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位置：首页 > IC中文资料第4228页 > 71V3556S

71V3556S价格

参考价格：￥24.4487

型号：71V3556S166PFG 品牌：Integrated Device Techno 备注：这里有71V3556S多少钱，2024年最近7天走势，今日出价，今日竞价，71V3556S批发/采购报价，71V3556S行情走势销售排行榜，71V3556S报价。
型号 功能描述 生产厂家&企业 LOGO 操作
71V3556S

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S100PFG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S100PFG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S100PFGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S100PFGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S133PFG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S133PFG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S133PFGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S133PFGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S166PFG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S166PFG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S166PFGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556S166PFGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BGG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BGG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BGGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BGGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BQ

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BQ8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BQG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BQG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BQGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BQGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BQI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA100BQI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BGG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BGG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BGGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BGGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BQ

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BQ8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BQG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BQG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BQGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BQGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BQI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA133BQI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA150BG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA150BG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA150BGG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA150BGG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA150BGGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA150BGGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA150BQ

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA150BQ8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA166BG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA166BG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA166BGG

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA166BGG8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA166BGGI

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
71V3556SA166BGGI8

128Kx36,256Kx183.3VSynchronousZBTSRAMs3.3VI/O,BurstCounterPipelinedOutputs

Features ◆128Kx36,256Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz(x36) (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆Pos

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V3556S产品属性

  • 类型

    描述

  • 型号

    71V3556S

  • 功能描述

    静态随机存取存储器 128Kx36 SYNC 3.3V ZBT PIPELINED 静态随机存取存储器

  • RoHS

    否

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

71V3556S供应商更多...

更新时间：2024-4-28 13:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市智创诚芯电子科技有限公司
71V3556SA133BQG
IDT
22+
BGA
25000
原装现货,价格优惠,假一罚十
询价
标准国际(香港)有限公司
71V3556S133PFG
71V3556S133PFG
950
950
询价
深圳市艾宇特电子科技有限公司
71V3556S200PF
IDT
2046+
9852
只做原装正品现货!或订货假一赔十!
询价
深圳市高捷芯城科技有限公司
71V3556SA166BQGI
RENESAS(瑞萨)/IDT
23+
CABGA165(13x15)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
71V3556S166PFG
IDT
23+
NA/
3285
原装现货,当天可交货,原型号开票
询价
深圳市维尔达电子有限公司
71V3556S100PFI
IDT
2216+
TQFP
4726
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
深圳市环球伟业电子有限公司
71V3556S200PF8
IDT/Integrated Device Technolo
21+
TQFP100
1000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市斌腾达科技有限公司
71V3556SA166BGGI
IDT, Integrated Device Technol
21+
119-BGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
深圳市航宇科工半导体有限公司
71V3556S166PFGI
IDT
23+
NA
5556
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
深圳兆威电子有限公司
71V3556S133PFG
IDT
23+
QFP100
66
原装环保房间现货假一赔十
询价

71V3556S芯片相关品牌

  • ANAREN
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  • Cypress
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  • WALSIN
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DdatasheetPDF页码索引

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