型号 功能描述 生产厂家&企业 LOGO 操作

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

ADPOW

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelay

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

ADPOW

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelay

ADPOW

Advanced Power Technology

ADPOW

APT1201R6BVFRG产品属性

  • 类型

    描述

  • 型号

    APT1201R6BVFRG

  • 功能描述

    MOSFET N-CH 1200V 8A TO-247

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    POWER MOS V®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2024-5-24 8:48:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APTMICROSEMI
23+
D3S
90000
只做原厂渠道价格优势可提供技术支持
APT
22+
TO-247
8000
原装正品支持实单
APT
18+
TO-247
2050
公司大量全新原装 正品 随时可以发货
ADPOW
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
MICROCHIP(美国微芯)
23+
TO2473
6000
MICROSEMI/美高森美
21+
D3PAK
120000
长期代理优势供应
MICROCHIP
2022+
SOP16
6000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
APTMICROS
13+
D3PAK
80
全新原装,支持实单,假一罚十,德创芯微
Microsemi/Microsemi Corporatio
21+
D3PAK
80
优势代理渠道,原装正品,可全系列订货开增值税票
MICROSEMI/美高森美
23+
D3PAK
20000
原装正品 欢迎咨询

APT1201R6BVFRG芯片相关品牌

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  • YAMAICHI

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