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N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,62A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=16mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,65A,RDS(ON)=7.8mΩ(typ)@VGS=10V. RDS(ON)=10mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,57A,RDS(ON)=9mΩ(typ)@VGS=10V. RDS(ON)=16mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,62A,RDS(ON)=9mΩ@VGS=10V. RDS(ON)=16mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,65A,RDS(ON)=7.8mΩ(typ)@VGS=10V. RDS(ON)=10mΩ(typ)@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET
更新时间:2024-6-4 13:56:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VB
T0-263
68900
原包原标签100%进口原装常备现货!
CET
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
VBsemi
2214+
TO263
5654
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
VBsemi
2023+
TO263
700000
柒号芯城跟原厂的距离只有0.07公分
CET
23+
TO263
8000
全新原装现货,欢迎来电咨询
23+
N/A
88000
一级代理放心采购
VB
2019
TO-263
55000
绝对原装正品假一罚十!
VBsemi
23+
TO263
10065
原装正品,有挂有货,假一赔十
VBsemi
2020+
T0-263
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
CET/華瑞
21+ROHS
TO-263
79999
原厂授权一级代理,专业海外优势订货,价格优势、品种

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