N-ChannelEnhancementModeMOSFET

Features •30V/8A,RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=23mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystem

N-ChannelEnhancementModeMOSFET

Features •30V/8A,RDS(ON)=15mΩ(typ.)@VGS=10V RDS(ON)=23mΩ(typ.)@VGS=4.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystem

HighPerformInstr,1Pr#16StrTC,PVCInsE2,PVCJkt,PLTC

ProductDescription HighPerformanceInstrumentation,1Pair16AWG(19x29)TinnedCopper,PVCInsulationE2ColorCode,PVCOuterJacket,PLTC

SingleN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesareparticularlysuitedforlow

MACHINESCREWPANPHILLIPS10-32

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N-Channel20V(D-S)MOSFET

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6-32BINDINGHEADSCREW

文件：248.52 Kbytes Page：1 Pages