface Mount Small Signal Diodes

■Features •Lowcurrentrectificationandhighspeedswitching. •Smallsurfacemounttype. •Upto200mAcurrentcapability. •Lowforwardvoltagedrop(VF=1.00Vtyp.@40mA). •Siliconepitaxialplanarchip,metalsiliconjunction. •SuffixGindicatesHalogen-freepart,ex.BAS40G. •Le

General-purpose Schottky diodes

Generaldescription General-purposeSchottkydiodesinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed ■Lowleakagecurrent ■Highbreakdownvoltage ■Lowcapacitance Applications ■Ultrahigh-speedswitching ■Voltageclamping

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Description 200mAsurfacemountSchottkyBarrierDiodeinSOT23package,offerslowforwardvoltagedropandfastswitchingcapability,designedwithPNJunctionGuardRingforTransientandESDProtection,totallylead-freefinishandRoHScompliant,”Green”device. FeaturesandBenefits •Low

DIODESDiodes Incorporated

达尔科技

DIODES

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

达尔科技

DIODES

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features •LowForwardVoltageDrop •FastSwitching •PNJunctionGuardRingforTransientandESDProtection

DIODESDiodes Incorporated

达尔科技

DIODES

General-purpose diode for high-speed switching

SiliconSchottkyDiode •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Schottky Barrier Diode

Features Highreliability Smallmoldtype LowVF Application Smallcurrentrectification Structure Epitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

Schottky Barrier Diode

Features Highreliability Smallmoldtype LowVF Application Smallcurrentrectification Structure Epitaxialplanar

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

SCHOTTKY BARRIER DIODES

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Dual Series Schottky Barrier Diode

TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplicationswherespaceislimited. •Ex

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

SCHOTTKY BARRIER DIODES

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Dual Series Schottky Barrier Diode

DualSeriesSchottkyBarrierDiode TheseSchottkybarrierdiodesaredesignedforhighspeedswitchingapplications,circuitprotection,andvoltageclamping.Extremelylowforwardvoltagereducesconductionloss.Miniaturesurfacemountpackageisexcellentforhandheldandportableapplication

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

General-purpose dual Schottky diode

1.Generaldescription General-purposedualSchottkydiodeinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed •Lowleakagecurrent •Highbreakdownvoltage •Lowcapacitance •QualifiedaccordingtoAEC-Q101andreco

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ●LowForwardVoltageDrop ●FastSwitching ●Ultra-SmallSurfaceMountPackage ●PNJunctionGuardRingforTransientandESDProtection ●LeadFree/RoHSCompliant(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

Surface Mount Schottky Diodes

Features: *Lowforwardvoltage *Fastswitching *Ultra-SmallSurfaceMountPackage

WEITRONWEITRON

威堂電子科技

WEITRON

150mW 40Volt Plastic-Encapsulate Diode

Features •PowDissipationPD=150mWTamb=25°C •ForwardCurrentIF=200mA •ReverseVoltageVR=40V •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

Surface Mount Schottky Barrier Diodes

Features ◇Lowforwardvoltagedrop. ◇Fastswitching. ◇Ultra-smallsurfacemountpackage. ◇PNjunctionguardringfortransientand ◇ESDprotection. Applications ◇Generalpurposeswitchingapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

SCHOTTKY BARRIER DIODE

SCHOTTKYBARRIERDIODE FEATURES ●Lowforwardvoltage ●Fastswitching

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

BAS40-产品属性

  • 类型

    描述

  • 型号

    BAS40-

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    Silicon Schottky Diodes(General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

更新时间:2024-4-27 10:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
22+
SOT
8759
只做原装正品假一赔十!正规渠道订货!
NXP
23+
SOT-23
12000
进口原装现货
PHILIPS
07+pb-Free
SOT23
250000
NEXPERIA/安世
23+
SOT-23
90000
只做原厂渠道价格优势可提供技术支持
NEXPERIA/安世
21+
NA
13880
公司只售原装,支持实单
YANGJIE(扬杰)
22+
SOT-23(TO-236)
3000
原装现货、公平又符合市场标准
ON
22+
SOT-23
9000
原装正品可支持验货,欢迎咨询
DIODES
2308+
520009
一级代理,原装正品,公司现货!
ON
22+23+
N/A
3000
找假货请绕道
Vishay General Semiconductor -
23+
TO-236-3,SC-59,SOT-23-3
30000
二极管-分立半导体产品-原装正品

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