709价格

参考价格:¥1.9392

型号:709 品牌:JKL 备注:这里有709多少钱,2024年最近7天走势,今日出价,今日竞价,709批发/采购报价,709行情走势销售排行榜,709报价。
型号 功能描述 生产厂家&企业 LOGO 操作
709

T-13/4STANDARDMIDGETGROOVE

文件:335.2 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
709

包装:散装 描述:CONBUSTION ANALYZER 测试与计量 设备 - 环境检测仪

TPITest Products International

TPI 公司TPI科技有限公司

TPI
709

包装:散装 描述:MAGIC-SLOT ELECTRICIAN'S 4'' CUT 工具 配件

KLEINKlein Tools, Inc.

凯能

KLEIN

DiscreteSinglePort10/100Base-TPDSO-G16

Features •MeetsIEEE802.3standard •Surfacemount •Transfermoldpackage •Optionalpin-outs •Industrystandardfootprint •Optimumperformance •CostEffective •RoHScompliant

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED64/32Kx8SYNCHRONOUSDUAL-PORTSTATICRAM

Features: ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Commercial:9/12/15ns(max.) –Industrial:12ns(max.) ◆Low-poweroperation –IDT709089/79S Active:950mW(typ.) Standby:5mW(typ.) –IDT709089/79L

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED128Kx8SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Industrial:9ns(max.) ◆Low-poweroperation –IDT709099L Active:1.2W(typ.) Standby:2.5mW(typ.) ◆Flow-ThroughorPipelinedoutputmodeoneitherPo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED128Kx8SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Industrial:9ns(max.) ◆Low-poweroperation –IDT709099L Active:1.2W(typ.) Standby:2.5mW(typ.) ◆Flow-ThroughorPipelinedoutputmodeoneitherPo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HIGH-SPEED128Kx8SYNCHRONOUSPIPELINEDDUAL-PORTSTATICRAM

Features ◆TrueDual-Portedmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedclocktodataaccess –Industrial:9ns(max.) ◆Low-poweroperation –IDT709099L Active:1.2W(typ.) Standby:2.5mW(typ.) ◆Flow-ThroughorPipelinedoutputmodeoneitherPo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NetworkInterfaceDevice

文件:460.44 Kbytes Page:2 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

FUSEHOLDERS/SICHERUNGSHALTER

文件:2.51242 Mbytes Page:58 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER

FUSEHOLDERS/SICHERUNGSHALTER

文件:2.51242 Mbytes Page:58 Pages

SCHURTERSchurter Inc.

硕特硕特集团

SCHURTER
替换型号 功能描述 生产厂家&企业 LOGO 操作

Operational Amplifier

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

MONOLITHIC OPERATIONAL AMPLIFIER

MotorolaMotorola, Inc

摩托罗拉

Motorola

MONOLITHIC OPERATIONAL AMPLIFIER

MotorolaMotorola, Inc

摩托罗拉

Motorola

MONOLITHIC OPERATIONAL AMPLIFIER

MotorolaMotorola, Inc

摩托罗拉

Motorola

Integrated Circuits Operational Amplifier

NTENTE Electronics, Inc

NTE

HIGH-PERFORMANCE OPERATIONAL AMPLIFIER

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

HIGH-PERFORMANCE OPERATIONAL AMPLIFIER

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

709产品属性

  • 类型

    描述

  • 型号

    709

  • 功能描述

    灯 Std Midget Groove 10V .014A .

  • RoHS

  • 制造商

    Chicago Miniature

  • 灯类型

    Incandescent

  • 灯座类型

    Wire Terminal

  • 灯大小

    T-1 3/4

  • 电压

    14 V

  • MSCP

    0.3 MSCP

  • 寿命

    40000 hr

  • 封装

    Bulk

更新时间:2024-4-29 22:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOLEX
23+
N/A
5000
全新原装假一赔十
MIDCOM
2020+
SOP16
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
MIDCOM
20+
SMD16
35830
原装优势主营型号-可开原型号增税票
PHILIPS/飞利浦
22+
ZIP-23
100000
代理渠道/只做原装/可含税
ON/安森美
2021/2022+
NA
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
AVX(京瓷)
23+
SMD
32589
免费送样,账期支持,原厂直供,没有中间商赚差价
MIDCOM
23+
NA/
3420
原装现货,当天可交货,原型号开票
MIDCOM
23+
SOP24
20000
原厂原装正品现货
MOLEX
23+
SOP20
18000
N/A
2046+
9852
只做原装正品现货!或订货假一赔十!

709芯片相关品牌

  • ACT
  • AME
  • A-POWER
  • Balluff
  • CONEC
  • FESTO
  • Kingbright
  • MCNIX
  • PASTERNACK
  • RSG
  • SUNTSU
  • XPPOWER

709数据表相关新闻