位置：首页 > IC中文资料 > 70T659S10BC
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
70T659S10BC | HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
70T659S10BC | 封装/外壳：256-LBGA 包装：卷带（TR） 描述：IC SRAM 4.5MBIT PAR 256CABGA 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM 文件：266.34 Kbytes Page：28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 |  | | |
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：739.07 Kbytes Page：28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：739.07 Kbytes Page：28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM 文件：266.34 Kbytes Page：28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM 文件：266.34 Kbytes Page：28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：739.07 Kbytes Page：28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM 文件：266.34 Kbytes Page：28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM 文件：739.07 Kbytes Page：28 Pages | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | | | |
封装/外壳：256-LBGA 包装：托盘 描述：IC SRAM 4.5MBIT PAR 256CABGA 集成电路（IC） 存储器 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
RENESAS(瑞萨)/IDT |
23+ |
CABGA256(17x17) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
|||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
|||
一级代理 |
23+ |
N/A |
97000 |
一级代理放心采购 |
|||
IDT |
16+ |
NA |
8800 |
原装现货,货真价优 |
|||
IDT, Integrated Device Technol |
21+ |
256-CABGA(17x17) |
56200 |
一级代理/放心采购 |
|||
RENESAS(瑞萨) |
23+ |
256-CABGA (17.00L X 17.00W X 1 |
10000 |
全新、原装 |
|||
Renesas Electronics America In |
24+ |
256-LBGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
|||
RENESAS(瑞萨)/IDT |
2021+ |
CABGA-256(17x17) |
499 |
70T659S10BC芯片相关品牌
70T659S10BC规格书下载地址
70T659S10BC参数引脚图相关
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70T659S10BC数据表相关新闻
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DdatasheetPDF页码索引
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