71V124价格

参考价格:¥8.9351

型号:71V124SA10PHG 品牌:IDT 备注:这里有71V124多少钱,2024年最近7天走势,今日出价,今日竞价,71V124批发/采购报价,71V124行情走势销售排行榜,71V124报价。
型号 功能描述 生产厂家&企业 LOGO 操作

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPowerandGroundPinout

文件:68.86 Kbytes Page:8 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

封装/外壳:32-SOIC(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 32TSOP II 集成电路(IC) 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:32-SOIC(0.400",10.16mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 32TSOP II 集成电路(IC) 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)RevolutionaryPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

SupportstheATmega2560,ATmega1280andATmega640

文件:704.79 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Atmel

STK503UserGuide

文件:704.79 Kbytes Page:17 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

71V124产品属性

  • 类型

    描述

  • 型号

    71V124

  • 制造商

    Integrated Device Technology Inc

更新时间:2024-6-2 18:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
23+
SOJ32
6000
诚信服务,绝对原装原盘
RENESAS/瑞萨
23+
32-BSOJ
90000
只做原厂渠道价格优势可提供技术支持
IDT
2020+
TSOP
16800
绝对原装进口现货,假一赔十,价格优势!?
IDT
23+
SOP32
4500
全新原装、诚信经营、公司现货销售
IDT
04+
SOJ-7.2-32P
800
IDT,
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
IDT
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
IDT
20
全新原装!优势库存热卖中!
IDT-集成器
24+25+/26+27+
SOP-32
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IDT
24+
TSOP
9000
只做原装正品 有挂有货 假一赔十

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