Common-DrainDualN-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON5810usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8Vwhileretaininga12VVGS(MAX)rating.ItisESDprotected.Thisdeviceissuitableforuseasauni-directionalorbidirectionalloadswit

BiMOSII10-BITSERIAL-INPUT,LATCHEDSOURCEDRIVERSWITHACTIVE-DMOSPULL-DOWNS

TheUCN5810AF,UCN5810EPF,andUCN5810LWFcombinea10-bitCMOSshiftregisterandaccompanyingdatalatches,controlcircuitry,bipolarsourcingoutputswithDMOSactivepull-downs.Designedprimarilytodrivevacuum-fluorescentdisplays,the60Vand-40mAoutputratingsalsoallowthesedevice

NineChannelPMUforMobilePhones

GENERALDESCRIPTION Thepatent-pendingACT5810isacomplete,integratedpowermanagementsolutionthatisidealforCDMAandGSMmobilephones.ThisdeviceintegratesalinearLi+batterychargerwithaninternalpowerMOSFET,sixlowdropoutlinearregulators(LDOs),aresetoutput,andtwoN-C

ADJUSTABLE60VLINEARLEDDRIVER

Features -2.0Vto60VWideInputVoltageRange -AnExternalResistorforSettingCurrent -LowReferenceVoltage(VRSET=0.5V) -AdjustableSinkorSourceLEDCurrentUpto 200mA/200mA(W-DFN2020-3/TO-252) -±3LEDCurrentTolerance@RoomTemp -ParallelDevicestoIncreaseRegulatedCur

HIGHPERFORMANCEFLEXIBLE1VALVE

文件：544.65 Kbytes Page：2 Pages

60WIEEE802.3btPDModule

文件：689.45 Kbytes Page：22 Pages