型号 功能描述 生产厂家&企业 LOGO 操作
APT50M80

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •IdenticalSpecific

ADPOW

Advanced Power Technology

ADPOW
APT50M80

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSVI™ PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliver

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •IdenticalSpecific

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=58A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.08Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSVI™ PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,delivers

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSVI™ PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliver

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=58A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:420.23 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERMOSV

文件:97.37 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

POWERMOSV

文件:97.37 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

POWERMOSV

文件:95.91 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

POWERMOSV

文件:95.91 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

POWERMOSV

文件:97.37 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

文件:299.96 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERMOSV

文件:95.91 Kbytes Page:4 Pages

ADPOW

Advanced Power Technology

ADPOW

APT50M80产品属性

  • 类型

    描述

  • 型号

    APT50M80

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更新时间:2024-5-17 23:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
APT
2018+
module
6000
全新原装正品现货,假一赔佰
APT
24+
TO247
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
APT
22+
模块
3500
原装现货,可开13%税票
Microsemi/Microsemi Corporatio
21+
TO-264L
100
优势代理渠道,原装正品,可全系列订货开增值税票
APT
2048+
TO-3P
9851
只做原装正品现货!或订货假一赔十!
APT
21+
TO-247
12588
全新原装深圳现货
APT
模块
6000
原装现货,长期供应,终端可账期
Microsemi
21+
TO-264L
100
原装现货假一赔十
APT
2018
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

APT50M80芯片相关品牌

  • ALLIED
  • DIODES
  • EATON
  • etc2
  • HARTING
  • Littelfuse
  • MERITEK
  • MOLEX1
  • NSC
  • RALTRON
  • SUMIDA
  • TEC

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