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ASI价格
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型号：ASI12N35MQ 品牌：Mallory Sonalert 备注：这里有ASI多少钱，2024年最近7天走势，今日出价，今日竞价，ASI批发/采购报价，ASI行情走势销售排行榜，ASI报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
May not be suitable for all Medical and Aerospace applications. ContactMallorySonalerttodiscussyourapplication. | MSPIMallory Sonalert Products Inc 马洛里马洛里索纳特产品有限公司 |  |   | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBmin.at1.0W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc |  | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1002isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBminat2W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1005isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBminat5W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1010isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBmin.at10W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1020isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=10dBmin.at20W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN RF POWER TRANSISTOR DESCRIPTION: TheASIHF220-50FisaCommonEmitterDeviceDesignedforSSBTransmitterApplicationsinthe2to30MHzBand. FEATURESINCLUDE: •PG=13dBmin.@30MHz •GoldMetallization •EmitterBallasting | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF427isDesignedforhighvoltageapplicationsupto30MHz FEATURES: •PG=18dBmin.at25W/30MHz •IMD3=-34dBcmax.at25W(PEP) •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIBLV33FisDesignedforOperationinBandIIITVTransposersandTransmitterAmplifiersfrom170to230MHz. FEATURES: •GoldMetalization •InternalInputMatching •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIUMIL20isaCommonEmitterDeviceDesignedforClassA,ABandCAmplifierApplicationsinthe225to400MHzMilitaryCommunicationsBand. FEATURES: •DirectReplacementforMRF323 •PG=12dBTypicalat400MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR006isDesignedfor FEATURES: ●InputMatchingNetwork ●Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR015isanNPNsiliconbipolartransistordesignedforL-Bandpulsedradarapplications.ItutilizesinternalmatchingandgoldmetalizationforhighreliabilityandgoodVSWRcapability. FEATURES: •1.2to1.4GHzoperation •InternalInput/OutputMatchingNet | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR030isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=7.0dBat30W/1400MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR060isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=6.5dBat60W/1400MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR100isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=6.0dBat100W/1400MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR200isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=7.0dBat200W/1400MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIALR325isDesignedfor1200–1400MHz,L-BandApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=6.5dbat325W/1400MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIASAT10isDesignedforGeneralPurposeClassCOperationsupto1.7GHz. FEATURES: •InternalInputMatchingNetwork •PG=11dBat10W/1.7GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIASAT15isDesignedforGeneralPurposeClassOperationsupto1.7GHz. FEATURES: •IntenalInputMatchingNetwork •PG=9.2dBat15W/1.7GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIASAT20isDesignedforGenralPurposeClassCOperationupto1.7GHz. FEATURES: •InternalInputMatchingNetwork •PG=8.0dBat20W/1.7GHz •Omnigold™MetalizationSystem/NitridePassivation •CommonBaseClassC | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIASAT25isDesignedfor FEATURES: •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIASAT30isDesignedforGeneralPurposeClassCOperationupto1.7GHz. FEATURES: •InternalInput/OutputMatchingNetwork •PG=9.0dBat30W/1.7GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBmin.at1.0W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1002isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBminat2W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1005isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBminat5W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1010isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=12dBmin.at10W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI1020isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: •PG=10dBmin.at20W/1,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto2300MHz. FEATURES: •PG=10dBmin.at1.0W/2,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2003isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto2300MHz. FEATURES: •PG=10dBmin.at3W/2,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2005isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto2300MHz. FEATURES: •PG=10dBmin.at5W/2,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2010isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto2300MHz. FEATURES: •PG=5dBmin.at10W/2,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2223-4isDesignedforGeneralPurposeClaccCApplicationsupto2.3GHz. FEATURES: •InternalInput/OutputMatchingNetworks •PG=8.0dBat4.0W/2.3GHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2223-12isDesignedfor FEATURES: •InputMatchingNetwork •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2223-20isaCommonBaseDeviceDesignedforPulsedS-BandRadarAmplifierApplications FEATURES: •InternalInput/OutputMatchingNetworks •EmitterBalasting •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2302isDesignedforGeneralpurposeClassCPowerAmplifierApplicationsupto3000MHz. FEATURES: •PG=9.5dBmin.at2W/2300MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2304isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsuptp3000MHz. FEATURES: •PG=9.5dBmin.at4W/2300MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI2307isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto3000MHz. FEATURES: •PG=9.5dBmin.at7W/2300MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI3000isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto3500MHz. FEATURES: •PG=7dBmin.at0.5W/3,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI3001isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto3500MHz. FEATURES: •PG=7dBmin.at1.0W/3,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI3003isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto3500MHz. FEATURES: •PG=5dBmin.at3W/3,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheisDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto3500MHz. FEATURES: •PG=4.5dBmin.at5W/3,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheisDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto3500MHz. FEATURES: •PG=4.5dBmin.at5W/3,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI4000isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto4200MHz. FEATURES: •PG=5dBmin.at0.5W/4,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI4001isDesignedforGeneralPurposeCalssCPowerAmplifierApplicationsupto4200MHz. FEATURES: •PG=5dBmin.at1.0W/4,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASI4003isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto4200MHz. FEATURES: •PG=5dBmin.at3W/4,000MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAJT006isDesignedfor9–1215MHz,JTIDSApplications. FEATURES: •InternalInput/OutputMatchingNetwork •PG=9.3dBat6.0W/1215MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAJT015isDesignedfor FEATURES: •InputMatchingNetwork •·Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAJT030isDesignedfor FEATURES: •InputMatchingNetwork •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAJT085isanRFpowertransistor,designedforpulsedavionicsapplicationswithhighdutycycle. FEATURES: •960-1215MHz •InternalInput/OutputMatchingNetwork •PG=7.5dBat85W/1215MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAJT150isDesignedfor FEATURES: ●InputMatchingNetwork ●Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheAUR300isDesignedforClassCUHFRadarApplicationsupto500MHz. FEATURES: •InternalInputMatchingNetwork •PG=9.5dBat300W/500MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheAUR500isdesignedforhighpeakpower&lowdutycycleapplications,inthe400-500MHz. FEATURES: •InternalInputMatchingNetwork •PG=9.5dBat500W/500MHz •Omnigold™MetalizationSystem •EmitterBallasting •CommomnBase | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAVD0.5PisDesignedfor FEATURES: •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAVD002FisDesignedforClassC,DME/TACANApplicationsupto1150MHz. FEATURES: •InternalInputMatchingNetwork •PG=9.0dBat2.0W/1150MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAVD002PisDesignedforClassC,DME/TACANApplicationsupto1150MHz. FEATURES: •ClassCOperation •PG=9.0dBat2.0W/1150MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAVD004FisDesignedfor FEATURES: •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAVD004PisDesignedfor FEATURES: •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAVD015FisDesignedforClassC,DME/TACANApplicationsupto1150MHz . FEATURES: •ClassCOperation •PG=10dBat15W/1150MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAVD015PisDesignedforClassC,DME/TACANApplicationsupto1150MHz. FEATURES: •ClassCOperation •PG=10dBat15W/1150MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIAVD035FisamediumpowerClassCtransistorforpulsedL-Bandavionics,DME/TACANApplications. FEATURES: •ClassCOperation •PG=10dBat35W/1150MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor, Inc | | |
ASI产品属性
- 类型
描述
- 型号
ASI
- 制造商
ASI
- 制造商全称
ASI
- 功能描述
NPN SILICON RF POWER TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
22+ |
BGA |
8200 |
原装现货库存.价格优势!! |
|||
ASI |
2017+ |
CSOP28 |
21455 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
|||
ASI |
21+ |
CSOP28 |
1574 |
||||
ASI |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
ASI |
21+ |
标准封装 |
27000 |
进口原装,优势专营品牌! |
|||
ASI |
23+ |
原厂封装 |
5177 |
现货 |
ASI芯片相关品牌
ASI规格书下载地址
ASI参数引脚图相关
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- ASH7KW-32.768KHZ-L-T
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- ASGTX-P-49.152MHZ-1
- ASGTX-P-24.576MHZ-1
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- ASGTX-P-120.000MHZ-1
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- ASGTX-P-1.000GHZ-1
- ASGTX-EVAL
- ASGTX-D-500.000MHZ-1
ASI数据表相关新闻
ASI301TRQ
ASI301TRQ
2024-3-15ASL2417SHN
ASL2417SHN
2023-12-8ASE-50.000MHZ-LC-T
ASE-50.000MHZ-LC-T
2023-2-10ASE-25.000MHZ-LR-T
原装正品现货
2022-10-8ASFL1-12.288MHZ-EC-T
ASFL1-12.288MHZ-EC-T振荡器12.288MHzHCMOS，TTLXO（标准）3.3V启用/禁用4-SMD，无引线
2021-10-13ASM1153E全新原装现货
ASM1153E，当天发货0755-82732291全新原装现货或门市自取.
2020-11-17
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