型号 功能描述 生产厂家&企业 LOGO 操作
60N321

InsulatedGateBipolarTransistorSiliconNChannelIGBT

HighPowerSwitchingApplications The4thGeneration •FRDincludedbetweenemitterandcollector •Enhancement-mode •HighspeedIGBT:tf=0.25µs(typ.)(IC=60A) FRD:trr=0.8µs(typ.)(di/dt=−20A/µs) •Lowsaturationvoltage:VCE(sat)=2.3V(typ.)(IC=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

InsulatedGateBipolarTransistorSiliconNChannelIGBT

HighPowerSwitchingApplications The4thGeneration •FRDincludedbetweenemitterandcollector •Enhancement-mode •HighspeedIGBT:tf=0.25µs(typ.)(IC=60A) FRD:trr=0.8µs(typ.)(di/dt=−20A/µs) •Lowsaturationvoltage:VCE(sat)=2.3V(typ.)(IC=

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

IGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.3V@IC=10A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·FrequencyConverters ·AirConditioning ·UPS,PFC ·MotorDrives

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
更新时间:2024-5-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
NA/
1280
优势代理渠道,原装正品,可全系列订货开增值税票
TOSHIBA
23+
TO-3P
9526
17
22+
TO-252
45000
原装现货假一赔十
ST
TO-251
608900
原包原标签100%进口原装常备现货!
ST
23+
TO-251
16900
正规渠道,只有原装!
ST/意法
23+
TO-251
10000
优势代理渠道,原装正品,可全系列订货开增值税票
ST
22+
TO-251
25000
原装现货,价格优惠,假一罚十
TOSHIBA原装专卖价格
2023+
原装
8700
原装现货
S
22+
SOT-252
25000
只做原装进口现货,专注配单
Anaren
2018+
SMD
5500
长期供应原装现货实单可谈

60N321芯片相关品牌

  • Altera
  • BILIN
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  • HY
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  • MOLEX2
  • OHMITE
  • RCD
  • spansion
  • TOKEN
  • VBSEMI

60N321数据表相关新闻