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AP9价格
参考价格：￥1.0702
型号：AP9050FDB-7 品牌：Diodes 备注：这里有AP9多少钱，2024年最近7天走势，今日出价，今日竞价，AP9批发/采购报价，AP9行情走势销售排行榜，AP9报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Lower On- resistance, Simple Drive Requirement Description TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.Thethrough-holeversion(AP90T03GJ)isavailableforlow-profileapplications. ▼LowerOn-resistance ▼SimpleDriveRe | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 |  |   | |
Lower On- resistance, Simple Drive Requirement Description TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.Thethrough-holeversion(AP90T03GJ)isavailableforlow-profileapplications. ▼LowerOn-resistance ▼SimpleDriveRe | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Fast Switching Performance, Single Drive Requirement Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220CFMisolationpackageiswidelypreferredforcommercial-industrialthroughholeapplications. ▼Fast | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Lower On- resistance, Simple Drive Requirement Description TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.Thethrough-holeversion(AP90T03GJ)isavailableforlow-profileapplications. ▼LowerOn-resistance ▼SimpleDriveRe | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ▼LowerOn-resistance ▼SimpleDriveRequirement ▼FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Lower On- resistance, Simple Drive Requirement Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-263packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Lower On- resistance, Simple Drive Requirement Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-263packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Lower On- resistance, Simple Drive Requirement Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageiswidelypreferredforcommercial-industrialpowerapplicationsandsuitedforlowvoltageapplic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
SINGLE CHIP BATTERY PROTECTION SOLUTION FOR 1-CELL Li BATTERY PACK Description TheAP9221isasingle-chipprotectionsolutionspeciallydesignedfor1-cellLi+rechargeablebatterypackapplications. TheAP9221includesa1-cellLithiumionbatteryprotectionchipanddualN-CHMOSFETwithcommondrain. TheAP9221providesrichbatteryprotectionfeaturesa | DIODESDiodes Incorporated 达尔科技 |  | | |
SINGLE CHIP BATTERY PROTECTION SOLUTION FOR 1-CELL Li BATTERY PACK Description TheAP9221isasingle-chipprotectionsolutionspeciallydesignedfor1-cellLi+rechargeablebatterypackapplications. TheAP9221includesa1-cellLithiumionbatteryprotectionchipanddualN-CHMOSFETwithcommondrain. TheAP9221providesrichbatteryprotectionfeaturesa | DIODESDiodes Incorporated 达尔科技 | | | |
SINGLE CHIP BATTERY PROTECTION SOLUTION FOR 1-CELL Li BATTERY PACK Description TheAP9221isasingle-chipprotectionsolutionspeciallydesignedfor1-cellLi+rechargeablebatterypackapplications. TheAP9221includesa1-cellLithiumionbatteryprotectionchipanddualN-CHMOSFETwithcommondrain. TheAP9221providesrichbatteryprotectionfeaturesa | DIODESDiodes Incorporated 达尔科技 | | | |
SINGLE CHIP BATTERY PROTECTION SOLUTION FOR 1-CELL Li BATTERY PACK Description TheAP9221isasingle-chipprotectionsolutionspeciallydesignedfor1-cellLi+rechargeablebatterypackapplications. TheAP9221includesa1-cellLithiumionbatteryprotectionchipanddualN-CHMOSFETwithcommondrain. TheAP9221providesrichbatteryprotectionfeaturesa | DIODESDiodes Incorporated 达尔科技 | | | |
SINGLE CHIP BATTERY PROTECTION SOLUTION FOR 1-CELL Li BATTERY PACK Description TheAP9221isasingle-chipprotectionsolutionspeciallydesignedfor1-cellLi+rechargeablebatterypackapplications. TheAP9221includesa1-cellLithiumionbatteryprotectionchipanddualN-CHMOSFETwithcommondrain. TheAP9221providesrichbatteryprotectionfeaturesa | DIODESDiodes Incorporated 达尔科技 | | | |
Low On-resistance, Simple Drive Requirement Description TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign, | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Simple Drive Requirement, Fast Switching Characteristic Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSO-8packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvol | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.Thethrough-holeversion(AP9578GJ)isavailableforlow-profileapplications. ▼LowerOn-resistance ▼SimpleDri | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltageapplicationssuchasDC/DCconverters.Thethrough-holeversion(AP9578GJ)isavailableforlow-profileapplications. ▼LowerOn-resistance ▼SimpleDri | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Low on-resistance, Capable of 2.5V gate drive Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Lowon-resistance Capableof2.5Vgatedrive Lowdrivecurrent Surfacemountpackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Low on-resistance, Capable of 2.5V gate drive Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Lowon-resistance Capableof2.5Vgatedrive Lowdrivecurrent Surfacemountpackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Low on-resistance, Capable of 2.5V gate drive Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼Lowon-resistance ▼Capableof2.5Vgatedrive ▼Lowdrivecurrent ▼Surfacemountpackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Low on-resistance, Capable of 2.5V gate drive Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼Lowon-resistance ▼Capableof2.5Vgatedrive ▼Lowdrivecurrent ▼Surfacemountpackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼Lowon-resistance ▼Capableof2.5Vgatedrive ▼Lowdrivecurrent ▼Surfacemountpackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼Lowon-resistance ▼Capableof2.5Vgatedrive ▼Lowdrivecurrent ▼Surfacemountpackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AP9938seriesarefromAdvancedPowerinnovateddesignandsiliconprocesstechnologytoachievethelowestpossibleonresistanceandfastswitchingperformance.Itprovidesthedesignerwithanextremeefficientdeviceforuseinawiderangeofpowerapplications ▼SimpleDri | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼Lowon-resistance ▼Capableof1.8VGateDrive ▼OptimalDC/DCBatteryApplication ▼HalogenFree | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼LowOn-Resistance ▼FastSwitchingSpeed ▼SurfaceMountPackage | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼LowOn-resistance ▼SingleDriveRequirement ▼PDIP-8Package | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltag | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. TheSO-8packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. TheSO-8packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageiswidelypreferredforcommercial-industrialpowerapplicationsandsuitedforlowvoltageapplic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageiswidelypreferredforcommercial-industrialpowerapplicationsandsuitedforlowvoltageapplic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltag | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description TheAdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼LowOn-resistance ▼SingleDriveRequirement ▼SurfaceMountPackage | ADPOW Advanced Power Technology |  | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvolta | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
PROTECTION INTERFACE for PMICs with INTEGRATED OVP CONTROL 文件：168.53 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
PROTECTION INTERFACE for PMICs with INTEGRATED OVP CONTROL 文件：168.53 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
PROTECTION INTERFACE for PMICs with INTEGRATED OVP CONTROL 文件：168.53 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
OVERVOLTAGE CLAMP 文件：305.19 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
OVERVOLTAGE CLAMP 文件：305.19 Kbytes Page：9 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
Simple Drive Requirement 文件：212.61 Kbytes Page：6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：448.04 Kbytes Page：6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Fast Switching Characteristic 文件：103.65 Kbytes Page：5 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Fast Switching Performance 文件：157.91 Kbytes Page：5 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Simple Drive Requirement 文件：135.1 Kbytes Page：4 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Simple Drive Requirement 文件：133.94 Kbytes Page：4 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Simple Drive Requirement 文件：92.75 Kbytes Page：4 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Simple Drive Requirement 文件：99.68 Kbytes Page：5 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | | |
Simple Drive Requirement 文件：133.2 Kbytes Page：4 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | | |
AP9产品属性
- 类型
描述
- 型号
AP9
- 制造商
BLUEBIRD ELECTRONICS
- 功能描述
BAUD RATE MONITOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APEC |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
APEC |
1822+ |
TO-252 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
APEC |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
APEC |
23+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
APEC/富鼎 |
2048+ |
TO-252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
AP/富鼎 |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
APEC |
23+ |
TO252 |
7635 |
全新原装优势 |
|||
APEC |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
VBsemi |
2211+ |
TO252 |
4689 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
原厂 |
2020+ |
TO-252 |
20000 |
公司代理品牌,原装现货超低价清仓! |
AP9芯片相关品牌
AP9规格书下载地址
AP9参数引脚图相关
- bc01
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- at89s52
- at89s51
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- as3410
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- arm11
- APA150-FG256
- APA150-FG144I
- APA1301040001
- APA1000-FG896I
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- APA075-TQG100I
- APA075-TQ100I
- APA075-PQ208I
- APA075-FGG144
- APA075-FG144I
- APA04A03
- AP-A
- AP9T15GH
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- AP9620
- AP9568
- AP9564
- AP9563M
- AP9563J
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- AP9562
- AP9478M
- AP9475M
- AP9452G
- AP9435M
- AP9435K
- AP9319
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- AP8M155-G
- AP8M122-Y
- AP8M122-W
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- AP8M122-A
- AP8M111-Y
- AP8M111-R
- AP8M111-G
- AP8M111-A
- AP8GSDHC6-R
- AP8GSDHC4-B
- AP8GSDHC10U1-B
- AP8GMCSH4-B
- AP8GMCSH10U1-B
- AP8GAH350B-1
- AP8GAH332B-1
- AP8953
- AP8942A
- AP89341
- AP8921A
- AP89170
- aP8910A
- AP89085
- AP89042
- AP89021
- aP89010
- AP8868
- AP8860-18PG
- AP8855-18PL
- AP8853
- AP8842
- AP8836
- AP8821
- AP8803
- AP8802H
- AP8802
- AP8801
- AP8800A
AP9数据表相关新闻
AP8003
原盒原标现货，深圳市拓亿芯电子有限公司
2021-12-17AP9575GM
AP9575GM APM4015PUC-TRL APM4435KC-TRL APM4826KC-TRG IRF7416TRPBF ? IRF7424TRPBF IRF9335TRPBF IRF9530NPBF IRF9Z24NS IRFI540GPBF IRFIZ24NPBF IRFL210TRPBF IRFL9014TRPBF IRFL9110TRPBF IRFR120NTRPBF IRFR4104TRPBF IRFR4620TRPBF IRFR5305TRPBF IRFR540ZTR
2021-7-1AP9575AGH找代理商上深圳百域芯科技
AP9575AGH找代理商上深圳百域芯科技 RiskRank: 5.32 Configuration: SINGLEWITHBUILT-INDIODE DSBreakdownVoltage-Min: 60V DrainCurrent-Max(ID): 17A Drain-sourceOnResistance-Max: 0.064Ω FETTechnology: METAL-OXIDESEMICONDUCTOR JEDEC-95Code: TO-252
2021-7-1AP8022
AP8022，当天发货0755-82732291全新原装现货或门市自取.
2020-11-14AP8012
AP8012，当天发货0755-82732291全新原装现货或门市自取.
2020-11-14AP9211S-AN-HAC-7
製造商:DiodesIncorporated 產品類型:電池管理產品 RoHS:詳細資料 封裝:CutTape 封裝:MouseReel 封裝:Reel 系列:AP9211 品牌:DiodesIncorporated 產品類型:BatteryManagement 原廠包裝數量:3000 子類別:PMIC-PowerManagementICs
2019-11-14
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