Power Semiconductors Power Modules RF Power MOSFETs

POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon

Power Semiconductors Power Modules RF Power MOSFETs

POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon

2.0x1.25mm SMD CHIP LED LAMP

SUPERTHINSMDCHIPLED2012(0805) UNIT:MM(INCH) TOLERANCE:±0.1[±0.004]UNLESSOTHERWISENOTED

2.0x1.25 mm INFRARED EMITTING DIODE

DESCRIPTION ●F3MadewithGalliumArsenideInfraredEmittingdiodes FEATURES ●2.0mmx1.25mmSMDLED,0.75mmthickness ●Mechanicallyandspectrallymatchedtothe phototransistor ●Package:2000pcs/reel ●Moisturesensitivitylevel:3 ●Halogen-free ●RoHScompliant APPLICATI

2.0 x 1.25 mm Infrared Emitting Diode

DESCRIPTION ●F3MadewithGalliumArsenideInfraredEmittingdiodes FEATURES ●2.0mmx1.25mmSMDLED,0.75mmthickness ●Mechanicallyandspectrallymatchedtothephototransistor ●Package:2000pcs/reel ●Moisturesensitivitylevel:3 ●RoHScompliant APPLICATIONS ●InfraredIllu

2.0 x 1.25 mm Infrared Emitting Diode

DESCRIPTION ●F3MadewithGalliumArsenideInfraredEmittingdiodes FEATURES ●2.0mmx1.25mmSMDLED,0.75mmthickness ●Mechanicallyandspectrallymatchedtothephototransistor ●Package:2000pcs/reel ●Moisturesensitivitylevel:3 ●RoHScompliant APPLICATIONS ●InfraredIllu

2.0 x 1.25 mm Infrared Emitting Diode

DESCRIPTION ●F3MadewithGalliumArsenideInfraredEmittingdiodes FEATURES ●2.0mmx1.25mmSMDLED,0.75mmthickness ●Mechanicallyandspectrallymatchedtothephototransistor ●Package:2000pcs/reel ●Moisturesensitivitylevel:3 ●RoHScompliant APPLICATIONS ●InfraredIllu

2.0x1.25mm SMD CHIP LED LAMP

SUPERTHINSMDCHIPLED2012(0805) UNIT:MM(INCH) TOLERANCE:±0.1[±0.004]UNLESSOTHERWISENOTED

2.0x1.25mm SMD CHIP LED LAMP

SUPERTHINSMDCHIPLED2012(0805) UNIT:MM(INCH) TOLERANCE:±0.1[±0.004]UNLESSOTHERWISENOTED

2.0x1.2mm SMD CHIP LED LAMP

SUPERTHINSMDCHIPLED2012(0805)

2.0x1.25mm SMD CHIP LED LAMP

Description TheBluesourcecolordevicesaremadewithInGaNonSiCLightEmittingDiode. Features ●2.0mmx1.2mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE. ●ACCORDINGTOTHECLAS

2.0x1.25mm SMD CHIP LED LAMP

Description TheBluesourcecolordevicesaremadewithInGaNonSiCLightEmittingDiode. Features ●2.0mmx1.2mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE. ●ACCORDINGTOTHECLAS

2.0x1.25mm SMD CHIP LED LAMP

Description TheBluesourcecolordevicesaremadewithInGaNonSiCLightEmittingDiode. StaticelectricityandsurgedamagetheLEDS. Itisrecommendedtouseawristbandoranti-electrostaticglovewhenhandlingtheLEDs. Alldevices,equipmentandmachinerymustbeelectricallygrounded.

2.0x1.25mm SMD CHIP LED LAMP

Description TheBluesourcecolordevicesaremadewithInGaNonSiCLightEmittingDiode. StaticelectricityandsurgedamagetheLEDS. Itisrecommendedtouseawristbandoranti-electrostaticglovewhenhandlingtheLEDs. Alldevices,equipmentandmachinerymustbeelectricallygrounded.

2.0x1.25mm SMD CHIP LED LAMP

SUPERTHINSMDCHIPLED2012(0805) UNIT:MM(INCH) TOLERANCE:±0.1[±0.004]UNLESSOTHERWISENOTED

2.0x1.25mm SMD CHIP LED LAMP

Description TheSuperBrightOrangedeviceismadewithDHInGaAlP(onGaAssubstrate)lightemittingdiodechip. Features ●2.0mmx1.25mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE.

2.0x1.25 mm INFRARED EMITTING DIODE

Description SF4MadewithGalliumAluminumArsenideInfraredEmittingdiodes. Features ●2.0mmx1.25mmSMTLED,0.75mmTHICKNESS. ●MECHANICALLYANDSPECTRALLYMATCHEDTO THEPHOTOTRANSISTOR. ●WATERCLEARLENS. ●PACKAGE:2000PCS/REEL. ●MOISTURESENSITIVITYLEVEL:LEVEL3. ●RoHSCO

Mechanically and spectrally matched to the phototransistor

DESCRIPTION ●SF4MadewithGalliumAluminumArsenideInfrared Emittingdiodes FEATURES ●2.0mmx1.25mmSMDLED,0.75mmthickness ●Mechanicallyandspectrallymatchedtothe phototransistor ●Package:2000pcs/reel ●Moisturesensitivitylevel:3 ●Halogen-free ●RoHScomplia

2.0x1.25 mm INFRARED EMITTING DIODE

Description SF4MadewithGalliumAluminumArsenideInfraredEmittingdiodes. Features ●2.0mmx1.25mmSMDLED,0.75mmthickness. ●Mechanicallyandspectrallymatchedtothephototransistor. ●Package:2000pcs/reel. ●Moisturesensitivitylevel:level3. ●RoHScompliant.

Gallium Phosphide Green Light Emitting Diode.

Description TheSuperBrightGreensourcecolordevicesaremadewithGalliumPhosphideGreenLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE

2.0 x 1.25 mm SMD Chip LED Lamp

[HKTO-GRACETECHNOLOGYCO.,LTD.] DESCRIPTION •TheSuperBrightGreensourcecolordevicesaremadewithGalliumPhosphideGreenLightEmittingDiode FEATURES •2.0mmx1.25mmSMDLED,0.75mmthickness •Lowpowerconsumption •Wideviewingangle •Idealforbacklightandindicator •P

2.0x1.25mm SMD CHIP LED LAMP

Description TheSuperBrightRedsourcecolordevicesaremadewithGalliumAluminumArsenideRedLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAIL

2.0x1.25mm SMD CHIP LED LAMP

Description TheHyperRedsourcecolordevicesaremadewithDHInGaAlPonGaAssubstrateLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE. ●

2.0x1.25mm SMD CHIP LED LAMP

Description TheHyperRedsourcecolordevicesaremadewithDHInGaAlPonGaAssubstrateLightEmittingDiode. Features ●2.0mmx1.25mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE. ●

2.0x1.2mm SMD CHIP LED LAMP

Description TheSuperBrightYellowdeviceismadewithDHInGaAlP(onGaAssubstrate)lightemittingdiodechip. Features ●2.0mmx1.25mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE.

2.0x1.25mm SMD CHIP LED LAMP

Description TheSuperBrightYellowdeviceismadewithDHInGaAlP(onGaAssubstrate)lightemittingdiodechip. Features ●2.0mmx1.25mmSMTLED,0.75mmTHICKNESS. ●LOWPOWERCONSUMPTION. ●WIDEVIEWINGANGLE. ●IDEALFORBACKLIGHTANDINDICATOR. ●VARIOUSCOLORSANDLENSTYPESAVAILABLE.

The Fast IGBT is a new generation of high voltage power IGBTs.

FastIGBT TheFastIGBTisanewgenerationofhighvoltagepowerIGBTs.UsingNon-PunchThroughTechnologytheFastIGBTofferssuperiorruggedness,fastswitchingspeedandlowCollector-EmitterOnvoltage. •LowForwardVoltageDrop •HighFreq.Switchingto20KHz •LowTailCurrent •Ultr

The Fast IGBT??is a new generation of high voltage power IGBTs.

TheFastIGBT™isanewgenerationofhighvoltagepowerIGBTs.UsingNonPunchThroughTechnologytheFastIGBT™combinedwithanAPTfreewheelingultraFastRecoveryEpitaxialDiode(FRED)offerssuperiorruggednessandfastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto

FAST IGBT & FRED

TheFastIGBTisanewgenerationofhighvoltagepowerIGBTs.UsingNon-Punchthroughtechnology,theFastIGBTcombinedwithanAPTfreewheelingUltraFastRecoveryEpitaxialDiode(FRED)offerssuperiorruggednessandfastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto

FAST IGBT & FRED

TheFastIGBTisanewgenerationofhighvoltagepowerIGBTs.UsingNon-Punchthroughtechnology,theFastIGBTcombinedwithanAPTfreewheelingUltraFastRecoveryEpitaxialDiode(FRED)offerssuperiorruggednessandfastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto

The Fast IGBT is a new generation of high voltage power IGBTs.

FastIGBT TheFastIGBTisanewgenerationofhighvoltagepowerIGBTs.UsingNon-PunchThroughTechnologytheFastIGBTofferssuperiorruggedness,fastswitchingspeedandlowCollector-EmitterOnvoltage. •LowForwardVoltageDrop •HighFreq.Switchingto20KHz •LowTailCurrent •Ultr

FAST IGBT & FRED

TheFastIGBTisanewgenerationofhighvoltagepowerIGBTs.UsingNon-Punchthroughtechnology,theFastIGBTcombinedwithanAPTfreewheelingUltraFastRecoveryEpitaxialDiode(FRED)offerssuperiorruggednessandfastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto

FAST IGBT & FRED

TheFastIGBTisanewgenerationofhighvoltagepowerIGBTs.UsingNon-Punchthroughtechnology,theFastIGBTcombinedwithanAPTfreewheelingUltraFastRecoveryEpitaxialDiode(FRED)offerssuperiorruggednessandfastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto

Power Semiconductors Power Modules RF Power MOSFETs

POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon

The Thunderbolt IGBT??is a new generation of high voltage power IGBTs.

ThunderboltIGBT™ TheThunderboltIGBT™isanewgenerationofhighvoltagepowerIGBTs.UsingNon-PunchThroughTechnologytheThunderboltIGBT™offerssuperiorruggednessandultrafastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto150KHz •LowTailCurrent •UltraLo

The Thunderbolt IGBT??is a new generation of high voltage power IGBTs.

ThunderboltIGBT™ TheThunderboltIGBT™isanewgenerationofhighvoltagepowerIGBTs.UsingNon-PunchThroughTechnologytheThunderboltIGBT™offerssuperiorruggednessandultrafastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto150KHz •LowTailCurrent •UltraLo

Thunderbolt IGBT

ThunderboltIGBT® TheThunderblotIGBT®isanewgenerationofhighvoltagepowerIGBTs.UsingNon-PunchThroughTechnology,theThunderblotIGBT®offerssuperiorruggednessandultrafastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto150KHz •LowTailCurrent •Ultra

Thunderbolt IGBT

ThunderboltIGBT® TheThunderblotIGBT®isanewgenerationofhighvoltagepowerIGBTs.UsingNon-PunchThroughTechnology,theThunderblotIGBT®offerssuperiorruggednessandultrafastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto150KHz •LowTailCurrent •Ultra

The Thunderbolt IGBT??is a new generation of high voltage power IGBTs.

ThunderboltIGBT™ TheThunderboltIGBT™isanewgenerationofhighvoltagepowerIGBTs.UsingNon-PunchThroughTechnologytheThunderboltIGBT™offerssuperiorruggednessandultrafastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto150KHz •LowTailCurrent •UltraLo

The Thunderbolt IGBT??is a new generation of high voltage power IGBTs.

ThunderboltIGBT™ TheThunderboltIGBT™isanewgenerationofhighvoltagepowerIGBTs.UsingNon-PunchThroughTechnologytheThunderboltIGBT™offerssuperiorruggednessandultrafastswitchingspeed. •LowForwardVoltageDrop •HighFreq.Switchingto150KHz •LowTailCurrent •UltraLo

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWERMOS7™FREDFET PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesa

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

POWER MOS V

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

POWERMOS7®MOSFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalon

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWERMOS7®FREDFET PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalo

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

POWERMOS7™ PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit