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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconPINDiodes ●PINdiodeforhighspeedswitchingofRFsignals ●Verylowforwardresistance(lowinsertionloss) ●Verylowcapacitance(highisolation) ●Forfrequenciesupto3GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
SiliconPINdiode DESCRIPTION PlanarPINdiodeinaSOD523ultrasmallSMDplasticpackage. FEATURES •HighspeedswitchingforRFsignals •Lowdiodecapacitance •Lowdiodeforwardresistance •Verylowseriesinductance •Forapplicationsupto3GHz. APPLICATIONS •RFattenuatorsandswitches. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
SiliconPINdiode Features ●HighspeedswitchingforRFsignals ●Lowdiodecapacitance ●Lowdiodeforwardresistance ●Verylowseriesinductance. ●Forapplicationsupto3GHz. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
SiliconPINdiode DESCRIPTION PlanarPINdiodeinaSOD523ultrasmallSMDplasticpackage. FEATURES •HighspeedswitchingforRFsignals •Lowdiodecapacitance •Lowdiodeforwardresistance •Verylowseriesinductance •Forapplicationsupto3GHz. APPLICATIONS •RFattenuatorsandswitches. | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Siemens |
23+ |
TSLP-2 |
32500 |
原厂原装正品 |
|||
INFINEON |
23+ |
TSLP-2 |
7936 |
||||
23+ |
N/A |
49000 |
正品授权货源可靠 |
||||
INFINEON |
2022+ |
BGA |
57550 |
||||
Siemens |
21+ |
48000 |
12588 |
原装正品假一罚十 |
|||
INFINEO |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON/英飞凌 |
TSLP-2-1 |
265209 |
假一罚十原包原标签常备现货! |
||||
INFINEON/英飞凌 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon |
22+ |
N/A |
7570 |
订货库存 只做原装 |
|||
INFINEON/英飞凌 |
23+ |
12000 |
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BAR63-02W/G规格书下载地址
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2013-1-31
DdatasheetPDF页码索引
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