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AP2114价格
参考价格：￥0.5385
型号：AP2114H-1.2TRG1 品牌：Diodes 备注：这里有AP2114多少钱，2024年最近7天走势，今日出价，今日竞价，AP2114批发/采购报价，AP2114行情走势销售排行榜，AP2114报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
AP2114 | 1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 |  |   |
AP2114 | 1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：787.94 Kbytes Page：28 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 |  | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE Features •OutputVoltageAccuracy:±1.5 •OutputCurrent:1A(Min) •Fold-backShortCurrentProtection:50mA •LowDropoutVoltage(3.3V):450mV(Typ) @IOUT=1A •Stablewith4.7μFFlexibleCap:Ceramic, TantalumandAluminumElectrolytic •ExcellentLineRegulation:0.02/V(Typ), 0.1/V | DIODESDiodes Incorporated 达尔科技 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：787.94 Kbytes Page：28 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：IC REG LINEAR 1.2V 1A TO252-2 集成电路（IC） 线性 + 开关稳压器 | PAMDiodes Incorporated 龙鼎威 |  | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：IC REG LINEAR 1.8V 1A TO252-2 集成电路（IC） 稳压器 - 线性 | PAMDiodes Incorporated 龙鼎威 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：787.94 Kbytes Page：28 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：787.94 Kbytes Page：28 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：787.94 Kbytes Page：28 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：914.74 Kbytes Page：33 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | | |
1ALOWNOISECMOSLDOREGULATORWITHENABLE 文件：787.94 Kbytes Page：28 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | |
AP2114产品属性
- 类型
描述
- 型号
AP2114
- 制造商
Diodes Incorporated
- 功能描述
LDO CMOS HICURR TO252-2 T&R 2.5K - Tape and Reel
- 制造商
Diodes Incorporated
- 功能描述
IC REG LDO 1.2V 1A TO252-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BCD |
23+ |
TO-252 |
10000 |
原装正品,假一罚十! |
|||
DIODES/美台 |
24+ |
SOT-223 |
26500 |
热卖原装现货 |
|||
AP(友盟) |
21+ |
M |
1780 |
中国航天工业部战略合作伙伴行业领导者 |
|||
Diodes |
21+ |
TO2522 |
13880 |
公司只售原装,支持实单 |
|||
Diodes |
23+ |
TO2522 |
9000 |
原装正品，支持实单 |
|||
DIODES |
23+ |
SOT223 |
6000 |
全新原装现货、诚信经营! |
|||
BCD |
21+ |
TO-252 |
23081 |
原装现货假一赔十 |
|||
DIODES/美台 |
22+ |
SOT-223 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
|||
DIODES达尔 |
23+ |
SOIC-8 |
918000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
2024+实力库存 |
SOT223 |
29985 |
只做原厂渠道 可追溯货源 |
AP2114芯片相关品牌
AP2114规格书下载地址
AP2114参数引脚图相关
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AP2114数据表相关新闻
AP2111H-3.3TRG1
AP2111H-3.3TRG1
2022-5-12AP2127K-ADJTRG1
AP2127K-ADJTRG1
2022-1-15AP2139AK-3.3TRG1全新原装现货
AP2139AK-3.3TRG1，全新原装现货0755-82732291当天发货或门市自取.
2021-1-21AP2045K
AP2045K,TO-252，当天发货0755-82732291全新原装现货或门市自取.
2020-10-26AP2127K-3.3TRG1原装正品现货热卖 有其他物料需求可以请按品牌找业务询价 专注原装用芯服务
AP2127K-3.3TRG1原装正品现货热卖有其他物料需求可以请按品牌找业务询价专注原装用芯服务
2020-7-1AP2004-PWM降压控制器
特点-PWM降压控制电路-工作电压可高达至27V-欠压锁定（UVLO）保护-短路保护（SCP）-软启动电路-可变振荡器频率-300KHz时最大-1.25V参考电压输出-8引脚PDIP和SOP封装应用-背光逆变器-液晶显示器-XDROM，XDSL产品-直流/直流转换器，电脑等AP2004集成脉
2012-12-4
DdatasheetPDF页码索引
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