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APT34N80价格
参考价格：￥45.9301
型号：APT34N80B2C3G 品牌：Microsemi 备注：这里有APT34N80多少钱，2024年最近7天走势，今日出价，今日竞价，APT34N80批发/采购报价，APT34N80行情走势销售排行榜，APT34N80报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=34A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.145Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=34A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.145Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SuperJunctionMOSFET 文件：256.329 Kbytes Page：5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
SuperJunctionMOSFET 文件：182.51 Kbytes Page：5 Pages | ADPOW Advanced Power Technology |  | | |
SuperJunctionMOSFET 文件：182.51 Kbytes Page：5 Pages | ADPOW Advanced Power Technology | | | |
SuperJunctionMOSFET 文件：256.329 Kbytes Page：5 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs SingleMOSFETDie AvalancheRated Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •Fastintrin | IXYS IXYS Integrated Circuits Division |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=34A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SingleMOSFETDieAvalancheRated HiPerFET™PowerMOSFETsISOPLUS247™(ElectricallyIsolatedBackside) SingleMOSFETDie AvalancheRated Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=34A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HiPerFETTMPowerMOSFETsSingleDieMOSFET 文件：129.789 Kbytes Page：4 Pages | IXYS IXYS Integrated Circuits Division | | |
APT34N80产品属性
- 类型
描述
- 型号
APT34N80
- 制造商
MICROSEMI
- 制造商全称
Microsemi Corporation
- 功能描述
Super Junction MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI/美高森美 |
22+ |
TO247 |
11517 |
郑重承诺只做原装进口现货 |
|||
MICROSEMI |
TO247 |
6000 |
原装现货,长期供应,终端可账期 |
||||
APT |
23+ |
TO-247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
APT |
18+ |
TO-247 |
2050 |
公司大量全新原装 正品 随时可以发货 |
|||
Microchip |
21+ |
15000 |
只做原装 |
||||
MICROSEMI |
20+ |
TO247 |
2542 |
全新原装亏本出13157115792 |
|||
APT |
23+ |
T-MAX |
10000 |
公司只做原装正品 |
|||
APT |
08+(pbfree) |
8866 |
|||||
MICROSEMI/美高森美 |
2023+ |
TO247 |
1952 |
原厂全新正品旗舰店优势现货 |
|||
APT |
23+ |
TO-247 |
95 |
原装正品,假一罚十! |
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APT34N80规格书下载地址
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DdatasheetPDF页码索引
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