型号 功能描述 生产厂家&企业 LOGO 操作
70V9279

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32/16Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:7.5/9ns(max.) –Industrial:7.5ns(max.) ◆Low-poweroperation –IDT70V9279/69L Active:429mW(typ.) Standby:1.32mW(typ.) ◆Flow-throug

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:128-LQFP 包装:托盘 描述:IC SRAM 512KBIT PARALLEL 128TQFP 集成电路(IC) 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:128-LQFP 包装:托盘 描述:IC SRAM 512KBIT PARALLEL 128TQFP 集成电路(IC) 存储器

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED3.3V32Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

文件:337.78 Kbytes Page:19 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

HIGH-SPEED3.3V32Kx16SYNCHRONOUSDUAL-PORTSTATICRAM

文件:337.78 Kbytes Page:19 Pages

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT
更新时间:2024-5-22 18:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
23+
NA
2679
原装现货,实单价格可谈
RENESAS(瑞萨)/IDT
23+
TQFP128(14x20)
6000
RENESAS/瑞萨
24+
NA
860000
明嘉莱只做原装正品现货
IDT/RENESAS
22+
PKG128
24500
瑞萨全系列在售
RENESAS(瑞萨)/IDT
2021+
TQFP-128(14x20)
499
RENESAS(瑞萨)/IDT
1921+
TQFP-128(14x20)
3575
向鸿仓库现货,优势绝对的原装!
Renesas
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
RENESAS(瑞萨)
23+
128-TQFP (20.00L X 14.00W X 0.
10000
全新、原装
IDT
23+
QFP
980
全新原装,真实库存
RENESAS(瑞萨)/IDT
2117+
TQFP-128(14x20)
315000
6个/托盘一级代理专营品牌!原装正品,优势现货,长期

70V9279芯片相关品牌

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