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AT28晶体管资料
AT2894别名：AT2894三极管、AT2894晶体管、AT2894晶体三极管
AT2894生产厂家：RAY
AT2894制作材料：Si-PNP
AT2894性质：射频/高频放大 （HF）
AT2894封装形式：
AT2894极限工作电压：15V
AT2894最大电流允许值：0.14A
AT2894最大工作频率：500MHZ
AT2894引脚数：
AT2894最大耗散功率：
AT2894放大倍数：
AT2894图片代号：NO
AT2894vtest：15
AT2894htest：500000000
- AT2894atest：.14
AT2894wtest：0
AT2894代换 AT2894用什么型号代替：AT3209,
AT28价格
参考价格：￥41.1566
型号：AT28BV256-20JU 品牌：Atmel 备注：这里有AT28多少钱，2024年最近7天走势，今日出价，今日竞价，AT28批发/采购报价，AT28行情走势销售排行榜，AT28报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 |  |   | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
16K 2K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV16isalow-power,high-performanceElectricallyErasableandProgrammableReadOnlyMemorywitheasytousefeatures.TheAT28BV16isa16Kmemory organizedas2,048wordsby8bits.ThedeviceismanufacturedwithAtmel’sreliablenonvolatileCMOStechnology. TheAT28BV1 | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K 8K x 8 Battery-Voltage CMOS E2PROM Description TheAT28BV64isalow-voltage,low-powerElectricallyErasableandProgrammableReadOnlyMemoryspecificallydesignedforbatterypoweredapplications.Its64Kofmemoryisorganized8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoff | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description TheAT28BV64Bisahigh-performanceelectricallyerasableprogrammablereadonlymemory(EEPROM).Its64Kofmemoryisorganizedas8,192wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto200nswithpowerdissipationof | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
Space 1-megabit (128K x 8) Paged Parallel EEPROMs Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | | |
1 Megabit 128K x 8 Paged CMOS E2PROM TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | |
AT28产品属性
- 类型
描述
- 型号
AT28
- 制造商
ADAPTAFLEX
- 功能描述
FLANGE MNT 45D 28MM BK/YL PK10
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATMEL |
21+ |
TSSOP |
100 |
原装现货。假一赔十 |
|||
ATMEL |
22+ |
SOP24 |
2317 |
品牌专业分销商,可以零售 |
|||
Atmel |
23+ |
24-PDIP |
209250 |
专业分销产品!原装正品!价格优势! |
|||
Microchip |
21+ |
32PLCC |
13880 |
公司只售原装,支持实单 |
|||
ATMEL |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
|||
ATMEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
ATMEL |
0133+ |
PLCC-32 |
83 |
原装现货海量库存欢迎咨询 |
|||
AT |
23+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
Atmel |
2022 |
ICEEPROM16KBIT250NS28TSO |
5058 |
原厂原装正品,价格超越代理 |
|||
ATMEL |
22+ |
TSOP |
8200 |
原装现货库存.价格优势!! |
AT28芯片相关品牌
AT28规格书下载地址
AT28参数引脚图相关
- bf419
- BDM
- bcm2727
- bcm
- bc01
- ba028
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- AT324
- AT322
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- AT3209
- AT32011BLK
- AT319
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- AT31033
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- AT3101S
- AT31001
- AT-310
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- AT-306
- AT30533
- AT30511
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- AT302
- AT3019
- AT2PT4
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- AT2PT1
- AT2PE1
- AT2PB1
- AT2PA6
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- AT2946A
- AT2945A
- AT2907A
- AT2906A
- AT2905A
- AT2904A
- AT28C64
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- AT2894A
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- AT-280
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- AT-2600
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- AT25320
- AT25256
- AT25160
- AT25128
- AT25080
- AT25040
- AT25020
- AT25010
- AT2484A
- AT2484
- AT2368A
- AT2368
- AT2222A
- AT2221A
- AT2219A
- AT2218A
- AT216
- AT21400
- AT210
- AT209
- AT208
- AT207
- AT202
- AT201
AT28数据表相关新闻
AT27C512R-45JU
www.58chip.com
2022-5-7AT27LV020A-12JC 可擦除可编程ROM
AT27LV020A-12JC可擦除可编程ROM
2020-12-15AT27LV010A-70JU，AT27LV010A-70TC，AT27LV010A90TC
AT27LV010A-70JU，AT27LV010A-70TC，AT27LV010A90TC
2020-4-8AT28C256-20LM/883一级代理Atmel存储器IC
制造商:Microchip 产品种类:电可擦除可编程只读存储器 安装风格:SMD/SMT 封装/箱体:LCC-32 存储容量:256kbit 组织:32kx8 接口类型:Serial，4-Wire，SDI，SPI 访问时间:150ns 数据保留:10Year 电源电流—最大值:50mA 电源电压-最小:4.5V 电源电压-最大:5.5V 最小工作温度
2019-11-29AT28C256-15LM/883
制造商:Microchip 产品种类:电可擦除可编程只读存储器 发货限制： Mouser目前在您所在地区不销售该产品。 RoHS:详细信息 安装风格:SMD/SMT 封装/箱体:LCC-32 存储容量:256kbit 组织:32kx8 接口类型:Serial，4-Wire，SDI，SPI 访问时间:150ns 数据保留:10Year 电源电流—
2019-11-29AT28C010-12DM/883电可擦除可编程只读存储器
制造商:Microchip 产品种类:电可擦除可编程只读存储器 发货限制： Mouser目前在您所在地区不销售该产品。 RoHS:N 安装风格:ThroughHole 封装/箱体:Cerdip-32 存储容量:1Mbit 组织:128kx8 接口类型:Parallel 访问时间:120ns 数据保留:10Year 最大时钟频率:5MHz 电源电流
2019-11-29
DdatasheetPDF页码索引
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